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Hbm Production Operator Jobs

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Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology’s DRAM and Emerging Memory Group (DEG) is a distributed team of engineers and innovators focused on advancing next-generation memory technologies. For more than 43 years, Micron has been a leader in semiconductor innovation, delivering solutions that power applications ranging from artificial intelligence and high-performance computing to immersive digital experiences. The team is committed to innovation, integrity, sustainability, and meaningful community impact while driving the future of memory technology. As an HBM Memory Design Engineer, you will design, analyze, and optimize digital, analog, and memory circuits used in High Bandwidth Memory (HBM) products. You will collaborate with global design, verification, and product teams to develop high-performance DRAM solutions that meet manufacturability, reliability, and performance objectives. This role provides the opportunity to contribute to innovative memory technologies supporting AI, HPC, and data-centric applications. As part of Micron’s AI-Enabled workforce transformation, you will leverage AI-Assisted tools and data-driven methodologies to improve engineering productivity, accelerate design analysis, enhance decision-making, and drive innovation throughout the product development lifecycle. Responsibilities Design, analyze, and optimize memory, logic, and analog circuits for HBM products, including support for layout, validation, and tape-out activities. Perform circuit verification, parasitic modeling, and design simulations

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Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Sr Design Engineer, you will work on design, simulation, and validation of next ‑ generation High ‑ Bandwidth Memory (HBM) architectures and circuit blocks. HBM requires advanced DRAM design knowledge combined with deep understanding of 3D stacked architecture, TSV signaling, wide I/O interfaces, PHY timing, power integrity, and system co ‑ optimization with GPUs/accelerators. This role sits at the intersection of DRAM design and high ‑ performance computing, enabling future AI/ML, HPC, and advanced graphics products. In this position, you will collaborate with Micron’s various design and verification teams all over the world and support the efforts of groups such as Product Engineering, Test, Probe, Process Integration, Assembly and Marketing to proactively design products that optimize all manufacturing functions and assure the best cost, quality, reliability, time-to-market, and customer satisfaction.

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Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are seeking a Principal Analog Design Engineer to lead the design, integration, and delivery of advanced analog and mixed-signal IPs for High Bandwidth Memory (HBM) products. This role is critical in developing and integrating high-performance analog subsystems within the HBM logic die, enabling industry-leading bandwidth, power efficiency, and reliability. As a principal engineer, you will provide deep technical leadership across analog design, IP integration, system alignment, and silicon execution, driving end-to-end success of HBM solutions. Responsibilities will include, but are not limited to: Lead the d esign and own critical HBM analog circuits, including: High ‑ speed transmitters and receivers Clock generation and distribution (PLLs, DLLs, CDRs) SerDes ‑ related analog blocks Biasing, reference, and calibration circuits

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Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron’s High‑Bandwidth Memory (HBM) Digital Design organization is seeking a Digital Physical Design Engineer to drive backend implementation of high‑performance, low‑power digital logic used in advanced memory products. This role spans backend implementation from Netlist to GDSII, with a strong focus on timing closure, power integrity, and manufacturability in advanced process technologies. The successful candidate will work closely with RTL, DFT, CAD, and verification teams to deliver high‑quality physical designs, contribute to methodology improvements, and help push performance, power, and area (PPA) targets in complex, multi‑hierarchy designs. Key Responsibilities: Own and execute physical design implementation from synthesized netlist through GDSII, including floorplanning, placement, clock tree synthesis, routing, and physical signoff Utilize AI-Enabled tools in the Netlist to GDS flow Perform and drive timing closure across multiple modes, corners, and scenarios using industry‑standard STA tools Analyze and resolve congestion, timing, IR drop, EM, and power integrity issues Develop and refine floorplans, power grids, and clocking strategies for high‑performance designs Work with placement and timing closure of custom analog hard IP macros in a digital-on-top design flow Collaborate closely with RTL designers to influence partitioning, constraints, and micro‑architecture decisions early in the design cycle Implement and va

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Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about driving innovation for next-generation memory solutions powering AI/ML and high-performance computing systems. As a Director of HBM RTL Design and Integration, you will lead a team responsible for the design, integration, and delivery of next-generation HBM SoC logic die, with a strong focus on RTL development and IP integration. You will drive technical strategy and execution across multiple product generations, working closely with architecture, verification, physical design, firmware, and product engineering teams. Key Responsibilities Lead SoC RTL design and integration for HBM logic die, including subsystem partitioning, IP integration, and SoC-level design convergence. Drive translation of architectural and micro-architectural specifications into robust, high-quality RTL implementations across multiple teams. Oversee SoC integration aspects, including clocking, reset, power intent, configuration infrastructure, and system-level design correctness. Establish design methodologies and best practices to improve quality, reuse, and development efficiency across HBM programs. Partner with SoC Architecture, Verification, Physical Design, Firmware, and System teams to ensure successful end-to-end product execution. Work closely with Product Engineering, Test, Probe, Process Integration, Assembly, and Manufacturing to ensure robust, manufacturable HBM

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