Dram Design Validation Engineer Jobs

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Summary As a DRAM Architect, you will optimize DRAM solutions for power, performance, and cost while pioneering new memory features and system-level innovations. You will collaborate with global, multi-functional teams to deliver high-quality, reliable, and power-efficient DRAM solutions that meet aggressive performance and time-to-market goals. Responsibilities: Develop comprehensive DRAM system/component solutions, specifications, and methodologies to optimize DRAM performance, power efficiency, and cost. Collaborate with multi-functional teams to brainstorm and implement innovative ideas, assess solution efficiency, and make necessary adjustments. Drive innovation in future memory generations within a dynamic work environment. Analyze system behavior and assess solution effectiveness, make data-driven optimizations and trade-offs. Communicate complex technical concepts to engineers from various backgrounds. Minimum Qualifications: 3&#43; years of proven experience in memory design, product engineering, or system architecture and usage Self-motivated with exceptional problem-solving skills and a drive to discover new solutions. Excellent communication and interpersonal skills. Bachelor’s degree or equivalent experience in Electrical Engineering, Computer Engineering, or a related field. <

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) sits within the Technology and Products Group (TPG). We are developing High Bandwidth Memory (HBM) solutions for AI and ML applications! We stack multiple DRAM chips on a high-speed memory controller using TSV (Through Silicon Via) technology, dramatically increasing memory density and bandwidth. Our designs span custom digital and RTL2GDS flows, and we are targeting the lowest power per bit in the industry. Join us as a Senior Verification Engineer and contribute to modular, scalable verification solutions for next-generation HBM DRAM products! You will work independently within a multi-functional team of technical domain experts, spanning both IP-level and SoC-level verification. You will collaborate with Design Engineering, Product Engineering, and Business Units to complete the HBM verification roadmap. You will apply your solid understanding of testbench architecture, custom or SoC verification methodologies, and 2.5D & 3D package integration to evaluate issues, define solutions, and broaden your expertise. Responsibilities: Develop and implement verification plans and architecture collateral across IP-level and SoC-level verification for current and future HBM designs Support co-verification of the overall system and participate in customer interactions to gather feedback and provide recommendations for future HBM solutions Build and improve verification methodology components and GenAI applications aligned to HBM design cycles, broadening cross-disc

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Member of Technical Staff HBM Design Architect, you will be responsible for design and development of high-speed interface between DRAM and Base die in HBM cube! This includes designing the DRAM command and control logic, as well serializing and de-serializing scheme. You will collaborate with a highly creative and motivated development team applying brand-new memory technologies to build groundbreaking HBM products! Responsibilities: Responsible for the high-speed DRAM and Base die interface in HBM cube. Design the DRAM command and control logic, as well as serializing and de-serializing scheme at the interface. Conduct circuit simulations using standard industry simulators such as FINESIM, HSPICE and VERILOG Collaborate with data path design on floor planning and full chip testbench. Analyze timing/area/power in high-speed DRAM or mixed-signal design. Contribute to the development of new HBM product opportunities by assisting with the overall design, layout, and optimization of Memory, Logic, and Analog circuits. Qualifications: Extensive experience with DRAM operation and JEDEC specifications across DDR, LPDDR, GDDR, and HBM product families. Strong technical expertise in analog and mixed-signal circuit design. Hands-on proficiency in DRAM command decoding, bank logic, and RAS/CAS chain design. Demonstrated innovation and problem‑solving capabilities in

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Unique Opportunities Lead the development of next-generation DRAM and LPDDR memory technologies that enable AI, mobile, automotive, and high-performance computing applications. Drive design innovation across memory sub-systems including array, datapath, sensing, repair, redundancy, IO, power management, and reliability features. Influence product architecture and technical roadmaps in collaboration with global engineering teams and technology leaders. Build and mentor a team of highly capable engineers while shaping the future design capabilities of the organization. Work closely with experts across design, modeling, layout, verification, product engineering, manufacturing, and system architecture. Lead adoption of advanced engineering methodologies, automation frameworks, and AI-enabled design workflows to accelerate development cycles and improve design quality. Help drive Micron's AI transformation through the practical application of Generative AI, Agentic AI, Large Language Models (LLMs), and data-driven engineering solutions. Responsibilities Define and drive strategic technical direction for memory circuit design activities across multiple projects and technology nodes. Build, lead, mentor, and develop a high-performing engineering team capable of delivering world-class memory products. Own execution, schedule, quality, and risk management for critical design deliverables. Partne

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities will include, but are not limited to: Understand design specifications and define verification scope, strategy, and plans for block/chip RTL verification Develop, execute, and maintain verification testbenches and test vectors using digital simulation tools and methodologies (SV-UVM) Run directed and constrained-random tests and regressions; analyze results and triage failures. Close verification metrics (functional coverage / code coverage as applicable) and identify verification holes to demonstrate readiness toward tapeout Provide verification support to design projects by simulating, analyzing, and debugging block level RTL. Develop Test cases/Stimulus to increase the functional coverage for all DRAM architectures and features. Develop and maintain test benches and test vectors using simulation tools and run regressions for coverage analysis and improvements. Co-work with international colleagues on developing new verification flows to take on the challenges in DRAM and emerging memory design. Debug RTL / testbench / environment issues and partner with design engineers to identify root cause, propose fixes, and prevent recurrence. Provide verification status and summaries to stakeholders; communicate risk clearly and drive action closure. Good understanding of digital circuits and experience in RTL Verification. Understand the usage of tools like Virtuoso, Xcellium, Simvision, Verdi/Verisium. Hands on experience in buildin

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The DRAM Systems & Architecture Lab researches and develops next-generation memory architectures that enable future AI, cloud, data center, and high-performance computing platforms. By combining advanced modeling, simulation, AI-enabled workflows, and architectural innovation, the team evaluates emerging memory technologies and defines solutions that improve performance, scalability, and efficiency for future memory systems. As a DRAM Architecture Research Intern, you will develop software frameworks, automation tools, and AI-assisted workflows that accelerate memory architecture research and analysis. You will work closely with architects and researchers to evaluate next-generation memory technologies, build simulation environments, perform performance analysis, and apply advanced AI capabilities to automate architectural studies and design-space exploration. Responsibilities Develop and enhance software frameworks, simulation environments, and automation tools that support DRAM architecture research and evaluation. Design and implement AI-assisted workflows for simulation generation, experiment automation, data analysis, technical documentation, and engineering productivity. Analyze memory architectures, including DRAM, LPDDR, DDR6, MRDIMM, CAMM, and emerging memory technologies, using modeling and simulation techniques. Perform performance, power, bandwidth, latency, and workload characterization studies to identify architectural trade-offs and optimization opportunities. Coll

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Summary: Micron's DRAM organization focuses on designing and developing industry leading dynamic random access memory products. These teams drive R&D, product design, and technology development for cutting edge DRAM nodes, including DDR5, LPDDR, HBM, and GDDR products that form the foundation of Micron’s global revenue leadership. Our Process Integration team is at the center of advancing next‑generation memory technology. We work closely across engineering, manufacturing, and change management to turn data into action and keep programs moving forward. If you enjoy solving complex problems and seeing your impact on real products, you’ll find a home here! We’re hiring a Senior Process Integration Technician to partner with Module Engineers and help drive day-to-day execution. This role is essential to keeping experiments, conversions, and production priorities on track through strong coordination and clear communication. You’ll play a hands‑on role in data analysis, issue resolutions, and cross‑functional alignment to support key technology milestones. Responsibilities Collaborate with cross-functional teams to interpret and complete conversions for assigned PI Engineering Module. Serve as the primary point of contact for experiment coordination, conversion activities, and lot movement logistics. Partner with PI Module Owners, Process Area Owners, PI Conversion Coordinators, and Change Management teams to ensure alignment and execution of module support tasks

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron’s Design Engineering Group (DEG) is where bold ideas become real technology. We push the limits of memory and storage innovation, and we thrive in a collaborative environment where engineers learn, build, and solve challenges together. We are driven by curiosity, creativity, and the pursuit of better solutions every day! As a Design Engineer, you will help shape the next generation of Micron’s memory products. You’ll work closely with global design, verification, and product teams to bring innovative circuit designs from concept to silicon. Your work will directly influence product performance, quality, and reliability—and contribute to advancements that define the semiconductor industry. Responsibilities: Design, optimize, and verify block‑level circuits for DRAM projects Compare silicon performance with simulation results and support correlation activities Collaborate with process integration and modeling teams on new process node development Partner with global design groups and provide layout guidance through post‑layout simulation Minimum Qualifications: Bachelor’s degree in Electrical Engineering with 2&#43; years of semiconductor design or manufacturing experience Demonstrated experience in mixed-signal, digital, or analog IC design Experience designing regulators, charge pumps, oscillators, current references, bandgaps, or comparators Proficiency with SPICE and Verilog modeling and simulation Experience working wi

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Description Job Description We are the HBM Design Architecture team within Micron’s HBM DRAM Engineering Group. We work at the intersection of design, technology, and manufacturing to deliver next‑generation HBM solutions that power AI and ML workloads worldwide. Our team thrives on deep technical collaboration, global partnerships, and solving problems that truly push memory technology forward! In this full‑time onsite role, you will provide critical technology support for the design and development of advanced HBM DRAM products. You will serve as a bridge between internal design teams, foundries, and technology development groups, helping translate advanced process capabilities into scalable, high‑performance architectures. Your work will directly impact performance, power efficiency, reliability, and long‑term HBM roadmap success. This role supports the design and deployment of AI-enabled solutions that improve efficiency and decision-making. The responsibilities outlined below represent key areas of focus for this role and are intended to be illustrative rather than exhaustive. Candidates are expected to demonstrate relevant experience in at least three of the five focus areas outlined below. Job Responsibilities Foundry Interface and Technology Alignment Act as the primary technical interface between foundry partners and Micron design organizations. Drive closure of design-process gaps through collaborative engagement with foundry process teams. Influence foundry

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Description We are the HBM Design Architecture team within Micron’s HBM DRAM Engineering Group. We work at the intersection of design, technology, and manufacturing to deliver next‑generation HBM solutions that power AI and ML workloads worldwide. Our team thrives on deep technical collaboration, global partnerships, and solving problems that truly push memory technology forward! In this full‑time onsite role, you will provide critical technology support for the design and development of advanced HBM DRAM products. You will serve as a bridge between internal design teams, foundries, and technology development groups, helping translate advanced process capabilities into scalable, high‑performance architectures. Your work will directly impact performance, power efficiency, reliability, and long‑term HBM roadmap success. This role supports the design and deployment of AI-enabled solutions that improve efficiency and decision-making. Responsibilities: Job Description The responsibilities outlined below represent key areas of focus for this role and are intended to be illustrative rather than exhaustive. Candidates are expected to demonstrate proven experience in at least three of the five focus areas outlined below. Foundry Interface and Technology Alignment Act as the primary technical interface between foundry partners and Micron design organizations. Drive closure of design-process gaps through collaborative engagement with foundry process teams. Influence foundr

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Unique Opportunities Complete ownership of verification and end to end analysis of complex full chip gate level custom designs with advanced low power and power management technologies spread across multiple categories such as DDR4,LPDDR4,DDR5 and LPDDR5 that are capable of operating at high speeds of up to 9600MT/s. Collaborate closely with design and verification team members spread across the globe, many of whom have decades of experience in memory design. Work on multi-functional tasks that can widen your skill set and experience in managing design verification of large and complex design Responsibilities Guide and set the broader direction for the verification effort of any project that the team undertakes. Lead cross-site efforts in developing verification methodology and verification environments for advanced DRAM and emerging memory products. Provide advice to senior management on significant technical issues. Strive to establish best known methods (BKM) within the group by driving development meetings, technical forums, etc. Provide verification support to design projects by simulating, analyzing and debugging pre-silicon full chip designs. Drive development of test benches and test vectors using simulation tools and run regressions for coverage analysis and improvements using Agentic AI</spa

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron's Boise R&D site, the DRAM Technology Development organization drives innovation in next-generation memory solutions. The team develops advanced DRAM cell architectures, access devices, materials systems, and integration technologies that enable future scaling, improved performance, enhanced reliability, and manufacturing readiness. Engineers work across device, materials, process integration, modeling, design, and product engineering teams to bring groundbreaking memory technologies from concept to production. As an intern in the Advanced DRAM Device & Cell Technology team, you will contribute to the development and characterization of future DRAM cell and access device technologies through experimental studies, data analysis, and collaboration with multidisciplinary engineering teams. This position combines semiconductor device physics, materials engineering, silicon experimentation, electrical characterization, and data-driven decision making to improve cell performance, density, retention, reliability, and manufacturability. The successful candidate will collaborate with multi-functional teams to evaluate novel materials, device architectures, and integration schemes supporting future memory technology development. Responsibilities Support the evaluation of DRAM access devices, capacitors, and cell stack elements through characterization, data analysis, and assessment of new device architectures, materials systems, and integration schemes. Design and implement

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron is a global leader in DRAM innovation, developing memory technologies that enable the next generation of computing, artificial intelligence, and data-driven applications. Within the Technology Development organization, the Process Integration team drives the development of future DRAM architectures by coordinating device, materials, and process innovations across multiple engineering fields. Team members work in a highly collaborative R&D environment to solve complex technical challenges and accelerate technology scaling. As a Process Integration Engineer Intern, you will contribute to the development of next-generation DRAM memory technologies through multi-functional collaboration involving process integration, device engineering, materials development, and process architecture. This role requires strong technical expertise, analytical problem-solving skills, and the ability to coordinate activities across multiple engineering organizations to achieve technology achievements and product objectives. Responsibilities Define technology achievements, design rules, structural requirements, and electrical specifications for next-generation DRAM technologies while supporting achievement of program targets and timelines. Collaborate with process development, simulation, process architecture, circuit design, and quality teams to ensure alignment with product and technology requirements. Develop and maintain documentation related to process integration plans, technical risks, issue resolution,

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Do you love the interaction of cutting-edge hardware and innovative software solutions? In today's data economy, Micron's memory and storage products are essential to advancing state of the art computing technology. Continued scaling of memory technology presents challenges that require complex and creative testing solutions. As a Product Test Engineer, you will be responsible for the development, debug and maintenance of test programs that help deliver Micron's world-class DRAM portfolio to market. A product test engineer can be focused on the health and quality of the memory cells [DRAM features 16 billion cells in less than 80mm^2 of area] or focused on high-speed interface, AI proficiency, AI supported workflow automation, and system level application testing. Responsibilities Develop, debug and support test programs from new product introduction phase up through high volume manufacturing Write test programs and support scripts in C&#43;&#43;, Python Contribute input and feedback to help define next generation 'design for test' capabilities Analyze device and test flow data to make informed test coverage decisions Balance test time objectives while maintaining optimal yield and quality

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence. The 3D DRAM Technology Development organization is responsible for advancing next-generation memory technologies that enable future computing innovations. Engineers within this team work in a brand new 300mm R&D facility, collaborating across process development, characterization, reliability, design, and simulation fields to drive memory scaling and manufacturability. As a 3D DRAM Process Integration Engineer Intern, you will support the development of next-generation DRAM technologies with a focus on device performance, reliability, and manufacturability. This role involves working on advanced memory structures, including charge storage devices and thin-film transistors, while partnering with multi-functional engineering teams to solve challenging integration and circuit-related issues. The ideal candidate will have a strong foundation in semiconductor device fabrication, materials science, and device physics, combined with data-driven problem-solving skills and a passion for technology innovation. Responsibilities Contribute to the development of next-generation DRAM technologies, including advanced memory device components such as charge storage structures and thin-film transistors. Design, complete, and analyze experiments within the R&D fabrication environment to support technology development objectives. Collaborate with process