Dram Memory Design Engineer Jobs

DRAM Memory Design Engineer - Principal | MTS | SMTS — Boise, ID - Main Site. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology’s DRAM and Emerging Memory Group (DEG) is a distributed team of engineers and innovators focused on advancing next-generation memory technologies. For more than 43 years, Micron has been a leader in semiconductor innovation, delivering solutions that power applications ranging from artificial intelligence and high-performance computing to immersive digital experiences. The team is committed to innovation, integrity, sustainability, and meaningful community impact while driving the future of memory technology. As an HBM Memory Design Engineer, you will design, analyze, and optimize digital, analog, and memory circuits used in High Bandwidth Memory (HBM) products. You will collaborate with global design, verification, and product teams to develop high-performance DRAM solutions that meet manufacturability, reliability, and performance objectives. This role provides the opportunity to contribute to innovative memory technologies supporting AI, HPC, and data-centric applications. As part of Micron’s AI-Enabled workforce transformation, you will leverage AI-Assisted tools and data-driven methodologies to improve engineering productivity, accelerate design analysis, enhance decision-making, and drive innovation throughout the product development lifecycle. Responsibilities Design, analyze, and optimize memory, logic, and analog circuits for HBM products, including support for layout, validation, and tape-out activities. Perform circuit verification, parasitic modeling, and design simulations

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Staff Design Engineer is responsible for designing, simulating, and optimizing DRAM circuits while supporting the development of digital and analog circuitry used in advanced memory products. This role collaborates globally across design, verification, product engineering, test, probe, process integration, assembly, and marketing to ensure manufacturable, high‑quality, cost‑optimized solutions. The position drives innovation in future memory generations and contributes to silicon‑to‑system development in a dynamic engineering environment. Responsibilities Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution. Utilize AI-Enabled tools to assist with schematic editing, data collection and layout floorplan. Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size, including layout leadership. Conduct circuit simulations using FINESIM, HSPICE, and VERILOG; analyze power, performance, reliability, and parasitic impacts. Validate builds through reticle experiments, tape‑out revisions, and simulation‑to‑silicon correlation, identifying required schematic edits. Prepare and maintain design documentation while contributing to best‑known practices and departmental training. Collaborate with global build, verification, product engineering, test, probe, process integration, assembly, and marketing teams to ensure manufacturability and quality. <l

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron’s DRAM Design Engineering Group (DDEG) is where innovation meets excellence. We are advancing memory and storage technologies through collaborative engineering and creative problem-solving. Our team works at the forefront of semiconductor design, developing solutions that shape the future of memory products in a fast-paced, learning-focused environment. As a Design Verification Engineer, you will help develop next-generation memory technologies by verifying and optimizing digital and analog circuit designs. In this role, you will work closely with global multi-functional teams across the product lifecycle to deliver high-quality, manufacturable memory solutions that meet performance, reliability, cost, and customer requirements. Your work will directly contribute to bringing advanced memory products from concept to production. Responsibilities: Verify circuit functionality, reliability, power, and compliance with product specifications Drive verification planning, coverage closure, circuit debug, and design improvements Perform circuit modeling and simulation using industry-standard tools Support silicon validation, reticle experiments, and tape-out activities Partner with engineering, manufacturing, and product teams to deliver manufacturable designs Minimum Qualifications: Bachelor’s degree in Electrical Engineering or a related field 4&#43; years of semiconductor design, verifi

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Design Technology Co-Optimization (DTCO) team works at the intersection of process technology, standard cell architecture, and design implementation to optimize power, performance, and area (PPA) for advanced memory products. The team collaborates closely with standard cell library, RTL, and physical design engineers to evaluate design tradeoffs and develop methodologies that improve silicon outcomes. As a DTCO Intern, you will gain hands-on experience assessing and optimizing PPA at the standard cell and logic block level. You will use industry-standard place-and-route tools and AI-enabled automation techniques to implement, benchmark, and optimize logic blocks while developing practical skills in physical design, timing closure, and design analysis. Responsibilities Implement standard cell logic blocks using industry-standard physical design tools, including floorplanning, placement, clock tree synthesis (CTS), routing, and optimization activities focused on PPA assessment. Analyze and benchmark power, performance, and area across standard cell libraries and logic block configurations, identifying opportunities for improvement. Perform static timing analysis (STA), investigate setup and hold timing violations, and support timing closure activities. Execute physical verification checks, including DRC, LVS, and IR-drop analysis, and assist with resolving design issues. Leverage Generative AI, AI Assistants, and Agentic AI solutions to automate data collection, reporting, comparison, and w

NVIDIA is now looking for a Senior Memory System Engineer to join our ASIC Memory Subsystem team! As a Senior Systems Engineer at NVIDIA, you'll join a group of hardworking engineers to develop and architect innovative Memory Solution for Tegra SoCs. In this position, you'll make a real impact in a multifaceted, technology-focused company. You will work with memory controller/PHY and Platform / System architect, Firmware, SI/PI, Memory suppliers to design and architect cutting edge, high speed and lower power memory technology for NVIDIA CPUs and SOCs. What You Will Be Doing: Analyze future DDR/LPDDR/HBM technologies to determine optimum performance, power, function and RAS in memory for Next generation SOC and Systems. Collaborate with ASIC Architects, Designers, Software and Firmware SW/FW teams to drive memory technology and associated requirements for memory controllers. Define Memory module, Package, and PCB layouts appropriate to the system workloads Debug and bring up memory evaluation / validation and failure issues on memory technology. Collaborate with DRAM suppliers and industry partners on to develop memory and memory related component technology. What We need to see: Bachelor's degree or master’s degree in Electrical Engineering, Computer Engineering (CE), or a related field (or equivalent experience) 10 years of proven track record in DRAM design, module design, or memory sub system design. Deep understanding and strong fundamental of memory design, features, ECC algorithm, SI and PI (Training algorithm) in DDR, LPDDR, and HBM. Strong understanding of memory sub system level interaction with Cache, Memory controller and PHY. Experience in the design, bring-up and validation for memory failure analysis Experience with Python, C/C

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Sr Design Engineer, you will work on design, simulation, and validation of next ‑ generation High ‑ Bandwidth Memory (HBM) architectures and circuit blocks. HBM requires advanced DRAM design knowledge combined with deep understanding of 3D stacked architecture, TSV signaling, wide I/O interfaces, PHY timing, power integrity, and system co ‑ optimization with GPUs/accelerators. This role sits at the intersection of DRAM design and high ‑ performance computing, enabling future AI/ML, HPC, and advanced graphics products. In this position, you will collaborate with Micron’s various design and verification teams all over the world and support the efforts of groups such as Product Engineering, Test, Probe, Process Integration, Assembly and Marketing to proactively design products that optimize all manufacturing functions and assure the best cost, quality, reliability, time-to-market, and customer satisfaction.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Principal Engineer at Micron’s HBM New Product Validation team in Boise, ID you will be a senior technical guide responsible for validation strategy and readiness for future-generation High Bandwidth Memory (HBM) products. You will apply deep expertise in complex RAM and high-bandwidth memory architecture and building to establish architecture validation strategies. You will impact decisions that improve validation observability and debug efficiency . You will lead investigations of complex architecture, building , and silicon issues from pre-silicon simulation through post-silicon characterization. You will partner across Design Engineering, Design Validation, Product Engineering, Systems teams, and will develop and promote AI-enabled validation methodologies that improve efficiency, quality, and scalability. Responsibilities: Define architecture-aware validation strategies and coverage direction for future-generation HBM products. Drive validation readiness for next-generation products by preparing strategies, test environments, and execution plans before first silicon, reducing risk, accelerating issue resolution, and preventing late-stage surprises. Evaluate new DRAM/HBM architectural features and define validation requirements and testability needs before DBR. <span style="color:#

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As an Intern Product Yield Enhancement (PYE) Engineer at Micron Technology Inc., you will assist in taking next generation DRAM devices from design to mass production! PYE Engineers are crucial partners between Research and Development, Manufacturing, Product Engineering and Global Quality teams. Our goal is to offer hands-on and substantial engineering projects that allow interns to gain valuable experience with memory systems and the product life cycle while adding impact to Micron’s business. Our intern programs help prepare engineers for future roles and offer an extraordinary experience that supplements your academic experience! The PYE Engineering role is critical to Micron as it serves the company's charter to be the most cost-effective producer of DRAM memory while delivering the quality and reliability that customers expect from the Micron brand. This position is for a 3-month internship. Responsibilities: Your job duties will include detailed DRAM electrical and physical failure analysis. Identify defects introduced by the semiconductor fabrication process. You will data mine using statistical analysis, AI assisted engineering tools, and automation workflows. Find the root cause of failure mechanisms, communicating results with Management, Product, Process and Test Engineering teams. Complete 3-month internship. Minimum Qualifications: Must be pursuing a minimum of a bachelor’s degree in Electrical Engineering, Computer Engineering,

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Are you excited to drive Quality initiatives on new product from Design through Qualification? Collaborating across multi-functional teams to deep dive and actively drive resolution and ensure customer satisfaction in a fast paced and dynamic environment? Innovate and develop Quality and Reliability Strategies and enhancements? All while being part of a fun and supportive team? As a Development Quality Engineer in DEMQRA DQA Design Team at Micron Technology, Inc., your responsibilities will include the following: Work with key development partners in Design, Product Engineering, Technology Development, Quality Assurance and Manufacturing to identify and mitigate potential quality and reliability issues during the Design and pre-qualification phase of new product Identify Design specific risks for new High Performance Memory product and collaborate with the Design, PE, TD and QA teams to ensure correct verification, validation and detection specs are in place to ensure visibility to the status and success of mitigation efforts Drive deep-dive problem solving and mitigation/resolution alignment across the portfolio for DRAM related quality and reliability issues Act as the Subject Matter Expert on Design related quality and Live Die reliability issues and advise Global Quality leadership on risk and mitigation strategies Partner with Design, PE, and QA to align and recommend changes to verification and/or validation flows to ensure they are optimized to meet Micron’s QR nee

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are transforming how the world uses information to enrich life for all. Within our DRAM organization, we develop next-generation memory technologies in an industry-leading 300mm R&D environment, bringing together expertise across process development, design, modeling, characterization, reliability, and manufacturing. Our team works collaboratively to advance memory scaling while improving performance and manufacturability. As a Process Integration Engineer, you will help enable state-of-the-art DRAM technologies and solve complex integration, device, yield, and circuit challenges. You will work closely with cross-functional engineering teams to optimize process flows, improve yield and margin, and translate technical data into solutions that enable future generations of memory technology. Responsibilities: Lead technology integration activities to enable manufacturability of advanced DRAM technologies Partner with process development, product engineering, design, yield, mask, and probe teams to resolve yield, performance, reliability, and margin challenges Design and implement R&D fab experiments and optimize process flows to meet product and technology requirements Analyze inline, defect, parametric

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in artificial intelligence possible! We do it all while committing to integrity, sustainability, and giving back to our communities, because doing so can fuel the very innovation we are pursuing. As a process integration engineer in the DRAM organization, you will be part of a team of world-class engineers who are working in an industry leading 300mm R&D facility on technology which enables future memory scaling. You will focus on the performance and manufacturability of Micron’s cutting-edge next-generation memories. Areas of concentration will include integration and circuit issues specific to DRAM technology. In addition to a broad basis of process integration knowledge, this position will require a strong background in semiconductor device physics. Role interacts significantly with the process development, simulation, modeling, characterization, and reliability groups. Responsibilities include, but not limited to: Lead technology integration activities in enabling manufacturability of state-of-the-art DRAM technology Engage with numerous cross-functional teams including process development, product engineering, design, yield improvement, advanced mask and probe to arrive at solutions to

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron has an opening for a Photolithography Engineer (Level 2 or 3) at our Boise, Idaho facility. This position is part of Micron’s Technology Development organization, where advanced ideas become manufacturable technologies. Our team works at the leading edge of memory innovation, partnering across design, integration, manufacturing, and equipment suppliers to enable the next generation of semiconductor devices. This is where curiosity, experimentation, and impact come together. As a Photolithography Engineer, you will play a key role in developing and integrating lithography processes that directly shape future memory technologies. You will work hands-on with tools, materials, layouts, and data, while leveraging Artificial Intelligence and other software, collaborating with global partners to move innovations from R&D into high-volume manufacturing. This role offers broad technical exposure and the opportunity to influence device performance, yield, and cost at scale. Responsibilities: Develop and integrate photolithography unit processes for advanced memory technologies Perform material evaluations, reticle, and layout development, OPC, overlay optimization, and process window analysis Drive yield improvement, failure analysis, and device performance optimization Partner with equipment vendors to evaluate tools and improve process capability Document processes, communicate results, and support technology transfer to manufacturing Leverage Artifi

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we are transforming how the world uses information to enrich life through innovative memory and storage solutions. The DRAM Thin Films Process Engineering team develops advanced materials and deposition processes that enable future memory scaling, improved device performance, and next-generation semiconductor technology. Our team works at the forefront of process development to support DRAM technologies that power artificial intelligence, cloud computing, and data-intensive applications. As a DRAM Thin Films Process Engineering Intern, you will work alongside experienced engineers on a high-impact summer project focused on semiconductor process development and optimization. This role provides hands-on experience with experimental design, process characterization, data analysis, and multi-functional collaboration. You will contribute to real engineering challenges and present your results to technical and leadership audiences at the conclusion of the internship. Responsibilities Research and develop innovative solutions that support next-generation memory technology and thin film process advancement. Develop, complete, and analyze experiments to improve thin films process performance, manufacturability, and product quality. Apply statistical analysis, data science techniques, and AI-enabled tools to identify process trends, optimize performance, and accelerate engineering decision-making. Partner with process, equipment, and integration engineering teams to solve complex technic

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Product Engineer in Node Development group, you will be part of a forward-thinking team of engineers that solves complex problems to develop industry leading DRAM! You will engage on new technology at design start and be part of a team responsible for delivering technology to enable the full product portfolio, initial device qualification and production ramp. This will be accomplished through innovation and by cross-functional engagement with partner groups; Design, Test, Technology Development, Marketing, Manufacturing and Quality Assurance departments to co-optimize product and process. While you may not exhibit all of the characteristics/skills listed below today, we are highly interested in a teammate who is motivated to grow in technical breadth and depth. Suppose you are open to learning while being a valued member of a team of world-class engineers. In that case, we are determined to help build upon your existing foundation, while focusing on your individual and collaborative skills in this exciting and outstanding opportunity. Responsibilities Include: Enable new process node startup, qualification, yield, and ramp Collaborate with internal engineering groups; Design, Technology Development, Design for Test, and Quality teams to understand yield issues and priorities. Provide direction to development teams using thorough knowledge for process integration Develop and key metrics for feedback on a new technology Support design verification and validation using CAD tools and simulation