Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we are transforming how the world uses information to enrich life. The High Bandwidth Memory (HBM) Design team develops industry-leading memory solutions that enable advances in Artificial Intelligence, high-performance computing, graphics, and data-center applications. Our engineers collaborate across global teams to deliver innovative memory architectures and semiconductor technologies that power next-generation computing systems. As an HBM Design Engineer Intern, you will work alongside experienced memory engineers and gain hands-on experience in semiconductor design, simulation, verification, and analysis. This internship provides exposure to industry-standard design methodologies, EDA tools, and cross-functional collaboration throughout the product development lifecycle. You will also have opportunities to apply AI-Assisted and AI-Enabled workflows to improve engineering productivity, debug efficiency, and design quality. Responsibilities Assist with the design, simulation, analysis, and verification of HBM memory and logic circuits using industry-standard semiconductor design tools. Support RTL development, circuit implementation, timing analysis, power analysis, and functional validation activities. Develop scripts, automation solutions, and AI-Assisted workflows to improve design productivity, debug efficiency, and design-flow quality. Collaborate with Design, Verification, Physical Design, CAD, and Product Engineering teams on technical reviews, debug activities, and project deliv
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HBM Engineering Technician β Taichung - MTB, Taiwan. Apply via Workday.
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Micron Technology
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