Dram Disability Jobs

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, the DRAM Design organization develops industry-leading memory solutions that span technology development, advanced circuit design, product engineering, system validation, and manufacturing enablement. Teams collaborate globally to deliver innovative memory products that meet demanding requirements for performance, quality, reliability, and time-to-market. As an Intern DRAM Design Engineer, you will contribute to the design, analysis, verification, and optimization of digital, analog, and mixed-signal circuits used in next-generation memory products. You will work closely with design, verification, product engineering, test, process integration, assembly, and marketing teams to support new product development and manufacturability initiatives. This role also provides opportunities to apply Artificial Intelligence and AI Assisted methodologies to improve design workflows, automation, and design quality. Responsibilities Play a key role in the development of new memory products through circuit build, layout, optimization, and validation of Memory, Logic, and Analog circuits. Support physical design activities including parasitic modeling, floor-planning, placement, routing, reticle experiments, tape-out revisions, and design verification using industry-standard simulation tools. Collaborate with global design, verification, product engineering, test, process integration, assembly, and marketing teams to improve manufacturability, quality, and product performance. Proactiv

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron’s DRAM Design Engineering Group (DDEG) is where innovation meets excellence. We are passionate about advancing memory and storage technologies through collaborative engineering and creative problem-solving. Our team works at the forefront of semiconductor design, developing groundbreaking solutions that shape the future of memory products in a dynamic, learning-focused environment. As a Design Engineer, you will play a key role in developing next-generation memory technologies by designing, analyzing, and optimizing digital and analog circuits. You will collaborate with global cross-functional teams throughout the product lifecycle, helping deliver high-quality, manufacturable memory solutions that meet performance, reliability, cost, and customer requirements. Responsibilities: Contribute to the design, layout, verification, and optimization of memory, logic, and analog circuits for new product development Perform parasitic modeling and support design validation, reticle experiments, and tape-out revisions Lead layout activities including floor planning, placement, and routing Partner with Product Engineering, Test, Probe, Assembly, Process Integration, and Marketing teams to ensure manufacturable product designs Collaborate with CAD, modeling, standards, and verification teams to improve design quality and execution Minimum Qualifications: Bachelor’s or Master’s degree in Electrical Engineering Minimum 4 years o

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. DRAM ASIC Architecture Role Overview Micron is seeking an experienced architect to drive the definition of next-generation DRAM products incorporating advanced CMOS-based logic die technologies. This role will help define how future DRAM products leverage advanced CMOS logic die technologies to enable higher levels of integration, observability, reliability, power efficiency, security, and system differentiation beyond what is achievable in conventional DRAM-only implementations. The architect will define architectures that leverage advanced logic die capabilities to complement and enhance DRAM functionality across LPDDR, DDR, HBM and future heterogeneous memory solutions. The successful candidate will architect I/O, reliability, manageability, interface, test and system-enhancement functions. The role requires strong collaboration across DRAM design, ASIC architecture, packaging, process technology, product engineering, validation, firmware, and system architecture teams. Key Responsibilities Define next-generation DRAM + logic-die architectures, including functional partitioning between DRAM arrays, peripheral circuitry, and advanced CMOS logic die platforms – to optimize performance, power, cost, reliability, and product differentiation. Identify and evaluate system, interface, reliability, test, management, and control functions that may benefit from advanced logic-die implementations; perform architectural tradeoff analysis coverin

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a DRAM System Engineer in the DRAM System Validation Group at Micron Technology, Inc., you will be responsible for system-level validation, system characterization, failure analysis and experimentation as requested. We will be running and configuring diagnostic software, designing experiments, analyzing and interpreting data, crafting custom tools, and presenting data to customers both inside and outside Micron. Apply AI-enabled tools (e.g., data analytics, automation, or Copilot-based solutions) to improve system-level validation, failure analysis, and engineering productivity. On occasion, you may need to carry out these responsibilities at the customer site. We will work with colleagues in the Systems Compatibility Group, in Application Engineering Groups, Product Engineering, Return Material Authorization (RMA), and throughout Micron! Education: Bachelor’s Degree in Electrical Engineering, related field of study, or equivalent experience Successful candidates for this position will have: Familiarity with DRAM and System operations Good understanding system level debug Good multi-tasking, teamwork and problem solving skills Strong verbal and written communication skills in English Preferred Skills and Experience with: Application engineering or design experience related to memory testing and

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Do you love the interaction of cutting-edge hardware and innovative software solutions? In today's data economy, Micron's memory and storage products are essential to advancing state of the art computing technology. Continued scaling of memory technology presents challenges that require complex and creative testing solutions. As a Product Test Engineer, you will be responsible for the development, debug and maintenance of test programs that help deliver Micron's world-class DRAM portfolio to market. A product test engineer can be focused on the health and quality of the memory cells [DRAM features 16 billion cells in less than 80mm^2 of area] or focused on high-speed interface, AI proficiency, AI supported workflow automation, and system level application testing. Responsibilities Develop, debug and support test programs from new product introduction phase up through high volume manufacturing Write test programs and support scripts in C++, Python Contribute input and feedback to help define next generation 'design for test' capabilities Analyze device and test flow data to make informed test coverage decisions Balance test time objectives while maintaining optimal yield and quality

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron's Design-Technology Co-Optimization (DTCO) team plays a critical role in bridging semiconductor device technology and circuit design to enable next-generation DRAM products. The team evaluates emerging technologies, develops methodologies for performance assessment, and contributes to early design enablement activities that influence product power, performance, and area (PPA). Through close collaboration with device, process, modeling, and design engineering teams, DTCO helps guide technology development decisions that shape future memory solutions. As a DTCO Intern, you will gain hands-on experience evaluating advanced DRAM technologies and assessing their impact on future product architectures. You will use industry-standard electronic design automation (EDA) tools, perform circuit simulations and benchmarking, and apply data analysis techniques to support technology development decisions. This position provides an opportunity to work alongside world-class engineers while developing technical skills in semiconductor technology, circuit design, and AI-enabled automation workflows. Responsibilities Evaluate emerging DRAM technologies and analyze their impact on future product architectures and design tradeoffs. Perform transistor-level simulations and circuit benchmarking using industry-standard EDA tools such as HSPICE and FineSim. Develop and utilize Claude AI-based automation workflows and data analysis processes to improve simulation efficiency and engineering productivity. <li

Principal DRAM Product Applications Engineer — San Jose, CA. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. This role combines advanced DRAM circuit design with technology development, silicon learning, and yield improvement. We work across Design, Technology Development, Product Engineering, Test, Reliability, Quality, Manufacturing, and other teams to solve challenging memory-design problems and enable future technology generations In this position, you will contribute to the design and optimization of critical DRAM circuitry, including Sense Amplifiers, timing distribution, calibration, and training features. You will influence designs from early process-node development through silicon bring-up and production ramp, using simulation, silicon data, statistical analysis, and automation to improve performance, robustness, yield, and manufacturability Responsibilities: Design, analyze, verify, and optimize memory, logic, and analog circuits, including Sense Amplifiers, timing distribution, calibration, and training features Identify design marginalities and develop circuit- or architecture-level solutions that improve DRAM robustness, performance, scalability, and yield Support new process-node development, qualification, silicon bring-up, yield learning, and production ramp through modeling, simulation, silicon experiments, electrical failure analysis, and statistical analysis Guide layout, parasitic extraction, and modeling activities for Sense Amplifiers and Wordline drivers, including floor planning, placement, routing, signal-margin optimization, and memory-bit interaction Lead technical investigati

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron is a global DRAM leader whose innovative builds push the boundaries of future semiconductors. We seek a dynamic BEOL Process Integration Expert with proven experience in developing, transferring, and optimizing advanced DRAM technologies. Our team enjoys solving complex integration challenges and improving yield, reliability, and manufacturability. Known for technical leadership, strategic vision, and passion for semiconductor advancement, this role suits ambitious and determined candidates eager to make a big impact. Responsibilities In this role, you will need to have strong semiconductor Process Integration skills in an R&D department. You will be developing the future generation DRAM technologies. This position is intended to be part of Micron's Technical Leadership Program (TLP). This is a career path for individuals seeking to advance as technical leaders and industry innovators. TLP members are expected to influence, lead, and mentor others. Define and implement BEOL process flows, build rules, and specifications for advanced DRAM products. Lead troubleshooting and resolution of complex integration issues spanning multiple modules and fields. Drive yield improvement and reliability enhancement initiatives using data-driven methodologies. Coordinate technology transfers, ensuring robust process qualification and rapid ramp to high-volume manufacturing. Engage in industry benchmarking and collaborative projects to maintain te

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are the Compute and Memory Business Unit (CMBU), driving the innovation behind Micron's next generation DRAM solutions for AI, data center, and client computing platforms. Our team collaborates across product architecture, design, validation, and system engineering to solve complex challenges in bandwidth, power, reliability, and scalability. Together, we help shape the future of memory technology for the world's most demanding compute environments. As a Product Architecture Engineer focused on Signal Integrity (SI) and Power Integrity (PI), you will define the electrical architecture that enables next-generation DRAM products. This highly visible role combines deep technical expertise with system-level thinking to influence product roadmaps, guide design decisions, and partner with industry-leading ecosystem stakeholders. Your work will help deliver memory solutions that power tomorrow's AI and high-performance computing platforms. Responsibilities: Lead SI/PI architecture pathfinding for next-generation DRAM products across AI, data center, and client platforms Define channel, package, board, and module-level SI/PI requirements and design targets for product development Evaluate DDR and LPDDR electrical performance, including timing, jitter, signal margin, crosstalk, impedance, reflections, and power delivery behavior Develop and apply modeling, simulation, and correlation methodologies using industry-standard EDA tools and validation data Partner across design, validation, package,

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron research and development has an opening for Yield Analysis (DA) engineer to develop our next generation memory solution and to support production transfer for the next generation Micron products. As a DA engineer you will be responsible to characterize electrical data to identify and source out extrinsic and intrinsic device issues that are impacting yield. You will work closely with cross functional team from R&D and manufacturing to accelerate product to market timeline by applying device physics knowledge to develop end of line device performance prediction using machine learning. We need engineers who are passionate about detecting problems, making changes for the better, and seek out innovative ways in how predict end of line device performance. Your responsibilities will include, but are not limited to the following: Analyze end of line test, parametric and fab data to identify design, process, and test issues that are impacting yield Develop new tools for yield analysis and implement machine learning technique to improve analysis efficiency and accuracy, leveraging artificial intelligence (AI) to improve proficiency. Identify new creative and innovative ways to use existing tools to identify relevant process issues or device failures Identify interactions between process modules and/or equipment to detect fail mechanisms Use the data collected inline to drive process improvements Improve yield by standardizing methods and

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron's Boise R&D site, the DRAM Technology Development organization drives innovation in next-generation memory solutions. The team develops advanced DRAM cell architectures, access devices, materials systems, and integration technologies that enable future scaling, improved performance, enhanced reliability, and manufacturing readiness. Engineers work across device, materials, process integration, modeling, design, and product engineering teams to bring groundbreaking memory technologies from concept to production. As an intern in the Advanced DRAM Device & Cell Technology team, you will contribute to the development and characterization of future DRAM cell and access device technologies through experimental studies, data analysis, and collaboration with multidisciplinary engineering teams. This position combines semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision making to improve cell performance, density, retention, reliability, and manufacturability. The successful candidate will collaborate with multi-functional teams to evaluate novel materials, device architectures, and integration schemes supporting future memory technology development. Responsibilities Support the evaluation of DRAM access devices, capacitors, and cell stack elements through characterization, data analysis, and assessment of new device architectures, materials systems, and integration schemes. Design and implement

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners! The solutions we build help make everything from virtual reality experiences to breakthroughs in artificial intelligence possible. We do it all while committing to integrity, sustainability, and giving back to our communities, because doing so can fuel the very innovation we are pursuing. As a process integration engineer in the 3D DRAM organization, you will join a team of world-class engineers who are working in an industry leading 300mm R&D facility on technology that enables the future of memory scaling. You will focus on performance and manufacturability of Micron’s cutting-edge next-generation memories. Areas of concentration will include integration and circuit issues specific to 3D DRAM technology. In addition to a broad basis of process integration knowledge, this position requires a strong background in materials science and semiconductor device physics, along with a creative mindset and effective project management. The role interacts significantly with process development, simulation, characterization, and reliability groups. Responsibilities: Contribute to technology development activities to enable next generation DRAM, working on device components such as charge storage devices and thin-film transistors, among others. Optimize process flows and develop creative solutions to meet product requirements. Engage numerous cross-functional te

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a PYE Engineer, you will work on the Product Yield Enhancement Failure Analysis team to support legacy DRAM products throughout their manufacturing lifecycle. You will focus on yield improvement, product reliability, and component failure analysis to identify and resolve issues, enable stable production, and support quality requirements for industrial and automotive customers. Your responsibilities will require using electrical and physical characterization techniques combined with AI supported workflows and statistical data analysis to identify failures related to fabrication and assembly process, as well as testing marginalities. You will be responsible for communicating and coordinating component-level improvement activities with Product, Process, Quality and Test Engineering teams. Job Duties Perform electrical failure analysis to understand failure mechanisms Identify causes of component failures through statistical data analysis Work closely with cross-functional engineering teams to resolve fabrication and assembly process defect related issues and test flow marginalities Use statistical data analysis, data visualization, and AI tools to identify trends, accelerate root cause investigations, and improve component performance Communicate findings clearly through written reports and presentations Minimum Qualifications: At least a bachelor’s degree in Electrical or Computer Engineering, Physics, or Materials S

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of a pathfinding organization focused on developing the technologies that will enable the next generation of memory solutions. Our team brings together engineers, scientists, and innovators working at the forefront of semiconductor research and development to solve sophisticated scaling, performance, and power challenges for future memory products. In this role, you will help develop the future of advanced memory technology by driving the development of first in industry Advanced DRAM solutions! You will collaborate across process integration, device engineering, materials science, characterization, and reliability teams to transform innovative concepts into silicon and deliver breakthrough memory architectures. Responsibilities: Lead process integration efforts for Advanced DRAM technologies, including charge storage devices, thin-film transistors (TFTs), and related device components Develop and integrate new memory device architectures from concept through silicon implementation and productization Design and implement experiments to evaluate device performance, variability, reliability, and failure mechanisms Partner with cross-f