Intern Design Engineer in Richardson

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we are transforming how the world uses information to enrich life. The High Bandwidth Memory (HBM) Design team develops industry-leading memory solutions that enable advances in Artificial Intelligence, high-performance computing, graphics, and data-center applications. Our engineers collaborate across global teams to deliver innovative memory architectures and semiconductor technologies that power next-generation computing systems. As an HBM Design Engineer Intern, you will work alongside experienced memory engineers and gain hands-on experience in semiconductor design, simulation, verification, and analysis. This internship provides exposure to industry-standard design methodologies, EDA tools, and cross-functional collaboration throughout the product development lifecycle. You will also have opportunities to apply AI-Assisted and AI-Enabled workflows to improve engineering productivity, debug efficiency, and design quality. Responsibilities Assist with the design, simulation, analysis, and verification of HBM memory and logic circuits using industry-standard semiconductor design tools. Support RTL development, circuit implementation, timing analysis, power analysis, and functional validation activities. Develop scripts, automation solutions, and AI-Assisted workflows to improve design productivity, debug efficiency, and design-flow quality. Collaborate with Design, Verification, Physical Design, CAD, and Product Engineering teams on technical reviews, debug activities, and project deliv

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we are transforming how the world uses information to enrich life. The High Bandwidth Memory (HBM) Design team develops industry-leading memory solutions that enable advances in Artificial Intelligence, high-performance computing, graphics, and data-center applications. Our engineers collaborate across global teams to deliver innovative memory architectures and semiconductor technologies that power next-generation computing systems. As an HBM Design Engineer Intern, you will work alongside experienced memory engineers and gain hands-on experience in semiconductor design, simulation, verification, and analysis. This internship provides exposure to industry-standard design methodologies, EDA tools, and cross-functional collaboration throughout the product development lifecycle. You will also have opportunities to apply AI-Assisted and AI-Enabled workflows to improve engineering productivity, debug efficiency, and design quality. Responsibilities Assist with the design, simulation, analysis, and verification of HBM memory and logic circuits using industry-standard semiconductor design tools. Support RTL development, circuit implementation, timing analysis, power analysis, and functional validation activities. Develop scripts, automation solutions, and AI-Assisted workflows to improve design productivity, debug efficiency, and design-flow quality. Collaborate with Design, Verification, Physical Design, CAD, and Product Engineering teams on technical reviews, debug activities, and project deliv

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology’s DRAM and Emerging Memory Group (DEG) is a distributed team of engineers and innovators focused on advancing next-generation memory technologies. For more than 43 years, Micron has been a leader in semiconductor innovation, delivering solutions that power applications ranging from artificial intelligence and high-performance computing to immersive digital experiences. The team is committed to innovation, integrity, sustainability, and meaningful community impact while driving the future of memory technology. As an HBM Memory Design Engineer, you will design, analyze, and optimize digital, analog, and memory circuits used in High Bandwidth Memory (HBM) products. You will collaborate with global design, verification, and product teams to develop high-performance DRAM solutions that meet manufacturability, reliability, and performance objectives. This role provides the opportunity to contribute to innovative memory technologies supporting AI, HPC, and data-centric applications. As part of Micron’s AI-Enabled workforce transformation, you will leverage AI-Assisted tools and data-driven methodologies to improve engineering productivity, accelerate design analysis, enhance decision-making, and drive innovation throughout the product development lifecycle. Responsibilities Design, analyze, and optimize memory, logic, and analog circuits for HBM products, including support for layout, validation, and tape-out activities. Perform circuit verification, parasitic modeling, and design simulations