Hbm Mrda Shift Process Engineer Jobs

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 45 years, Micron Technology, Inc. has been at the forefront of innovation, delivering the world’s most advanced memory and semiconductor technologies. Our distributed team of engineers, scientists, and visionaries is developing groundbreaking solutions that redefine how the world uses information to enrich life for all. We are seeking a Layout Design Engineering Manager to join Micron’s High Bandwidth Memory (HBM) organization in Guadalajara, Mexico. In this leadership role, you will guide a distributed team focused on developing complex analog, mixed‑signal, and custom layouts powering next‑generation AI and high‑performance computing solutions. Responsibilities Manage a team responsible for crafting and developing critical layouts for analog circuits, mixed-signal components, and custom blocks, including support for full-chip-level integration. Oversee layout verification activities, including LVS, DRC, Antenna checks, documentation, and quality reviews. Ensure timely and high‑quality delivery of block‑level layouts that meet all project requirements. Coordinate planning, area/time estimation, scheduling, task delegation, and execution for multiple concurrent projects. Mentor and guide layout engineers of all levels. Perform detailed reviews of sub‑block‑level layouts. Collaborate with global engineering teams to drive successful project execution and alignment across Micron’s worldwide footprint. </

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 43 years, Micron Technology has delivered world‑leading memory and semiconductor solutions. As an HBM Memory Design Engineer on the HBM Architecture Team, you will design, simulate, optimize, and floorplan advanced DRAM circuits for next‑generation High Bandwidth Memory products. You will work across digital, analog, and mixed-signal domains to ensure functional correctness, performance, and power efficiency. Your role includes collaborating with globally distributed teams developing modern HBM solutions for AI and ML applications. Responsibilities • Design, simulate, and optimize DRAM memory arrays, data paths, ECC, command/control logic, and high‑speed interface circuits • Evaluate block‑level and full‑chip functionality and propose solutions to ensure functional correctness • Analyze timing, area, power, and complexity trade‑offs in high‑speed DRAM and mixed‑signal designs • Perform pathfinding and feasibility studies for new architectures and future HBM products • Contribute to the design, layout, and optimization of memory, logic, and analog circuits • Support large‑scale verification, debug, and silicon validation activities • Collaborate across multi-functional teams involved in TSV‑based 3D stacking and vertical integration • Participate in design reviews and drive continuous improvement of design methodologies Minimum Qualifications • BSEE with 7&#43; years or MSEE with 5&#43; years of relevant engineering experience • Strong knowledge of

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As an HBM Memory Design Engineer in Micron’s HBM Architecture Team, you will design, simulate, analyze, and floorplan digital and analog DRAM circuits used in advanced HBM technology. You will evaluate block-level and full-chip functionality, perform architectural pathfinding, and contribute to the development of next‑generation high‑bandwidth DRAM solutions. This role works across diverse engineering teams to deliver functionally accurate, low‑power, and high‑performance HBM products by bringing to bear 3D stacking and TSV-based integration. Responsibilities • Design, simulate, and optimize digital and analog DRAM circuits including data path, ECC, command/control, and high‑speed timing structures • Evaluate full‑chip and block‑level functionality and propose solutions to achieve correct circuit and system behavior • Perform timing, area, power, and complexity analysis for high‑speed DRAM and mixed‑signal circuits • Conduct pathfinding studies and feasibility analyses for future HBM architectures • Contribute to the development, layout, and optimization of memory, logic, and analog circuits • Analyze circuit behavior under varying PVT and parasitic conditions to ensure robust operation • Collaborate with multi-functional teams across build, verification, product engineering, process, and packaging • Support design reviews, documentation, and continuous improvement of design methodologies Minimum Qualifications • BSEE with 7&#43; years, or MSEE with 5&#43; years of releva

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of Micron’s HBM design organization, building the test architectures that enable the most advanced memory products in the world. Our team works at the intersection of design, manufacturing, and silicon learning to make 3D‑stacked memory reliable at scale. We thrive on deep technical challenges and close collaboration across disciplines! As an HBM Design Architect, you will define how next‑generation HBM products are tested from wafer to system. This role is critical to ensuring quality, yield, and performance across complex multi‑die architectures. You’ll influence product success early, work hands-on with silicon, and partner closely with design, test, and manufacturing teams. Responsibilities: Define and implement end-to-end DFT architectures for HBM base die and DRAM die Develop DFT strategies for stacked-die, cube-level, and system-level test flows Architect test access mechanisms supporting wafer probe through final test Enable silicon observability for yield learning, debug, and failure analysis Collaborate across design, verification, layout, test, and manufacturing teams Minimum Qualifications: Bachelor’s or Master’s degree in Electrical Engineering, Computer Engineering, or related field Strong knowledge of scan, MBIST, JTAG, and boundary scan concepts Experience with wafer probe and fin

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 43 years, Micron Technology, Inc. has advanced the world’s most innovative memory and semiconductor technologies. As an HBM Memory Design Engineer within the HBM Architecture Team, you will design, simulate, and optimize digital and analog DRAM circuits for next‑generation high‑bandwidth memory products. You will evaluate block‑level and full‑chip functionality, solve complex challenges in building, and collaborate with a distributed team to deliver highly reliable, industry‑leading HBM solutions. This role provides the opportunity to contribute to groundbreaking DRAM design, TSV‑based 3D integration, and high‑speed mixed‑signal architectures supporting Machine Learning and AI applications. Responsibilities Design and analyze digital, analog, and mixed‑signal circuits for HBM DRAM products. Perform schematic entry, simulation, and optimization of DRAM blocks including data path, ECC, command control, and clocking circuits. Evaluate full‑chip and block‑level functionality and deliver solutions ensuring functional accuracy. Conduct pathfinding and feasibility studies for next‑generation HBM architectures. Optimize circuit timing, area, power, and complexity across high‑speed DRAM designs. Support design floor planning, layout reviews, and cross‑domain integration of memory, logic, and analog circuits. Collaborate with global engineering teams to drive innovation and support vertical integration across design

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Member of Technical Staff HBM Design Architect, you will be responsible for design and development of high-speed interface between DRAM and Base die in HBM cube! This includes designing the DRAM command and control logic, as well serializing and de-serializing scheme. You will collaborate with a highly creative and motivated development team applying brand-new memory technologies to build groundbreaking HBM products! Responsibilities: Responsible for the high-speed DRAM and Base die interface in HBM cube. Design the DRAM command and control logic, as well as serializing and de-serializing scheme at the interface. Conduct circuit simulations using standard industry simulators such as FINESIM, HSPICE and VERILOG Collaborate with data path design on floor planning and full chip testbench. Analyze timing/area/power in high-speed DRAM or mixed-signal design. Contribute to the development of new HBM product opportunities by assisting with the overall design, layout, and optimization of Memory, Logic, and Analog circuits. Qualifications: Extensive experience with DRAM operation and JEDEC specifications across DDR, LPDDR, GDDR, and HBM product families. Strong technical expertise in analog and mixed-signal circuit design. Hands-on proficiency in DRAM command decoding, bank logic, and RAS/CAS chain design. Demonstrated innovation and problem‑solving capabilities in

ENGINEER - HBM VERIFICATION — Jalisco, Mexico. Apply via Workday.

Staff HBM Design Architect — 2 Locations. Apply via Workday.

Probe HBM application integration engineer — Taichung - TCP, Taiwan. Apply via Workday.

MTB HBM Assembly Equipment Manager — Taichung - MTB, Taiwan. Apply via Workday.

Intern - HBM SoC RTL Design Engineer — Folsom, CA. Apply via Workday.

TCP HBM production technician — Taichung - TCP, Taiwan. Apply via Workday.

MTB HBM Manufacturing Engineer — Taichung - MTB, Taiwan. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Join a team at Micron where you will have the chance to own verification and end-to-end analysis of complex full-chip custom builds. Our advanced low-power and power management technologies span multiple categories, including high-speed memories. Collaborate closely with global development and verification team members, many of whom have decades of experience in memory engineering. This role will also offer cross-functional tasks that can broaden your abilities. Responsibilities Lead and define the approach for the verification activities within your areas of expertise in any project the team engages in. Provide verification support to build projects by simulating, analyzing, and debugging pre-silicon full-chip builds. Design test cases/stimuli aimed at broadening the functional coverage for HBM emerging memory architectures and features. Take part in the development of verification methodology and environments for advanced HBM and emerging memory products. Collaborate with international colleagues on building new verification flows to address challenges in HBM and emerging memory development. Develop and maintain test benches and test vectors using simulation tools and run regressions for coverage analysis and improvements. Apply AI for automation of technical and non-technical processes. Minimum Qualifications More than 5 years of experience in pre-silicon verification. BE or MTech in Electronics Engineering or related field.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The High-Performance Integrated Group (HIG) is a division within the Technology and Products Group (TPG). We are dedicated to developing and optimizing High Bandwidth Memory (HBM) solutions for AI and ML applications! Our ultimate goal is to deliver the lowest power per bit solutions in the industry! Position Overview: We are searching for an HBM IO Design Architecture Engineer. This role will focus on HBM IO / TSV IO design and analysis including electrical modeling, Signal Integrity (SI) and Power Integrity (PI) analysis, and design optimization across the HBM development cycle. The ideal candidate brings hands-on experience in design execution, simulation to silicon correlation, and cross-functional methodology development, and embraces AI-driven analysis and data-driven decision making to accelerate quality improvement cycles. Responsibilities will include, but are not limited to: High-speed IO design architecture for HBM products Define and standardize IO design quality process from architecture to silicon Define IO architecture, TSV IO performance targets, and design quality requirements for future HBM products. Develop IO and TSV modeling methodologies to support architecture tradeoff analysis, SI/PI evaluation, and design optimization. Drive simulation-to-silicon correlation and post-silicon learning feedback to improve design quality across HBM product generations. Leverage AI Assisted analytics to accelerate root cause identification from comp