Dram Design Working Student In Munich Jobs

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities Verify IP, subsystem, full-chip, and system-level HBM and DRAM designs to ensure functional correctness, performance, power efficiency, and product quality. Develop comprehensive verification plans from architecture and functional specifications in collaboration with architecture and design teams. Create, enhance, and maintain verification environments, UVM testbenches, test suites, and automated regression infrastructures. Define and execute coverage-driven verification strategies to achieve functional, assertion, and code coverage goals. Lead debug and root-cause analysis of complex design issues, drive bug resolution, and ensure verification closure. Apply advanced digital and mixed-signal verification methodologies using industry-standard simulation and verification tools. Drive continuous improvements in verification methodologies, automation, regression efficiency, and AI-assisted verification workflows. Collaborate closely with global design, architecture, product engineering, and system engineering teams to ensure successful project execution. Lead verification efforts for major HBM development programs and mentor engineers through technical leadership and knowledge sharing. Minimum Qualifications Bachelor's degree in Electrical Engineering, Computer Engineering, or a related field, or equivalent experience. 10+ years of experience in digital and/or mixed-signal design verification with a proven record of deli

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) sits within the Technology and Products Group (TPG). We are developing High Bandwidth Memory (HBM) solutions for AI and ML applications! We stack multiple DRAM chips on a high-speed memory controller using TSV (Through Silicon Via) technology, dramatically increasing memory density and bandwidth. Our designs span custom digital and RTL2GDS flows, and we are targeting the lowest power per bit in the industry. Join us as a Staff Verification Architect and shape modular, scalable verification solutions for next-generation HBM DRAM products across multiple customer platforms! You will be part of a highly multi-functional team of technical domain experts. You will collaborate closely with Design Engineering, Product Engineering, Business Units, and external customer teams to ensure our future HBM roadmap is successful. You will apply your thorough understanding of testbench architecture, custom and SoC verification methodologies, and 2.5D & 3D package integration to analyze bottlenecks and propose innovative solutions targeting scalability, quality, and verification cycle time. Responsibilities: Deliver high-quality, on-time verification plans and architecture collateral across IP-level and SoC-level verification, and develop turnkey solutions for future designs based on look-ahead information from customers and the architecture team Drive co-verification through direct customer interactions, and mentor early-career engineers to strengthen team capability and tech

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities will include, but are not limited to: Depending on the expertise, the below set of responsibilities can be interpreted for fastspice(Primesim/Finesim) or Verilog (Xcelium/VCS) based verification. Guide and set the direction for the verification effort within your areas of expertise in any project that the team undertakes. Provide verification support to design projects by simulating, analyzing and debugging pre-silicon full chip designs. Develop Test cases/Stimulus to increase the functional coverage for all DRAM and emerging memory architectures and features. Participate in developing verification methodology and verification environments for advanced DRAM and emerging memory products. Co-work with international colleagues on developing new verification flows to take on the challenges in DRAM and emerging memory design. Develop and maintain test benches and test vectors using simulation tools and run regressions for coverage analysis and improvements. Enhancing the efficiency of design and verification through leveraging Artificial Intelligence. Your Experience and Qualification: Common Familiarity with DRAM operation Familiarity with Claude Code Schematic analysis Digital Design and Verification Expertise of the following area: System Verilog UVM</l

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Description Department Overview: DRAM Engineering (DRAM Memory) focuses on designing and developing Micron’s industry leading dynamic random access memory products. The team drives process R&D, product design, and technology development for cutting edge DRAM nodes, including DDR5, LPDDR, HBM, and GDDR products that form the foundation of Micron’s global revenue leadership. We work across architecture, engineering, and business teams to evaluate innovative memory solutions and influence product direction. If you’re excited about solving complex challenges in DDR and emerging memory technologies, you’ll find strong impact and collaboration here! We are seeking an experienced Distinguished Member of Technical Staff (DMTS) Design Engineer to join the DRAM System team. This role is at the center of memory innovation. You will analyze current and next-generation memory technologies, identify performance and design gaps, and guide teams on future memory direction. Your work will directly influence architecture, product strategy, and competitive positioning, making it both highly visible and technically rewarding. This position is intended to be part of the Technical Leadership Program at Micron. This is a career path for individuals seeking to advance as technical leaders and industry innovators. TLP members are expected to influence, lead, and mentor others. Location: Boise, ID or San Jose, CA Responsibilities:

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. SUMMARY: At Micron, we focus on developing groundbreaking silicon-to-systems solutions. We handle technology development, advanced memory builds, product development, system development, and validation to create world-class memory solutions. In this position, you will collaborate with Micron’s global design, layout, and verification teams to develop high-quality physical layouts for cutting-edge DRAM products. You will gain hands-on experience in semiconductor layout building, physical verification, and industry-standard Electronic Compose Automation (EDA) tools. RESPONSABILITIES: Design and Verify All Levels of Analog and Digital Layout Use computer aided design software (i.e. Cadence, Calibre, etc.) Work with Design Engineers to floor plan and design layout Understand and follow verification protocols Apply custom and/or automated layout techniques to design pitch, array, and peripheral layout for digital and analog circuits. Collaborate with build engineering to understand layout methodology. Possess basic understanding of circuit design and electronics. Minimum Qualifications: Student pursuing a bachelor's degree (last 2 semesters preferred) in Electrical Engineering, Electronics Engineering, Mechatronics, Robotics, Nanotechnology, Computer Engineering, or a related field. Completed coursework or academic projects related to microelectronics, semiconductor devices, VLSI, or integrated circuit design.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities: Lead design readiness activities for new DRAM products, including risk assessments, DFMEA development, validation planning, and readiness reviews Partner with cross-functional teams to identify product risks, define validation coverage, and prioritize debug activities Drive root-cause investigations of silicon findings through data analysis, experiment planning, evidence review, and corrective action development Influence product readiness decisions by connecting design intent, validation results, silicon behavior, manufacturing constraints, and customer quality expectations Mentor engineers and help improve technical practices, readiness processes, and organizational learning across DRAM programs Minimum Qualifications: Advanced degree in Electrical Engineering, Computer Engineering, Semiconductor Engineering, Applied Physics, Materials Science, or a related technical field, or equivalent industry experience Significant experience in semiconductor design, DRAM or memory technology, silicon validation, product engineering, device characterization, circuit debug, reliability, test development, or new product introduction Proven ability to analyze sophisticated technical problems using silicon data, validation results, circuit behavior, failure analysis

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities: Develop system-level solutions, tools, and methodologies to optimize DRAM performance, power efficiency, and cost. Collaborate with multi-functional teams to ideate, evaluate, and implement innovative DRAM and memory system solutions. Analyze system behavior and assess solution effectiveness, making data-driven optimizations and trade-offs. Drive architectural innovation for current and future generations of DRAM technologies. Communicate complex technical concepts clearly and mentor team members through training and technical guidance. Using AI in applicable job functions Minimum Qualifications: Proven experience in memory design and product engineering, memory specifications and operations, or memory system architecture and usage. Minimum of 7 years of experience in the memory or semiconductor industry. Strong understanding of DRAM architectures and system-level interactions. Ability to analyze complex technical problems and drive solutions. Bachelor’s degree in Electrical Engineering, Physics, Computer Engineering, or a related field, or equivalent experience. Preferred Qualifications: Experience with advanced memory technologies such as LPDDR5/6, DDR5/6, GDDR6/7, or HBM3E/4. Strong analytical and problem-solving skills with a passion for innovation. Ability to identify complex technical challenges and develop creative, scalable solutions. Deep under

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We're building memory technologies that power everything from AI to mobile devices. Our team works at the intersection of architecture, system analysis, and product innovation to improve energy efficiency and performance in next-generation DRAM solutions. If you enjoy solving complex technical challenges and influencing product direction through data-driven insights, you'll find exciting opportunities here. As a DRAM Power Engineer you will play a key role in shaping the power efficiency of future AI enabled memory products. You will analyze power behavior, develop models and methodologies, and influence architectural decisions that balance power, performance, and energy efficiency. This role offers broad exposure across engineering disciplines and the opportunity to work closely with teams throughout the product development lifecycle. Responsibilities: Perform AI assisted DRAM power analysis, including IDD characterization, workload-based modeling, and power breakdown analysis Develop and maintain power models, methodologies, and tools to evaluate DRAM architectures and power-performance tradeoffs Translate system and customer power requirements into recommendations that drive architectural and product decisions Define and support DRAM power targets throughout product development Partner with Design, Product Engineering, and System Architecture teams to identify and implement power improvemen

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron has an opening for a Photolithography Engineer (Level 2 or 3) at our Boise, Idaho facility. This position is part of Micron’s Technology Development organization, where advanced ideas become manufacturable technologies. Our team works at the leading edge of memory innovation, partnering across design, integration, manufacturing, and equipment suppliers to enable the next generation of semiconductor devices. This is where curiosity, experimentation, and impact come together. As a Photolithography Engineer, you will play a key role in developing and integrating lithography processes that directly shape future memory technologies. You will work hands-on with tools, materials, layouts, and data, while leveraging Artificial Intelligence and other software, collaborating with global partners to move innovations from R&D into high-volume manufacturing. This role offers broad technical exposure and the opportunity to influence device performance, yield, and cost at scale. Responsibilities: Develop and integrate photolithography unit processes for advanced memory technologies Perform material evaluations, reticle, and layout development, OPC, overlay optimization, and process window analysis Drive yield improvement, failure analysis, and device performance optimization Partner with equipment vendors to evaluate tools and improve process capability Document processes, communicate results, and support technology transfer to manufacturing Leverage Artifi

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) sits within the Technology and Products Group (TPG). We are developing High Bandwidth Memory (HBM) solutions for AI and ML applications! We stack multiple DRAM chips on a high-speed memory controller using TSV (Through Silicon Via) technology, dramatically increasing memory density and bandwidth. Our designs span custom digital and RTL2GDS flows, and we are targeting the lowest power per bit in the industry. Micron’s High Bandwidth Memory (HBM) Design Verification team is responsible for ensuring the functionality, performance, and quality of next‑generation memory products that enable advanced computing applications. As a Senior Design Verification Engineer, you will collaborate closely with design, architecture, and product engineering teams to verify complex, high‑density DRAM circuits and deliver robust, production‑ready designs. This role combines deep technical verification expertise with cross‑functional collaboration in a global environment. You will be challenged by the complexity and difficulty of verifying high density memory chips (up to 32Gb) with huge scale of circuit capability (over 4M transistors), ultra-high speed designs, sophisticated functionality which includes next Generation DDR/LPDDR (ex: DDR5, LPDDR5) and advanced low power and power management technologies. You will be responsible to evaluate the functionality and performance of the Full-chip and block-level circuit designs using different verification tools, techniques, and strategies. In addition, you will also n

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Key Responsibilities: Contribute to the development of new product opportunities by assisting with the overall design, layout, and optimization of DRAM Memory array/Peripheral Logic/Analog circuits Actively leverage AI‑based tools, agentic workflows, and automation frameworks to: Accelerate schematic optimization and design‑space exploration Assist in parasitic analysis, sensitivity studies, and corner coverage Improve debug efficiency across simulation and silicon learning loops Define semicustom methodology for memory design Collaborate with CAD, EDA, and software teams to integrate AI‑driven flows into simulation, verification, and design sign‑off environments. Oversee and manage the layout process including floor-planning, placement, and routing Perform circuit-level verification including functional, timing, power and reliability analysis using industry standard and Micron-specific simulators and tools. Contribute to cross-group communication to work towards standardization and group success Drive innovation into the future memory generations and design methodology within a dynamic work environment Minimum Qualifications Master’s degree in electrical or computer engineering with 4-8 years of experience in memory design. Strong fundamentals in CMOS circuit design, device physics and memory operation. Experience with SPICE-based simulation and parasitic extraction. </

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron is a global leader in DRAM technology, driving innovation that enables the next generation of computing, artificial intelligence, and data-driven applications. The DRAM Technology Development organization focuses on advancing semiconductor manufacturing capabilities through collaborative research, process innovation, and technology scaling. Team members work across multiple engineering fields to develop breakthrough memory solutions that shape the future of the industry. As a Process Integration Engineer, you will contribute to the development of next-generation DRAM technologies by collaborating with process, materials, device, and design engineering teams. This role is responsible for coordinating module-related development activities, defining technical requirements, resolving complex integration challenges, and supporting the successful execution of technology development programs. The ideal candidate will possess strong semiconductor process integration knowledge and a passion for advancing future memory architectures within a fast-paced R&D environment. Responsibilities Define technology landmarks, design rules, structural and electrical specifications, and integration requirements for next-generation DRAM products. Collaborate with multi-functional teams including simulation, process development, process architecture, circuit design, and quality engineering to achieve technical objectives and project timelines. Lead module-related integration activities, identify techni

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) within Micron's Technology and Products Group (TPG) leads the development of High Bandwidth Memory (HBM) solutions for AI and ML applications. Our modern builds use Through Silicon Via (TSV) technology. We stack multiple DRAM chips on a high-speed memory controller with a coordinated logic chip in one package. This new way improves memory density and bandwidth through parallelization. It aims to deliver the lowest power per bit solutions in the industry. Micron is seeking a Design Infrastructure Engineer to build, enable, and scale characterization infrastructure and deliver generated IP to multiple advanced memory and logic developments. This position includes characterizing both standard and custom cells across various process technologies. These encompass Micron internal nodes as well as external foundries, such as TSMC. The position supports multiple HBM product lines, including HBM DRAM dies, Logic dies (JEDEC and custom variants), and advanced 3D HBM architectures. You will work where circuit build, EDA infrastructure, and silicon validation readiness meet. You will develop robust, scalable, and high-quality characterization flows. These flows directly affect timing closure, power modeling, and product quality for next-generation HBM programs. Responsibilities: Develop and sustain scalable infrastructure for standard cell and custom cell characterization, encompassing timing, power, noise, and signal integrity modeling. Build reusable, a

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Key Responsibilities: Contribute to the development of new product opportunities by assisting with the overall design, layout, and optimization of DRAM Memory array/Peripheral Logic/Analog circuits Actively leverage AI‑based tools, agentic workflows, and automation frameworks to: Accelerate schematic optimization and design‑space exploration Assist in parasitic analysis, sensitivity studies, and corner coverage Improve debug efficiency across simulation and silicon learning loops Define semicustom methodology for memory design Collaborate with CAD, EDA, and software teams to integrate AI‑driven flows into simulation, verification, and design sign‑off environments. Oversee and manage the layout process including floor-planning, placement, and routing Perform circuit-level verification including functional, timing, power and reliability analysis using industry standard and Micron-specific simulators and tools. Contribute to cross-group communication to work towards standardization and group success Drive innovation into the future memory generations and design methodology within a dynamic work environment Minimum Qualifications Master’s degree in electrical or computer engineering with 4-8 years of experience in memory design. Strong fundamentals in CMOS circuit design, device physics and memory operation. Experience with SPICE-based simulation and parasitic extraction. </

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 43 years, Micron Technology has delivered world‑leading memory and semiconductor solutions. As an HBM Memory Design Engineer on the HBM Architecture Team, you will design, simulate, optimize, and floorplan advanced DRAM circuits for next‑generation High Bandwidth Memory products. You will work across digital, analog, and mixed-signal domains to ensure functional correctness, performance, and power efficiency. Your role includes collaborating with globally distributed teams developing modern HBM solutions for AI and ML applications. Responsibilities • Design, simulate, and optimize DRAM memory arrays, data paths, ECC, command/control logic, and high‑speed interface circuits • Evaluate block‑level and full‑chip functionality and propose solutions to ensure functional correctness • Analyze timing, area, power, and complexity trade‑offs in high‑speed DRAM and mixed‑signal designs • Perform pathfinding and feasibility studies for new architectures and future HBM products • Contribute to the design, layout, and optimization of memory, logic, and analog circuits • Support large‑scale verification, debug, and silicon validation activities • Collaborate across multi-functional teams involved in TSV‑based 3D stacking and vertical integration • Participate in design reviews and drive continuous improvement of design methodologies Minimum Qualifications • BSEE with 7&#43; years or MSEE with 5&#43; years of relevant engineering experience • Strong knowledge of