Principal Analog Design Engineer, HBM

We’re building a world of health around every individual — shaping a more connected, convenient and compassionate health experience. At CVS Health®, you’ll be surrounded by passionate colleagues who care deeply, innovate with purpose, hold ourselves accountable and prioritize safety and quality in everything we do. Join us and be part of something bigger – helping to simplify health care one person, one family and one community at a time. Role Summary The Principal Architect, Solution Engineering and Automation will be responsible for the business solution designs that include working at the business unit level developing the most advanced end-to-end solution architecture for highly complex and significant initiatives in partnership with key business and IT stakeholders. In this high-impact role, you will build a technology incubation function, identifying, developing, and launching innovative solutions that address critical business challenges, improve patient outcomes, and drive significant value for CVS Health. You will be at the forefront of emerging technologies, working closely with business leaders, technology teams, and external partners to shape the future of pharmacy benefits. What you will do: Provide technology leadership, solution oversight, design reviews and guidance to ensure that the solution adheres to Solution Architecture Guiding Principles and standards while maximizing reuse of technology assets In depth experience in performing Buy vs Build analysis based on the qualitative and quantitative analysis across the available options to provide a final recommendation based on the rationale Actively lead and participate in the Architecture community to drive modernization opportunities for the advancement of PBM technology while keeping in mind the com

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are seeking a Principal Analog Design Engineer to lead the design, integration, and delivery of advanced analog and mixed-signal IPs for High Bandwidth Memory (HBM) products. This role is critical in developing and integrating high-performance analog subsystems within the HBM logic die, enabling industry-leading bandwidth, power efficiency, and reliability. As a principal engineer, you will provide deep technical leadership across analog design, IP integration, system alignment, and silicon execution, driving end-to-end success of HBM solutions. Responsibilities will include, but are not limited to: Lead the d esign and own critical HBM analog circuits, including: High ‑ speed transmitters and receivers Clock generation and distribution (PLLs, DLLs, CDRs) SerDes ‑ related analog blocks Biasing, reference, and calibration circuits

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Principal Design Engineer, you will build the future of memory by architecting and delivering high‑performance DRAM circuit compositions for advanced technology nodes. In this highly visible technical leadership role, you’ll develop innovation across building, layout, verification, and silicon validation. You will collaborate closely with multi-functional teams to deliver scalable, manufacturable solutions for next-generation memory products. Your work will directly influence performance, power, reliability, and time‑to‑market for Micron’s groundbreaking memory technologies. Responsibilities Design and optimize DRAM circuits spanning digital, analog, and memory core subsystems to meet aggressive power, performance, and reliability targets Develop and refine floorplans, routing strategies, power delivery networks, sense margins, timings, and die‑size tradeoffs Perform advanced circuit simulations using FINESIM, HSPICE, and VERILOG, analyzing speed, power, noise, and long‑term reliability Model parasitics, verify power and signal integrity, and support validation, reticle experiments, and tape‑out revisions Drive simulation‑to‑silicon correlation, identify gaps, and recommend schematic and layout improvements Lead technical reviews, documentation, and best‑practice standardization across design and layout teams Coordinate and manage layout and build resources, tracking breakthroughs and resolving critical path issues S

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 43 years, Micron Technology has delivered world‑leading memory and semiconductor solutions. As an HBM Memory Design Engineer on the HBM Architecture Team, you will design, simulate, optimize, and floorplan advanced DRAM circuits for next‑generation High Bandwidth Memory products. You will work across digital, analog, and mixed-signal domains to ensure functional correctness, performance, and power efficiency. Your role includes collaborating with globally distributed teams developing modern HBM solutions for AI and ML applications. Responsibilities • Design, simulate, and optimize DRAM memory arrays, data paths, ECC, command/control logic, and high‑speed interface circuits • Evaluate block‑level and full‑chip functionality and propose solutions to ensure functional correctness • Analyze timing, area, power, and complexity trade‑offs in high‑speed DRAM and mixed‑signal designs • Perform pathfinding and feasibility studies for new architectures and future HBM products • Contribute to the design, layout, and optimization of memory, logic, and analog circuits • Support large‑scale verification, debug, and silicon validation activities • Collaborate across multi-functional teams involved in TSV‑based 3D stacking and vertical integration • Participate in design reviews and drive continuous improvement of design methodologies Minimum Qualifications • BSEE with 7+ years or MSEE with 5+ years of relevant engineering experience • Strong knowledge of

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As an HBM Memory Design Engineer in Micron’s HBM Architecture Team, you will design, simulate, analyze, and floorplan digital and analog DRAM circuits used in advanced HBM technology. You will evaluate block-level and full-chip functionality, perform architectural pathfinding, and contribute to the development of next‑generation high‑bandwidth DRAM solutions. This role works across diverse engineering teams to deliver functionally accurate, low‑power, and high‑performance HBM products by bringing to bear 3D stacking and TSV-based integration. Responsibilities • Design, simulate, and optimize digital and analog DRAM circuits including data path, ECC, command/control, and high‑speed timing structures • Evaluate full‑chip and block‑level functionality and propose solutions to achieve correct circuit and system behavior • Perform timing, area, power, and complexity analysis for high‑speed DRAM and mixed‑signal circuits • Conduct pathfinding studies and feasibility analyses for future HBM architectures • Contribute to the development, layout, and optimization of memory, logic, and analog circuits • Analyze circuit behavior under varying PVT and parasitic conditions to ensure robust operation • Collaborate with multi-functional teams across build, verification, product engineering, process, and packaging • Support design reviews, documentation, and continuous improvement of design methodologies Minimum Qualifications • BSEE with 7+ years, or MSEE with 5+ years of releva

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 43 years, Micron Technology, Inc. has advanced the world’s most innovative memory and semiconductor technologies. As an HBM Memory Design Engineer within the HBM Architecture Team, you will design, simulate, and optimize digital and analog DRAM circuits for next‑generation high‑bandwidth memory products. You will evaluate block‑level and full‑chip functionality, solve complex challenges in building, and collaborate with a distributed team to deliver highly reliable, industry‑leading HBM solutions. This role provides the opportunity to contribute to groundbreaking DRAM design, TSV‑based 3D integration, and high‑speed mixed‑signal architectures supporting Machine Learning and AI applications. Responsibilities Design and analyze digital, analog, and mixed‑signal circuits for HBM DRAM products. Perform schematic entry, simulation, and optimization of DRAM blocks including data path, ECC, command control, and clocking circuits. Evaluate full‑chip and block‑level functionality and deliver solutions ensuring functional accuracy. Conduct pathfinding and feasibility studies for next‑generation HBM architectures. Optimize circuit timing, area, power, and complexity across high‑speed DRAM designs. Support design floor planning, layout reviews, and cross‑domain integration of memory, logic, and analog circuits. Collaborate with global engineering teams to drive innovation and support vertical integration across design