Dram Layout Engineer Jobs

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Contribute to the development of new product opportunities by assisting with the overall design, layout, and optimization of DRAM Memory array/Peripheral Logic/Analog circuits Actively leverage AI‑based tools, agentic workflows, and automation frameworks to: Accelerate schematic optimization and design‑space exploration Assist in parasitic analysis, sensitivity studies, and corner coverage Improve debug efficiency across simulation and silicon learning loops Define semicustom methodology for memory design Collaborate with CAD, EDA, and software teams to integrate AI‑driven flows into simulation, verification, and design sign‑off environments. Oversee and manage the layout process including floor-planning, placement, and routing Perform circuit-level verification including functional, timing, power and reliability analysis using industry standard and Micron-specific simulators and tools. Contribute to cross-group communication to work towards standardization and group success Drive innovation into the future memory generations and design methodology within a dynamic work environment Minimum Qualifications Master’s degree in electrical or computer engineering with 15+ years of experience in vlsi design. Strong fundamentals in CMOS circuit design, device physics and memory operation. Proven lea

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 43 years, Micron Technology has delivered world‑leading memory and semiconductor solutions. As an HBM Memory Design Engineer on the HBM Architecture Team, you will design, simulate, optimize, and floorplan advanced DRAM circuits for next‑generation High Bandwidth Memory products. You will work across digital, analog, and mixed-signal domains to ensure functional correctness, performance, and power efficiency. Your role includes collaborating with globally distributed teams developing modern HBM solutions for AI and ML applications. Responsibilities • Design, simulate, and optimize DRAM memory arrays, data paths, ECC, command/control logic, and high‑speed interface circuits • Evaluate block‑level and full‑chip functionality and propose solutions to ensure functional correctness • Analyze timing, area, power, and complexity trade‑offs in high‑speed DRAM and mixed‑signal designs • Perform pathfinding and feasibility studies for new architectures and future HBM products • Contribute to the design, layout, and optimization of memory, logic, and analog circuits • Support large‑scale verification, debug, and silicon validation activities • Collaborate across multi-functional teams involved in TSV‑based 3D stacking and vertical integration • Participate in design reviews and drive continuous improvement of design methodologies Minimum Qualifications • BSEE with 7+ years or MSEE with 5+ years of relevant engineering experience • Strong knowledge of

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As an HBM Memory Design Engineer in Micron’s HBM Architecture Team, you will design, simulate, analyze, and floorplan digital and analog DRAM circuits used in advanced HBM technology. You will evaluate block-level and full-chip functionality, perform architectural pathfinding, and contribute to the development of next‑generation high‑bandwidth DRAM solutions. This role works across diverse engineering teams to deliver functionally accurate, low‑power, and high‑performance HBM products by bringing to bear 3D stacking and TSV-based integration. Responsibilities • Design, simulate, and optimize digital and analog DRAM circuits including data path, ECC, command/control, and high‑speed timing structures • Evaluate full‑chip and block‑level functionality and propose solutions to achieve correct circuit and system behavior • Perform timing, area, power, and complexity analysis for high‑speed DRAM and mixed‑signal circuits • Conduct pathfinding studies and feasibility analyses for future HBM architectures • Contribute to the development, layout, and optimization of memory, logic, and analog circuits • Analyze circuit behavior under varying PVT and parasitic conditions to ensure robust operation • Collaborate with multi-functional teams across build, verification, product engineering, process, and packaging • Support design reviews, documentation, and continuous improvement of design methodologies Minimum Qualifications • BSEE with 7+ years, or MSEE with 5+ years of releva

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 43 years, Micron Technology, Inc. has advanced the world’s most innovative memory and semiconductor technologies. As an HBM Memory Design Engineer within the HBM Architecture Team, you will design, simulate, and optimize digital and analog DRAM circuits for next‑generation high‑bandwidth memory products. You will evaluate block‑level and full‑chip functionality, solve complex challenges in building, and collaborate with a distributed team to deliver highly reliable, industry‑leading HBM solutions. This role provides the opportunity to contribute to groundbreaking DRAM design, TSV‑based 3D integration, and high‑speed mixed‑signal architectures supporting Machine Learning and AI applications. Responsibilities Design and analyze digital, analog, and mixed‑signal circuits for HBM DRAM products. Perform schematic entry, simulation, and optimization of DRAM blocks including data path, ECC, command control, and clocking circuits. Evaluate full‑chip and block‑level functionality and deliver solutions ensuring functional accuracy. Conduct pathfinding and feasibility studies for next‑generation HBM architectures. Optimize circuit timing, area, power, and complexity across high‑speed DRAM designs. Support design floor planning, layout reviews, and cross‑domain integration of memory, logic, and analog circuits. Collaborate with global engineering teams to drive innovation and support vertical integration across design

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are the CMOS Device Integration Team at Micron, where we push the limits of memory technology every day. We work at the intersection of device physics, process integration, and product performance to enable the next wave of DRAM, HBM, and Compute-in-Memory innovation. If you’re excited by challenging technical problems and real-world impact, you’ll feel right at home here! In this role, you’ll serve as a technical leader shaping the future of Micron’s most advanced memory products. As a Distinguished Member of Technical Staff, you’ll drive CMOS device and module development that directly impacts array efficiency, data rates, and product scalability. Your expertise and influence will help guide technology decisions that power AI, high-performance computing, and emerging applications. Responsibilities: Develop and integrate advanced CMOS devices for next-generation DRAM, HBM, and emerging memory architectures Perform detailed electrical characterization of CMOS devices and circuits to drive performance improvements Partner with Design, TCAD, Modeling, Process, Reliability, and Layout teams to deliver integrated technology solutions Provide technical leadership, strategic recommendations, and clear presentations to guide technology direction Minimum Qualifications: Master’s degree or PhD in Electrical Engineering or equivalent practical experience 10 or more years of hands-on experience in advanced CMOS device design and/or integration 1

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities will include, but are not limited to: Design, implementation and integration of complex analog circuits such as CMOS Amplifiers, Comparators, Bandgap References, LDOs, Charge Pumps, Oscillators, DLL, IO Buffers, Analog Test Mux, Process Monitor, and Temperature sensors for advanced DRAM products. Design, implementation and integration of synchronous and asynchronous custom digital block Contributing to the development of new product opportunities by assisting with the overall design, layout, and optimization of Analog/Memory/Logic circuits. Parasitic modeling and design validation, reticle experiments and required tape-out revisions. Overseeing and managing the layout process including floor-planning, placement, and routing Performing verification processes with modeling and simulation using industry standard simulators Contributing to cross group communication to work towards standardization and group success. Working with Marketing, Probe, Assembly, Test, Process Integration, and Product Engineering groups to ensure accurate manufacturability of product. Proactively solicit guidance from Standards, CAD, modeling, and verification groups to improve the design quality. Mentor and lead young designers. Also, strong AI proficiency, a solid understanding of agentic AI models, a

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of Micron’s HBM design organization, building the test architectures that enable the most advanced memory products in the world. Our team works at the intersection of design, manufacturing, and silicon learning to make 3D‑stacked memory reliable at scale. We thrive on deep technical challenges and close collaboration across disciplines! As an HBM Design Architect, you will define how next‑generation HBM products are tested from wafer to system. This role is critical to ensuring quality, yield, and performance across complex multi‑die architectures. You’ll influence product success early, work hands-on with silicon, and partner closely with design, test, and manufacturing teams. Responsibilities: Define and implement end-to-end DFT architectures for HBM base die and DRAM die Develop DFT strategies for stacked-die, cube-level, and system-level test flows Architect test access mechanisms supporting wafer probe through final test Enable silicon observability for yield learning, debug, and failure analysis Collaborate across design, verification, layout, test, and manufacturing teams Minimum Qualifications: Bachelor’s or Master’s degree in Electrical Engineering, Computer Engineering, or related field Strong knowledge of scan, MBIST, JTAG, and boundary scan concepts Experience with wafer probe and fin

NVIDIA is now looking for a Senior Memory System Engineer to join our ASIC Memory Subsystem team! As a Senior Systems Engineer at NVIDIA, you'll join a group of hardworking engineers to develop and architect innovative Memory Solution for Tegra SoCs. In this position, you'll make a real impact in a multifaceted, technology-focused company. You will work with memory controller/PHY and Platform / System architect, Firmware, SI/PI, Memory suppliers to design and architect cutting edge, high speed and lower power memory technology for NVIDIA CPUs and SOCs. What You Will Be Doing: Analyze future DDR/LPDDR/HBM technologies to determine optimum performance, power, function and RAS in memory for Next generation SOC and Systems. Collaborate with ASIC Architects, Designers, Software and Firmware SW/FW teams to drive memory technology and associated requirements for memory controllers. Define Memory module, Package, and PCB layouts appropriate to the system workloads Debug and bring up memory evaluation / validation and failure issues on memory technology. Collaborate with DRAM suppliers and industry partners on to develop memory and memory related component technology. What We need to see: Bachelor's degree or master’s degree in Electrical Engineering, Computer Engineering (CE), or a related field (or equivalent experience) 10 years of proven track record in DRAM design, module design, or memory sub system design. Deep understanding and strong fundamental of memory design, features, ECC algorithm, SI and PI (Training algorithm) in DDR, LPDDR, and HBM. Strong understanding of memory sub system level interaction with Cache, Memory controller and PHY. Experience in the design, bring-up and validation for memory failure analysis Experience with Python, C/C

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Member of Technical Staff HBM Design Architect, you will be responsible for design and development of high-speed interface between DRAM and Base die in HBM cube! This includes designing the DRAM command and control logic, as well serializing and de-serializing scheme. You will collaborate with a highly creative and motivated development team applying brand-new memory technologies to build groundbreaking HBM products! Responsibilities: Responsible for the high-speed DRAM and Base die interface in HBM cube. Design the DRAM command and control logic, as well as serializing and de-serializing scheme at the interface. Conduct circuit simulations using standard industry simulators such as FINESIM, HSPICE and VERILOG Collaborate with data path design on floor planning and full chip testbench. Analyze timing/area/power in high-speed DRAM or mixed-signal design. Contribute to the development of new HBM product opportunities by assisting with the overall design, layout, and optimization of Memory, Logic, and Analog circuits. Qualifications: Extensive experience with DRAM operation and JEDEC specifications across DDR, LPDDR, GDDR, and HBM product families. Strong technical expertise in analog and mixed-signal circuit design. Hands-on proficiency in DRAM command decoding, bank logic, and RAS/CAS chain design. Demonstrated innovation and problem‑solving capabilities in

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our DRAM and Cell Technology team is focused on advancing memory innovation through the development of next-generation DRAM cell and device technologies. We work across disciplines to solve complex technical challenges, improve product performance, and enable future memory scaling. Join a collaborative team that is shaping the future of information technology through breakthrough memory solutions. As a DRAM Device & Cell Technology Engineer, you will play a key role in defining and optimizing next-generation DRAM architectures and technologies. You will contribute to device and cell development, lead experimental investigations, and partner with cross-functional teams to improve performance, reliability, and scalability. This is an opportunity to work on leading-edge memory technology and influence future product roadmaps. Responsibilities: Develop DRAM cell and access device technologies to improve density, retention, and disturb immunity Design and execute silicon experiments; perform electrical characterization, data analysis, and interpretation Analyze array-level behavior and collaborate with circuit teams to optimize operating conditions and sequences Partner with cross-functional teams to ensure developed solutions are scalable and manufacturable Contribute to technology roadmaps through benchmarking, technical evaluation, and strategic recommendations Minimum Qualifications: M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a re

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Process Integration Engineer working in the fast-paced DRAM R&D Memory Group, you will be instrumental in developing Micron's core memory technology critical for AI-enabled customers. The R&D development takes place in an industry-leading 300mm facility which is adjacent to our newly announced Manufacturing facility (currently under construction). Your focus will be on driving front-end process integration for future DRAM technology nodes, owning integration schemes, DOEs, and silicon learning from development through transfer to manufacturing. You will strengthen that work with device and process modeling, using simulation and device physics to build predictive insight, shorten learning cycles, and guide integration decisions. This is an integration role first; modeling is a tool you bring to it, not a standalone assignment. Responsibilities include, but not limited to: Own process integration for assigned DRAM FEOL modules: define integration schemes, drive unit process and module interactions, and deliver on technology node milestones. Design and execute DOEs on silicon, analyze inline, parametric, and yield data, and drive root cause to resolution. Apply device and process modeling (TCAD, Silvaco, Sentaurus, or comparable) to evaluate process interactions, device behavior, and scaling options, and to prioritize experiments before committing silicon. Correlate simulation results with experimental and silicon data to improve model accuracy and deepen process understanding.</li

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We're building memory technologies that power everything from AI to mobile devices. Our team works at the intersection of architecture, system analysis, and product innovation to improve energy efficiency and performance in next-generation DRAM solutions. If you enjoy solving complex technical challenges and influencing product direction through data-driven insights, you'll find exciting opportunities here. As a DRAM Power Engineer you will play a key role in shaping the power efficiency of future AI enabled memory products. You will analyze power behavior, develop models and methodologies, and influence architectural decisions that balance power, performance, and energy efficiency. This role offers broad exposure across engineering disciplines and the opportunity to work closely with teams throughout the product development lifecycle. Responsibilities: Perform AI assisted DRAM power analysis, including IDD characterization, workload-based modeling, and power breakdown analysis Develop and maintain power models, methodologies, and tools to evaluate DRAM architectures and power-performance tradeoffs Translate system and customer power requirements into recommendations that drive architectural and product decisions Define and support DRAM power targets throughout product development Partner with Design, Product Engineering, and System Architecture teams to identify and implement power improvemen

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in artificial intelligence possible! We do it all while committing to integrity, sustainability, and giving back to our communities, because doing so can fuel the very innovation we are pursuing. As a process integration engineer in the DRAM organization, you will be part of a team of world-class engineers who are working in an industry leading 300mm R&D facility on technology which enables future memory scaling. You will focus on the performance and manufacturability of Micron’s cutting-edge next-generation memories. Areas of concentration will include integration and circuit issues specific to DRAM technology. In addition to a broad basis of process integration knowledge, this position will require a strong background in semiconductor device physics. Role interacts significantly with the process development, simulation, modeling, characterization, and reliability groups. Responsibilities include, but not limited to: Lead technology integration activities in enabling manufacturability of state-of-the-art DRAM technology Engage with numerous cross-functional teams including process development, product engineering, design, yield improvement, advanced mask and probe to arrive at solutions to

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Are you excited to drive Quality initiatives on new product from Design through Qualification? Collaborating across multi-functional teams to deep dive and actively drive resolution and ensure customer satisfaction in a fast paced and dynamic environment? Innovate and develop Quality and Reliability Strategies and enhancements? All while being part of a fun and supportive team? As a Development Quality Engineer in DEMQRA DQA Design Team at Micron Technology, Inc., your responsibilities will include the following: Work with key development partners in Design, Product Engineering, Technology Development, Quality Assurance and Manufacturing to identify and mitigate potential quality and reliability issues during the Design and pre-qualification phase of new product Identify Design specific risks for new High Performance Memory product and collaborate with the Design, PE, TD and QA teams to ensure correct verification, validation and detection specs are in place to ensure visibility to the status and success of mitigation efforts Drive deep-dive problem solving and mitigation/resolution alignment across the portfolio for DRAM related quality and reliability issues Act as the Subject Matter Expert on Design related quality and Live Die reliability issues and advise Global Quality leadership on risk and mitigation strategies Partner with Design, PE, and QA to align and recommend changes to verification and/or validation flows to ensure they are optimized to meet Micron’s QR nee

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are transforming how the world uses information to enrich life for all. Within our DRAM organization, we develop next-generation memory technologies in an industry-leading 300mm R&D environment, bringing together expertise across process development, design, modeling, characterization, reliability, and manufacturing. Our team works collaboratively to advance memory scaling while improving performance and manufacturability. As a Process Integration Engineer, you will help enable state-of-the-art DRAM technologies and solve complex integration, device, yield, and circuit challenges. You will work closely with cross-functional engineering teams to optimize process flows, improve yield and margin, and translate technical data into solutions that enable future generations of memory technology. Responsibilities: Lead technology integration activities to enable manufacturability of advanced DRAM technologies Partner with process development, product engineering, design, yield, mask, and probe teams to resolve yield, performance, reliability, and margin challenges Design and implement R&D fab experiments and optimize process flows to meet product and technology requirements Analyze inline, defect, parametric