Circuit / Memory Design Engineer | HBM - TPG

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we are transforming how the world uses information to enrich life. The High Bandwidth Memory (HBM) Design team develops industry-leading memory solutions that enable advances in Artificial Intelligence, high-performance computing, graphics, and data-center applications. Our engineers collaborate across global teams to deliver innovative memory architectures and semiconductor technologies that power next-generation computing systems. As an HBM Design Engineer Intern, you will work alongside experienced memory engineers and gain hands-on experience in semiconductor design, simulation, verification, and analysis. This internship provides exposure to industry-standard design methodologies, EDA tools, and cross-functional collaboration throughout the product development lifecycle. You will also have opportunities to apply AI-Assisted and AI-Enabled workflows to improve engineering productivity, debug efficiency, and design quality. Responsibilities Assist with the design, simulation, analysis, and verification of HBM memory and logic circuits using industry-standard semiconductor design tools. Support RTL development, circuit implementation, timing analysis, power analysis, and functional validation activities. Develop scripts, automation solutions, and AI-Assisted workflows to improve design productivity, debug efficiency, and design-flow quality. Collaborate with Design, Verification, Physical Design, CAD, and Product Engineering teams on technical reviews, debug activities, and project deliv

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Staff Design Engineer is responsible for designing, simulating, and optimizing DRAM circuits while supporting the development of digital and analog circuitry used in advanced memory products. This role collaborates globally across design, verification, product engineering, test, probe, process integration, assembly, and marketing to ensure manufacturable, high‑quality, cost‑optimized solutions. The position drives innovation in future memory generations and contributes to silicon‑to‑system development in a dynamic engineering environment. Responsibilities Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution. Utilize AI-Enabled tools to assist with schematic editing, data collection and layout floorplan. Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size, including layout leadership. Conduct circuit simulations using FINESIM, HSPICE, and VERILOG; analyze power, performance, reliability, and parasitic impacts. Validate builds through reticle experiments, tape‑out revisions, and simulation‑to‑silicon correlation, identifying required schematic edits. Prepare and maintain design documentation while contributing to best‑known practices and departmental training. Collaborate with global build, verification, product engineering, test, probe, process integration, assembly, and marketing teams to ensure manufacturability and quality. <l

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we are transforming how the world uses information to enrich life. The High Bandwidth Memory (HBM) Design team develops industry-leading memory solutions that enable advances in Artificial Intelligence, high-performance computing, graphics, and data-center applications. Our engineers collaborate across global teams to deliver innovative memory architectures and semiconductor technologies that power next-generation computing systems. As an HBM Design Engineer Intern, you will work alongside experienced memory engineers and gain hands-on experience in semiconductor design, simulation, verification, and analysis. This internship provides exposure to industry-standard design methodologies, EDA tools, and cross-functional collaboration throughout the product development lifecycle. You will also have opportunities to apply AI-Assisted and AI-Enabled workflows to improve engineering productivity, debug efficiency, and design quality. Responsibilities Assist with the design, simulation, analysis, and verification of HBM memory and logic circuits using industry-standard semiconductor design tools. Support RTL development, circuit implementation, timing analysis, power analysis, and functional validation activities. Develop scripts, automation solutions, and AI-Assisted workflows to improve design productivity, debug efficiency, and design-flow quality. Collaborate with Design, Verification, Physical Design, CAD, and Product Engineering teams on technical reviews, debug activities, and project deliv

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology’s DRAM and Emerging Memory Group (DEG) is a distributed team of engineers and innovators focused on advancing next-generation memory technologies. For more than 43 years, Micron has been a leader in semiconductor innovation, delivering solutions that power applications ranging from artificial intelligence and high-performance computing to immersive digital experiences. The team is committed to innovation, integrity, sustainability, and meaningful community impact while driving the future of memory technology. As an HBM Memory Design Engineer, you will design, analyze, and optimize digital, analog, and memory circuits used in High Bandwidth Memory (HBM) products. You will collaborate with global design, verification, and product teams to develop high-performance DRAM solutions that meet manufacturability, reliability, and performance objectives. This role provides the opportunity to contribute to innovative memory technologies supporting AI, HPC, and data-centric applications. As part of Micron’s AI-Enabled workforce transformation, you will leverage AI-Assisted tools and data-driven methodologies to improve engineering productivity, accelerate design analysis, enhance decision-making, and drive innovation throughout the product development lifecycle. Responsibilities Design, analyze, and optimize memory, logic, and analog circuits for HBM products, including support for layout, validation, and tape-out activities. Perform circuit verification, parasitic modeling, and design simulations

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are seeking a Senior Analog Design Engineer to join our High Bandwidth Memory (HBM) team. This role is responsible for the architecture, design, simulation, and silicon bring ‑ up of high ‑ performance analog and mixed ‑ signal circuits used in HBM PHYs and supporting infrastructure. The ideal candidate has deep expertise in high ‑ speed I/O, clocking, power management, and advanced ‑ node analog design, and has successfully delivered silicon to production. Responsibilities will include, but are not limited to: Design and own critical HBM analog circuits, including: High ‑ speed transmitters and receivers Clock generation and distribution (PLLs, DLLs, CDRs) SerDes ‑ related analog blocks Biasing, reference, and calibration circuits </

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Sr Design Engineer, you will work on design, simulation, and validation of next ‑ generation High ‑ Bandwidth Memory (HBM) architectures and circuit blocks. HBM requires advanced DRAM design knowledge combined with deep understanding of 3D stacked architecture, TSV signaling, wide I/O interfaces, PHY timing, power integrity, and system co ‑ optimization with GPUs/accelerators. This role sits at the intersection of DRAM design and high ‑ performance computing, enabling future AI/ML, HPC, and advanced graphics products. In this position, you will collaborate with Micron’s various design and verification teams all over the world and support the efforts of groups such as Product Engineering, Test, Probe, Process Integration, Assembly and Marketing to proactively design products that optimize all manufacturing functions and assure the best cost, quality, reliability, time-to-market, and customer satisfaction.