Dram Design Working Student In Munich Jobs

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Summary Micron is seeking a Principal Physical Design Engineer to provide technical leadership for advanced DRAM digital design implementation and signoff methodologies. This role will drive physical design execution from RTL through tapeout, with a strong focus on timing closure, power integrity, EMIR analysis, and design reliability. The engineer will collaborate across architecture, RTL, implementation, CAD, and technology teams to develop scalable physical design solutions that achieve power, performance, area (PPA), and reliability targets for next-generation memory products. Additionally, this individual will lead methodology innovation, mentor engineers, and influence the future roadmap for physical design and power integrity across the organization. Responsibilities Lead physical design implementation of complex DRAM digital designs, including floorplanning, place and route, clock tree synthesis, timing closure, and tapeout activities. Drive power integrity strategies and signoff methodologies, including PDN planning, IR drop analysis, electromigration (EM) verification, and EMIR signoff. Collaborate with multi-functional teams to resolve timing, congestion, power, signal integrity, and reliability challenges at both block and full-chip levels. Develop and deploy methodology improvements, automation solutions, and guidelines to improve build quality, efficiency, and scalability. Mentor engineers and provide technical leadership while influencing future memory products t

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we build the memory and storage that powers everything from massive data centers to the devices people carry every day. Our DRAM IP Design team shapes the circuits at the heart of these products, carrying innovative designs from concept all the way to silicon. We work across global design, verification, and product teams, and the work we do here helps define where the semiconductor industry goes next! As a Principal Analog Design Engineer, you'll help shape the next generation of Micron's memory products, bringing circuit designs to life and directly influencing their performance, quality, and reliability. You'll partner with design, verification, and product teams around the world, operating with the independence and technical depth expected of a principal engineer. It's a role where your circuit decisions show up in silicon that ships at scale. Responsibilities: Design, optimize, and verify block-level analog and mixed-signal circuits for DRAM Propose, evaluate, and implement new or improved circuit topologies to enhance block PPAC Work with the internal data science team and EDA vendors to leverage agentic AI and AI-assisted design flows for circuit optimization Expand verification coverage to strengthen robustness and mass-production yield Partner with global design groups, guide layout through post-layout simulation, support silicon-to-simulation correlation, and operate independently to define solutions and methods Minimum Qualifications:

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, we build the memory and storage that powers everything from massive data centers to the devices people carry every day. Our DRAM IP Design team shapes the circuits at the heart of these products, carrying innovative designs from concept all the way to silicon. We work across global design, verification, and product teams, and the work we do here helps define where the semiconductor industry goes next! As a Principal Analog Design Engineer, you'll help shape the next generation of Micron's memory products, bringing circuit designs to life and directly influencing their performance, quality, and reliability. You'll partner with design, verification, and product teams around the world, operating with the independence and technical depth expected of a principal engineer. It's a role where your circuit decisions show up in silicon that ships at scale. Responsibilities: Design, optimize, and verify block-level analog and mixed-signal circuits for DRAM Propose, evaluate, and implement new or improved circuit topologies to enhance block PPAC Work with the internal data science team and EDA vendors to leverage agentic AI and AI-assisted design flows for circuit optimization Expand verification coverage to strengthen robustness and mass-production yield Partner with global design groups, guide layout through post-layout simulation, support silicon-to-simulation correlation, and operate independently to define solutions and methods Minimum Qualifications:

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. This role combines advanced DRAM circuit design with technology development, silicon learning, and yield improvement. We work across Design, Technology Development, Product Engineering, Test, Reliability, Quality, Manufacturing, and other teams to solve challenging memory-design problems and enable future technology generations In this position, you will contribute to the design and optimization of critical DRAM circuitry, including Sense Amplifiers, timing distribution, calibration, and training features. You will influence designs from early process-node development through silicon bring-up and production ramp, using simulation, silicon data, statistical analysis, and automation to improve performance, robustness, yield, and manufacturability Responsibilities: Design, analyze, verify, and optimize memory, logic, and analog circuits, including Sense Amplifiers, timing distribution, calibration, and training features Identify design marginalities and develop circuit- or architecture-level solutions that improve DRAM robustness, performance, scalability, and yield Support new process-node development, qualification, silicon bring-up, yield learning, and production ramp through modeling, simulation, silicon experiments, electrical failure analysis, and statistical analysis Guide layout, parasitic extraction, and modeling activities for Sense Amplifiers and Wordline drivers, including floor planning, placement, routing, signal-margin optimization, and memory-bit interaction Lead technical investigati

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. HBM Core-Die Architecture & Circuit Design Engineer This role owns next‑generation HBM core‑die architecture and critical DRAM circuit design that directly impact bandwidth, power, area, thermal efficiency, and long‑term reliability. The engineer will drive architecture definition, circuit feasibility, and Architecture Reference Design (ARD) development across advanced 3D‑stacked HBM products. This role supports the design and deployment of AI-enabled solutions that improve efficiency and decision-making. Key Responsibilities Own HBM core‑die architecture including Bank/Bank‑Group organization, array partitioning, datapath, refresh, and reliability features Drive critical DRAM circuit design and timing closure for row, column, sensing, and datapath paths Develop and optimize architecture solutions for bandwidth, power, area, thermal, and reliability trade‑offs Define and validate refresh, row‑hammer mitigation, data‑retention, and power‑efficient operation schemes Lead architecture feasibility studies using transistor‑level simulation and physical implementa

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are seeking an experience high-speed high-speed IO/Clocking Design Engineering at a Principal/Sr Member of Technical Staff (SMTS) level to join our DRAM IP Design team and contribute to the development of critical high-speed IP circuits used across Micron’s DRAM memory products. In this role, you will be responsible for the architecture, design, development, optimization, verification, and technical support of these high-speed IPs. You will focus on equalization and bandwidth extension to push the limits of circuit and process performance, analyze IO impairments as well as clock jitter and duty cycle distortion, and assess their impact on DRAM system timing. You will also develop core strategy and implement effective engineering solutions to address these challenges. Relocation to Micron headquarter in Boise, Idaho is required for this position. Responsibilities: Define, innovate, design, optimize and verify high-speed IO and clocking circuits used in new DRAM products. Apply robust high-speed circuit design techniques and enhance critical performance evaluation, including timing and jitter sensitivity, of the IO data path and clock path at circuit and full-chip level. Develop accurate modeling, analysis and simulation methodology to capture key circuit performance metrics and their impact to product specifications at full-chip and system level. Work with Product Engineering and SI team to compare silicon performance with simulation resu

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are seeking a Principal/Member of Technical Staff (MTS) IO/Clock Design Engeer to join our DRAM IP Design team and contribute to the development of critical high-speed IP circuits used across Micron’s DRAM memory products. In this role, you will be responsible for the design, development, optimization, verification, and technical support of these high-speed IPs. You will focus on equalization and bandwidth extension to push the limits of circuit and process performance, analyze IO impairments as well as clock jitter and duty cycle distortion, and assess their impact on DRAM system timing. You will also develop and implement effective engineering solutions to address these challenges. Relocation to Micron headquarter in Boise, Idaho is required for this position. Responsibilities: Innovate, design, optimize and verify high-speed IO and clocking circuits used in new DRAM products. Apply robust high-speed circuit design techniques and enhance critical performance evaluation, including timing and jitter sensitivity, of the IO data path and clock path at circuit and full-chip level. Develop accurate modeling, analysis and simulation methodology to capture key circuit performance metrics and their impact to product specifications at full-chip and system level. Work with Product Engineering and SI team to compare silicon performance with simulation results and support correlation activities. Collaborate with process integration and transistor

Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can fuel the very innovation we are pursuing. About the Role As a Member of Technical Staff (MTS) in Micron’s HBM Product Engineering Component Validation team, you will serve as a technical leader and authority for the validation of advanced High Bandwidth Memory (HBM) products. You will apply deep DRAM and HBM architecture and design knowledge to define validation coverage strategy, lead complex product debug and failure analysis, and drive a zero-escape validation mindset across all test modes and product milestones. Operating within Micron’s global validation organization and partnering closely with teams across multiple sites, you will influence design-intent-to-coverage decisions, mentor engineers, and set the technical direction for current and next-generation HBM validation. Responsibilities and Tasks Technical Leadership & Validation Strategy Act as a technical authority for HBM Component Validation, translating DRAM/HBM design intent and architecture into comprehensive validation coverage and test strategy. Define and own validation methodologies and coverage plans across structural (black-box) and functional test flows, driving toward full validation coverage at each product milestone with zero validation escapes. Lead validation definition and closure for new and high-risk product

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Design Technology Co-Optimization (DTCO) team works at the intersection of process technology, standard cell architecture, and design implementation to optimize power, performance, and area (PPA) for advanced memory products. The team collaborates closely with standard cell library, RTL, and physical design engineers to evaluate design tradeoffs and develop methodologies that improve silicon outcomes. As a DTCO Intern, you will gain hands-on experience assessing and optimizing PPA at the standard cell and logic block level. You will use industry-standard place-and-route tools and AI-enabled automation techniques to implement, benchmark, and optimize logic blocks while developing practical skills in physical design, timing closure, and design analysis. Responsibilities Implement standard cell logic blocks using industry-standard physical design tools, including floorplanning, placement, clock tree synthesis (CTS), routing, and optimization activities focused on PPA assessment. Analyze and benchmark power, performance, and area across standard cell libraries and logic block configurations, identifying opportunities for improvement. Perform static timing analysis (STA), investigate setup and hold timing violations, and support timing closure activities. Execute physical verification checks, including DRC, LVS, and IR-drop analysis, and assist with resolving design issues. Leverage Generative AI, AI Assistants, and Agentic AI solutions to automate data collection, reporting, comparison, and w

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Summary This team member will focus on performing semiconductor design engineering assignments including engineering and designing chip layout circuits, circuit checking, documenting specifications, and modifying and evaluating semiconductor devices and components. Typically responsible for projects, or portions of projects, to design, fabricate, optimize, and validate memory circuit solutions while supporting advanced semiconductor technology development. Responsibilities Design, layout, and optimize memory circuits with a focus on performance, power, area, and manufacturability. Perform circuit simulation and analysis using industry-standard tools such as SPICE and Verilog to validate circuit functionality. Develop and support schematic blocks including memory arrays, control logic, address decoders, datapaths, and internal test circuitry. Evaluate design architecture tradeoffs and incorporate layout parasitics to ensure robust circuit operation and silicon success. Drive innovation through test chip development, silicon validation, and AI-enabled improvements to design methodologies and workflows. Minimum Qualifications Bachelor’s degree in Electrical Engineering (BSEE) or higher, or equivalent experience. Basic understanding of memory array architectures, circuits, and operation. Strong understanding of circuit simulation setup, analysis, and debug techniques. Strong written and verbal communication skills with the ability to convey technical concepts

Intern - DRAM IP Circuits Design Engineer — Boise, ID - Main Site. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of Micron’s advanced memory design organization, where digital innovation directly shapes the next generation of DRAM products. We work across global teams, combining deep technical expertise with diverse perspectives to solve complex problems and push memory technology forward. We are also deeply engaged with AI tools to develop/optimize the design verification flow for better quality and efficiency This role plays a critical part in defining and delivering competitive digital IP for advanced DRAM. You will influence architecture, design, and verification while collaborating closely with layout, modeling, and CAD partners. It’s a hands-on opportunity to grow your technical depth while making a visible impact on future memory products. Responsibilities: Develop competitive digital IPs for advanced DRAM products Define design and verification requirements from specifications and reference designs Build high-level behavioral and algorithmic models for architecture verification Design IP using RTL or custom methodologies and guide layout and verification teams Collaborate with standards, CAD, modeling, and verification teams to improve design quality Leveraging AI (EX Claude Code or other AI tools) to develop, improve design quality and efficiency Minimum Qualifications: Bachelor’s degree in Electrical Engineering or related field, or equivalent experience 6+ years of experience in digit

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Summary Micron Technology is seeking a Principal RTL Design Engineer to lead the development of high-quality DRAM digital and mixed-signal IP. In this role, you will be responsible for the full RTL design lifecycle—from architecture and implementation through signoff—while delivering designs that meet aggressive power, performance, and area (PPA) targets. This position is in Boise, Idaho, offering strong opportunities for technical leadership, innovation, and collaboration across global teams. Responsibilities Own and drive RTL design for DRAM digital and mixed-signal IP from specification through silicon-ready signoff. Architect and deliver high-performance, power- and area-efficient RTL designs aligned with product requirements. Perform and sign off front-end quality checks, including lint, CDC/RDC, synthesis, UPF, and timing QoR. Collaborate closely with physical design, verification, and architecture teams to achieve timing closure and PPA goals. Improve design quality and efficiency by refining methodologies, driving automation, and enhancing RTL design flows. Minimum Qualifications Master’s degree in Electrical Engineering with 8+ years of experience, or Bachelor’s degree with 10+ years of pre-silicon RTL design experience. Proven ownership of complex RTL/IP development from micro-architecture definition through handoff to physical design. Strong experience with ASIC low-power d

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Summary Micron Technology is seeking a Principal RTL Design Engineer to lead the development of high-quality DRAM digital and mixed-signal IP. In this role, you will be responsible for the full RTL design lifecycle—from architecture and implementation through signoff—while delivering designs that meet aggressive power, performance, and area (PPA) targets. This position is in Boise, Idaho, offering strong opportunities for technical leadership, innovation, and collaboration across global teams. Responsibilities Own and drive RTL design for DRAM digital and mixed-signal IP from specification through silicon-ready signoff. Architect and deliver high-performance, power- and area-efficient RTL designs aligned with product requirements. Perform and sign off front-end quality checks, including lint, CDC/RDC, synthesis, UPF, and timing QoR. Collaborate closely with physical design, verification, and architecture teams to achieve timing closure and PPA goals. Improve design quality and efficiency by refining methodologies, driving automation, and enhancing RTL design flows. Minimum Qualifications Master’s degree in Electrical Engineering with 8+ years of experience, or Bachelor’s degree with 10+ years of pre-silicon RTL design experience. Proven ownership of complex RTL/IP development from micro-architecture definition through handoff to physical design. Strong experience with ASIC low-power design methodologies, including UPF-based power inten

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The role is junior level, only for fresh graduates.該職缺提供給畢業生。 The general responsibilities of the position are the following: DRAM Probe Testing Improve DRAM probe testing coverage and quality on DRAM products Own the DRAM probe test flow , review and sign off probe test program releases to ensure quality control Develop innovative DRAM test algorithms and Leveraging Artificial Intelligence to improve test efficiency and reduce test cost New Generation DRAM Product Development Responsible for new DRAM product startup and yield improvement Support design verification and in-depth DRAM circuit analysis using CAD tools and Verilog simulations Work with the wafer fab process / integration teams to address process-related defects impacting DRAM yield Identify design marginalities in DRAM circuits and recommend design fixes for circuit-related issues Functional and Design Validation (DRAM) Design novel DRAM test algorithms and develop test programs for validating DRAM features, modes, and commands Analyze failures generated from characterization and validation activities Automate DRAM test program development and engineering workflows using scripting and data processing tools DRAM Product Yield Enhance