Dram Technology Transfer Process Integration Engineer Jobs

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a TCAD Engineer in the DRAM Device Technology group at Micron Technology, Inc., you will work with an industry-leading team to model, simulate, and understand advanced semiconductor devices and processes for future memory products. You will be responsible for physics-based device simulation, supporting technology development by providing quantitative insight into device behavior, variability, and reliability through TCAD tools. Responsibilities and Tasks Develop and apply TCAD simulations to analyze advanced semiconductor devices including DRAM access devices, CMOS devices, diodes, and resistive elements. Build 2D/3D device structures, define physical models (transport, recombination, traps, mobility, quantum effects, etc.), and perform parametric studies to support device and process development. Correlate TCAD simulation results with electrical characterization data to clarify physical mechanisms behind performance, variability, and reliability trends. Investigate impacts of process variations, material properties, defects, and interface states on device characteristics. Support development teams

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our DRAM and Cell Technology team is focused on advancing memory innovation through the development of next-generation DRAM cell and device technologies. We work across disciplines to solve complex technical challenges, improve product performance, and enable future memory scaling. Join a collaborative team that is shaping the future of information technology through breakthrough memory solutions. As a DRAM Device & Cell Technology Engineer, you will play a key role in defining and optimizing next-generation DRAM architectures and technologies. You will contribute to device and cell development, lead experimental investigations, and partner with cross-functional teams to improve performance, reliability, and scalability. This is an opportunity to work on leading-edge memory technology and influence future product roadmaps. Responsibilities: Develop DRAM cell and access device technologies to improve density, retention, and disturb immunity Design and execute silicon experiments; perform electrical characterization, data analysis, and interpretation Analyze array-level behavior and collaborate with circuit teams to optimize operating conditions and sequences Partner with cross-functional teams to ensure developed solutions are scalable and manufacturable Contribute to technology roadmaps through benchmarking, technical evaluation, and strategic recommendations Minimum Qualifications: M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a re

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology’s DRAM and Emerging Memory Group (DEG) is a distributed team of engineers and innovators focused on advancing next-generation memory technologies. For more than 43 years, Micron has been a leader in semiconductor innovation, delivering solutions that power applications ranging from artificial intelligence and high-performance computing to immersive digital experiences. The team is committed to innovation, integrity, sustainability, and meaningful community impact while driving the future of memory technology. As an HBM Memory Design Engineer, you will design, analyze, and optimize digital, analog, and memory circuits used in High Bandwidth Memory (HBM) products. You will collaborate with global design, verification, and product teams to develop high-performance DRAM solutions that meet manufacturability, reliability, and performance objectives. This role provides the opportunity to contribute to innovative memory technologies supporting AI, HPC, and data-centric applications. As part of Micron’s AI-Enabled workforce transformation, you will leverage AI-Assisted tools and data-driven methodologies to improve engineering productivity, accelerate design analysis, enhance decision-making, and drive innovation throughout the product development lifecycle. Responsibilities Design, analyze, and optimize memory, logic, and analog circuits for HBM products, including support for layout, validation, and tape-out activities. Perform circuit verification, parasitic modeling, and design simulations

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology’s DRAM and Emerging Memory Group (DEG) is a distributed team of engineers and innovators focused on advancing next-generation memory technologies. For more than 43 years, Micron has been a leader in semiconductor innovation, delivering solutions that power applications ranging from artificial intelligence and high-performance computing to immersive digital experiences. The team is committed to innovation, integrity, sustainability, and meaningful community impact while driving the future of memory technology. As an HBM Memory Design Engineer, you will design, analyze, and optimize digital, analog, and memory circuits used in High Bandwidth Memory (HBM) products. You will collaborate with global design, verification, and product teams to develop high-performance DRAM solutions that meet manufacturability, reliability, and performance objectives. This role provides the opportunity to contribute to innovative memory technologies supporting AI, HPC, and data-centric applications. As part of Micron’s AI-Enabled workforce transformation, you will leverage AI-Assisted tools and data-driven methodologies to improve engineering productivity, accelerate design analysis, enhance decision-making, and drive innovation throughout the product development lifecycle. Responsibilities Design, analyze, and optimize memory, logic, and analog circuits for HBM products, including support for layout, validation, and tape-out activities. Perform circuit verification, parasitic modeling, and design simulations

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities: Lead design readiness activities for new DRAM products, including risk assessments, DFMEA development, validation planning, and readiness reviews Partner with cross-functional teams to identify product risks, define validation coverage, and prioritize debug activities Drive root-cause investigations of silicon findings through data analysis, experiment planning, evidence review, and corrective action development Influence product readiness decisions by connecting design intent, validation results, silicon behavior, manufacturing constraints, and customer quality expectations Mentor engineers and help improve technical practices, readiness processes, and organizational learning across DRAM programs Minimum Qualifications: Advanced degree in Electrical Engineering, Computer Engineering, Semiconductor Engineering, Applied Physics, Materials Science, or a related technical field, or equivalent industry experience Significant experience in semiconductor design, DRAM or memory technology, silicon validation, product engineering, device characterization, circuit debug, reliability, test development, or new product introduction Proven ability to analyze sophisticated technical problems using silicon data, validation results, circuit behavior, failure analysis

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 45 years, Micron Technology, Inc. has transformed innovation with the world’s most advanced memory and semiconductor technologies. We’re an international team of visionaries and scientists, developing groundbreaking technologies that are redefining how the world uses information to enrich life. We are looking for Layout Build engineer at our Micron Technology’s DRAM Team in Guadalajara, Mexico. As a Layout Design engineer, you will be working for intensive applications such as artificial intelligence and high performance computing solution, High Bandwidth Memory. As a Layout Design Engineer you will be collaborating with peer teams crossing Micron global footprint, in a multiple projects-based environment. Responsibilities: Build and development of analog, mixed-signal, custom digital block and full chip level integration support. Perform layout verification like LVS/DRC/Antenna, quality check and documentation. Responsible for timely delivery of block-level layouts with acceptable quality. Will bee leading planning, area/time estimation, scheduling, delegation and execution to meet project schedule/achievements in multiple project environment. Optimally copresentingith Global engineering teams to assure the success of layout project. Minimum Qualification: Around 5 years of experience in analog/custom layout design in sophisticated CMOS process, in various technology nodes (Planar, FinFET). <

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Frontend Central Product Integration Engineering (PIE) team drives leading-edge process capability, best-in-class yield (bits per wafer), high product quality, and rapid time to maturity through innovation and strong cross-functional collaboration. Supporting a global DRAM and NAND technology portfolio across development and manufacturing sites in the U.S., Japan, Taiwan, and Singapore, the team ensures consistent execution of manufacturing excellence worldwide! As a Frontend Central Process Integration Senior Engineer, you will identify, align, and deploy best-known methods across the global network and develop optimized processes to achieve product maturity and sustainable performance improvement. Responsibilities and Tasks: Drive best-in-class product maturity which includes bits per wafers (yield), product grades (Repair Density and DPM) at the fastest speed and cycle of learning. In depth knowledge of processes across different loops or functions (FEOL, MOL, CELL, BEOL) to identify best optimum process integration solution to achieve the goal, knowledge on product and circuit design will be plus. Collaborate with YE, Device, RDA, Metrology team to resolve top yield issues, develop inline transparency to enable fast yield ramp and minimize excursion. Identify best known method and business process from DRAM/NAND sites and drive for alignment and standardize across network. Travel to Micron sites as necessary for face to face collaboration. </li

Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can fuel the very innovation we are pursuing. Frontend Central Product Integration Engineering team strives to deliver leading edge process capability, best-in-class bits per wafer (Yield) with highest quality and fastest speed through innovation and collaboration with cross functional team. With the diversity of technology in DRAM/NAND and geography (TD development sites – Boise/Japan, 5 manufacturing sites – US (F6, ID1), Taiwan (OMT), Japan (F15) and Singapore (F10)), Frontend Central PIE team will be responsible to identify best-known-method holistically, align best-known-method timely and implement improvement systematically across the network. As FE Central Process Integration Senior Engineer, you will be responsible to develop best optimum process to achieve product maturity. Responsibilities and Tasks: Drive best-in-class product maturity which includes bits per wafers (yield), product grades (Repair Density and DPM) at the fastest speed and cycle of learning. In depth knowledge of processes across different loops or functions (FEOL, MOL, CELL, BEOL) to identify best optimum process integration solution to achieve the goal, knowledge on product and circuit design will be plus. Collaborate with YE, Device, RDA, Metrology team to resolve top yield issues, develop inline visibility to e

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. This role combines advanced DRAM circuit design with technology development, silicon learning, and yield improvement. We work across Design, Technology Development, Product Engineering, Test, Reliability, Quality, Manufacturing, and other teams to solve challenging memory-design problems and enable future technology generations In this position, you will contribute to the design and optimization of critical DRAM circuitry, including Sense Amplifiers, timing distribution, calibration, and training features. You will influence designs from early process-node development through silicon bring-up and production ramp, using simulation, silicon data, statistical analysis, and automation to improve performance, robustness, yield, and manufacturability Responsibilities: Design, analyze, verify, and optimize memory, logic, and analog circuits, including Sense Amplifiers, timing distribution, calibration, and training features Identify design marginalities and develop circuit- or architecture-level solutions that improve DRAM robustness, performance, scalability, and yield Support new process-node development, qualification, silicon bring-up, yield learning, and production ramp through modeling, simulation, silicon experiments, electrical failure analysis, and statistical analysis Guide layout, parasitic extraction, and modeling activities for Sense Amplifiers and Wordline drivers, including floor planning, placement, routing, signal-margin optimization, and memory-bit interaction Lead technical investigati

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are the R&D DRAM Device and Cell Technology Group at Micron, working at the heart of future memory scaling in an industry‑leading 300mm R&D facility. We explore new device concepts, push the limits of DRAM cell performance, and turn deep physics understanding into manufacturable technology. If you enjoy learning fast, solving hard problems, and collaborating across process areas, this team delivers! In this role, you will play a critical part in defining and validating future DRAM device and cell technologies. As a Device Engineer, you will characterize memory arrays, analyze electrical behavior and failures, and influence process and material decisions that directly impact yield, quality, and performance. Your work will shape the electrical foundation of next‑generation DRAM products. Responsibilities: Define and drive electrical specifications for DRAM, Advanced DRAM and emerging memory technologies, translating product requirements into device-level targets for performance, reliability and scaling Design, implement, and interpret experiments to optimize cell and access device performance. This includes running materials experiment, developing new integration schemes and defining new characterization methodologies Develop physical and electrical models (TCAD and compact modeling) to identify performance, yield and reliability limiters, using advanced materials characterization, device physics insight, and statistical data analysis Creat

Engineer- DRAM, Advanced DRAM and EM Device/Cell Technology — Boise, ID - Main Site. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Are you excited to drive Quality initiatives on new product from Design through Qualification? Collaborating across multi-functional teams to deep dive and actively drive resolution and ensure customer satisfaction in a fast paced and dynamic environment? Innovate and develop Quality and Reliability Strategies and enhancements? All while being part of a fun and supportive team? As a Development Quality Engineer in DEMQRA DQA Design Team at Micron Technology, Inc., your responsibilities will include the following: Work with key development partners in Design, Product Engineering, Technology Development, Quality Assurance and Manufacturing to identify and mitigate potential quality and reliability issues during the Design and pre-qualification phase of new product Identify Design specific risks for new High Performance Memory product and collaborate with the Design, PE, TD and QA teams to ensure correct verification, validation and detection specs are in place to ensure visibility to the status and success of mitigation efforts Drive deep-dive problem solving and mitigation/resolution alignment across the portfolio for DRAM related quality and reliability issues Act as the Subject Matter Expert on Design related quality and Live Die reliability issues and advise Global Quality leadership on risk and mitigation strategies Partner with Design, PE, and QA to align and recommend changes to verification and/or validation flows to ensure they are optimized to meet Micron’s QR nee

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are transforming how the world uses information to enrich life for all. Within our DRAM organization, we develop next-generation memory technologies in an industry-leading 300mm R&D environment, bringing together expertise across process development, design, modeling, characterization, reliability, and manufacturing. Our team works collaboratively to advance memory scaling while improving performance and manufacturability. As a Process Integration Engineer, you will help enable state-of-the-art DRAM technologies and solve complex integration, device, yield, and circuit challenges. You will work closely with cross-functional engineering teams to optimize process flows, improve yield and margin, and translate technical data into solutions that enable future generations of memory technology. Responsibilities: Lead technology integration activities to enable manufacturability of advanced DRAM technologies Partner with process development, product engineering, design, yield, mask, and probe teams to resolve yield, performance, reliability, and margin challenges Design and implement R&D fab experiments and optimize process flows to meet product and technology requirements Analyze inline, defect, parametric

DRAM Device & Process Modeling Engineer — Boise, ID - Main Site. Apply via Workday.

DRAM Power Architect, DEG — Boise, ID - Main Site. Apply via Workday.