DRAM Power Engineer — Boise, ID - Main Site. Apply via Workday.
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Design Methodology – Principal DRAM Power Integrity Engineer — Hyderabad - Phoenix Aquila, India. Apply via Workday.
Design Methodology – Senior / Staff DRAM Power Integrity Engineer — Hyderabad - Phoenix Aquila, India. Apply via Workday.
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we are transforming how the world uses information to enrich life through innovative memory and storage solutions. The DRAM Thin Films Process Engineering team develops advanced materials and deposition processes that enable future memory scaling, improved device performance, and next-generation semiconductor technology. Our team works at the forefront of process development to support DRAM technologies that power artificial intelligence, cloud computing, and data-intensive applications. As a DRAM Thin Films Process Engineering Intern, you will work alongside experienced engineers on a high-impact summer project focused on semiconductor process development and optimization. This role provides hands-on experience with experimental design, process characterization, data analysis, and multi-functional collaboration. You will contribute to real engineering challenges and present your results to technical and leadership audiences at the conclusion of the internship. Responsibilities Research and develop innovative solutions that support next-generation memory technology and thin film process advancement. Develop, complete, and analyze experiments to improve thin films process performance, manufacturability, and product quality. Apply statistical analysis, data science techniques, and AI-enabled tools to identify process trends, optimize performance, and accelerate engineering decision-making. Partner with process, equipment, and integration engineering teams to solve complex technic
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron’s DRAM Design Engineering Group (DDEG) is where innovation meets excellence. We are advancing memory and storage technologies through collaborative engineering and creative problem-solving. Our team works at the forefront of semiconductor design, developing solutions that shape the future of memory products in a fast-paced, learning-focused environment. As a Design Verification Engineer, you will help develop next-generation memory technologies by verifying and optimizing digital and analog circuit designs. In this role, you will work closely with global multi-functional teams across the product lifecycle to deliver high-quality, manufacturable memory solutions that meet performance, reliability, cost, and customer requirements. Your work will directly contribute to bringing advanced memory products from concept to production. Responsibilities: Verify circuit functionality, reliability, power, and compliance with product specifications Drive verification planning, coverage closure, circuit debug, and design improvements Perform circuit modeling and simulation using industry-standard tools Support silicon validation, reticle experiments, and tape-out activities Partner with engineering, manufacturing, and product teams to deliver manufacturable designs Minimum Qualifications: Bachelor’s degree in Electrical Engineering or a related field 4+ years of semiconductor design, verifi
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Design Technology Co-Optimization (DTCO) team works at the intersection of process technology, standard cell architecture, and design implementation to optimize power, performance, and area (PPA) for advanced memory products. The team collaborates closely with standard cell library, RTL, and physical design engineers to evaluate design tradeoffs and develop methodologies that improve silicon outcomes. As a DTCO Intern, you will gain hands-on experience assessing and optimizing PPA at the standard cell and logic block level. You will use industry-standard place-and-route tools and AI-enabled automation techniques to implement, benchmark, and optimize logic blocks while developing practical skills in physical design, timing closure, and design analysis. Responsibilities Implement standard cell logic blocks using industry-standard physical design tools, including floorplanning, placement, clock tree synthesis (CTS), routing, and optimization activities focused on PPA assessment. Analyze and benchmark power, performance, and area across standard cell libraries and logic block configurations, identifying opportunities for improvement. Perform static timing analysis (STA), investigate setup and hold timing violations, and support timing closure activities. Execute physical verification checks, including DRC, LVS, and IR-drop analysis, and assist with resolving design issues. Leverage Generative AI, AI Assistants, and Agentic AI solutions to automate data collection, reporting, comparison, and w
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Staff Design Engineer is responsible for designing, simulating, and optimizing DRAM circuits while supporting the development of digital and analog circuitry used in advanced memory products. This role collaborates globally across design, verification, product engineering, test, probe, process integration, assembly, and marketing to ensure manufacturable, high‑quality, cost‑optimized solutions. The position drives innovation in future memory generations and contributes to silicon‑to‑system development in a dynamic engineering environment. Responsibilities Design digital, analog, and memory core circuits using CMOS logic and transistors, implementing device specifications from concept to solution. Utilize AI-Enabled tools to assist with schematic editing, data collection and layout floorplan. Create optimized floorplans for circuit placement, routing, power delivery, sense margins, array timing, and die size, including layout leadership. Conduct circuit simulations using FINESIM, HSPICE, and VERILOG; analyze power, performance, reliability, and parasitic impacts. Validate builds through reticle experiments, tape‑out revisions, and simulation‑to‑silicon correlation, identifying required schematic edits. Prepare and maintain design documentation while contributing to best‑known practices and departmental training. Collaborate with global build, verification, product engineering, test, probe, process integration, assembly, and marketing teams to ensure manufacturability and quality. <l
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology’s DRAM and Emerging Memory Group (DEG) is a distributed team of engineers and innovators focused on advancing next-generation memory technologies. For more than 43 years, Micron has been a leader in semiconductor innovation, delivering solutions that power applications ranging from artificial intelligence and high-performance computing to immersive digital experiences. The team is committed to innovation, integrity, sustainability, and meaningful community impact while driving the future of memory technology. As an HBM Memory Design Engineer, you will design, analyze, and optimize digital, analog, and memory circuits used in High Bandwidth Memory (HBM) products. You will collaborate with global design, verification, and product teams to develop high-performance DRAM solutions that meet manufacturability, reliability, and performance objectives. This role provides the opportunity to contribute to innovative memory technologies supporting AI, HPC, and data-centric applications. As part of Micron’s AI-Enabled workforce transformation, you will leverage AI-Assisted tools and data-driven methodologies to improve engineering productivity, accelerate design analysis, enhance decision-making, and drive innovation throughout the product development lifecycle. Responsibilities Design, analyze, and optimize memory, logic, and analog circuits for HBM products, including support for layout, validation, and tape-out activities. Perform circuit verification, parasitic modeling, and design simulations
NVIDIA is now looking for a Senior Memory System Engineer to join our ASIC Memory Subsystem team! As a Senior Systems Engineer at NVIDIA, you'll join a group of hardworking engineers to develop and architect innovative Memory Solution for Tegra SoCs. In this position, you'll make a real impact in a multifaceted, technology-focused company. You will work with memory controller/PHY and Platform / System architect, Firmware, SI/PI, Memory suppliers to design and architect cutting edge, high speed and lower power memory technology for NVIDIA CPUs and SOCs. What You Will Be Doing: Analyze future DDR/LPDDR/HBM technologies to determine optimum performance, power, function and RAS in memory for Next generation SOC and Systems. Collaborate with ASIC Architects, Designers, Software and Firmware SW/FW teams to drive memory technology and associated requirements for memory controllers. Define Memory module, Package, and PCB layouts appropriate to the system workloads Debug and bring up memory evaluation / validation and failure issues on memory technology. Collaborate with DRAM suppliers and industry partners on to develop memory and memory related component technology. What We need to see: Bachelor's degree or master’s degree in Electrical Engineering, Computer Engineering (CE), or a related field (or equivalent experience) 10 years of proven track record in DRAM design, module design, or memory sub system design. Deep understanding and strong fundamental of memory design, features, ECC algorithm, SI and PI (Training algorithm) in DDR, LPDDR, and HBM. Strong understanding of memory sub system level interaction with Cache, Memory controller and PHY. Experience in the design, bring-up and validation for memory failure analysis Experience with Python, C/C
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Sr Design Engineer, you will work on design, simulation, and validation of next ‑ generation High ‑ Bandwidth Memory (HBM) architectures and circuit blocks. HBM requires advanced DRAM design knowledge combined with deep understanding of 3D stacked architecture, TSV signaling, wide I/O interfaces, PHY timing, power integrity, and system co ‑ optimization with GPUs/accelerators. This role sits at the intersection of DRAM design and high ‑ performance computing, enabling future AI/ML, HPC, and advanced graphics products. In this position, you will collaborate with Micron’s various design and verification teams all over the world and support the efforts of groups such as Product Engineering, Test, Probe, Process Integration, Assembly and Marketing to proactively design products that optimize all manufacturing functions and assure the best cost, quality, reliability, time-to-market, and customer satisfaction.
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron is advancing a historic $15 billion investment in semiconductor manufacturing in Boise, Idaho, with DRAM production planned for the second half of the decade. As a global leader in memory and storage solutions, Micron is investing more than $150 billion worldwide over the next decade to expand groundbreaking manufacturing capabilities and drive innovation across the semiconductor industry. Join the Boise expansion team and help build the future of semiconductor manufacturing. You will work alongside experienced engineers to develop advanced processes, solve complex manufacturing challenges, and support the production of technologies that power everything from artificial intelligence to next-generation computing systems. As a Dry Etch Process Engineer, you will contribute to the development, optimization, and sustainment of semiconductor manufacturing processes. You will gain hands-on experience in a brand new fabrication environment, working with multi-functional teams to improve yield, quality, reliability, and productivity. This is an excellent opportunity to apply engineering fundamentals, develop technical expertise, and grow your career in semiconductor manufacturing. Responsibilities Support the development and optimization of dry etch processes to improve product performance, yield, and manufacturing efficiency. Analyze process and manufacturing data to identify trends, solve issues, and implement corrective actions. Partner with process integration, equipment,
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our Vision Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate, and advance faster than ever. Micron is advancing a historic $15 billion investment in semiconductor manufacturing in Boise, Idaho, with DRAM production planned for the second half of the decade. As a global leader in memory and storage solutions, Micron is investing more than $150 billion worldwide over the next decade to expand leading-edge manufacturing capabilities and drive innovation across the semiconductor industry. Join the Boise expansion team and help build the future of semiconductor manufacturing. You will work alongside experienced engineers to develop advanced processes, solve complex manufacturing challenges, and support the production of technologies that power everything from artificial intelligence to next-generation computing systems. Position Overview As a PCVD Process Engineer , you will contribute to the development, optimization, and sustainment of semiconductor manufacturing processes. You will gain hands-on experience in a state-of-the-art fabrication environment, partnering with teams to improve yield, quality, reliability, and productivity. This role offers an outstanding opportunity to apply engineering fundamentals, build technical expertise, and develop a career in advanced semi
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron Technology, we transform how the world uses information to enrich life for all. The Heterogeneous Integration Group (HIG) HBM Architecture team develops next-generation High-Bandwidth Memory (HBM) solutions that power AI, high-performance computing, cloud infrastructure, and advanced networking systems. The team works across architecture, design, verification, packaging, product engineering, and technology development to evaluate innovative memory architectures and deliver scalable, high-performance semiconductor solutions. As an HBM Design Architect, New College Graduate, you will contribute to the evaluation and development of future HBM and DRAM architectures. Working with experienced architects and engineering teams, you will analyze system and block-level design tradeoffs related to performance, power, area, thermal behavior, reliability, and manufacturability. This role provides an opportunity to leverage AI, Large Language Models (LLMs), and data-driven engineering methodologies to accelerate architecture exploration and improve decision-making. Responsibilities Analyze HBM and DRAM architectures using analytic
DRAM Power Architect (MTS) — Boise, ID - Main Site. Apply via Workday.
DRAM Power Architect, DEG — Boise, ID - Main Site. Apply via Workday.
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