Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Join Micron’s Design Engineering team and help drive the future of memory innovation. This team develops groundbreaking digital, analog, and mixed-signal circuitry that powers advanced memory solutions. You will collaborate with global teams across design, verification, process, and product engineering to deliver high-quality, scalable technologies that transform how the world uses information. As a Memory Design Engineer specializing in HBM, you will contribute to the design, optimization, and validation of memory, logic, and analog circuits. You will partner closely with multi-functional engineering and manufacturing teams to support product development and ensure robust, efficient, and manufacturable solutions. Key Responsibilities Design, layout, and optimize memory, logic, and analog circuits for HBM products Perform parasitic modeling, validation, reticle experiments, and support tape-out revisions Complete layout processes including floor planning, placement, and routing Conduct circuit verification using industry-standard modeling and simulation tools Collaborate with multi-functional teams (design, verification, process, product engineering) to ensure manufacturability and product success Use AI supported design and simulation tools to enhance circuit modeling accuracy, improve design efficiency, and accelerate development cycles Minimum Qualifications Bachelor’s or Master’s degree in Electrical Engineering, Computer Engineerin
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Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. department Introduction The Non-Volatile NAND Design Engineering group is responsible for the design and optimization of analog, digital and mixed-signal circuits enabling advanced NAND Flash memory products. Close collaboration with cross-functional teams ensures scalable, manufacturable, and reliable solutions across technology nodes. Position Overview As a Design Engineer in the NVE Design Engineering Core group at Micron Semiconductor Italia, you will contribute to the development of memory products that are best-in-class, using your specialized knowledge and Micron proprietary methods of designing and analyzing core and mixed circuits used in the development of memory products. Responsibilities Responsibilities include, but not limited to: • Design, simulate, and optimize NAND core circuit blocks, balancing performance, power, area, and reliability trade-offs. • Translate product and system requirements into circuit implementations, evaluating feasibility and functionality across use cases. • Perform comprehensive circuit verification (DC, AC, transient, noise, Monte Carlo, PVT corners) at block and chip level. • Collaborate with multi-functional teams to improve power efficiency, manufacturability, and overall product performance. • Develop and leverage automation solutions (e.g., Python-based workflows, AI-assisted tools) and maintain user documentation. AI Enablement and Productivity The candidate is expected to leverage AI-powered tools and data-driven methodologies to improve engineering producti
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. department Introduction The Non-Volatile NAND Design Engineering group is responsible for the design and optimization of analog, digital and mixed-signal circuits enabling advanced NAND Flash memory products. Close collaboration with cross-functional teams ensures scalable, manufacturable, and reliable solutions across technology nodes. Position Overview As a Design Engineer in the NVE Design Engineering Core group at Micron Semiconductor Italia, you will contribute to the development of memory products that are best-in-class, using your specialized knowledge and Micron proprietary methods of designing and analyzing core and mixed circuits used in the development of memory products. Responsibilities Responsibilities include, but not limited to: • Design, simulate, and optimize NAND core circuit blocks, balancing performance, power, area, and reliability trade-offs. • Translate product and system requirements into circuit implementations, evaluating feasibility and functionality across use cases. • Perform comprehensive circuit verification (DC, AC, transient, noise, Monte Carlo, PVT corners) at block and chip level. • Collaborate with multi-functional teams to improve power efficiency, manufacturability, and overall product performance. • Develop and leverage automation solutions (e.g., Python-based workflows, AI-assisted tools) and maintain user documentation. AI Enablement and Productivity The candidate is expected to leverage AI-powered tools and data-driven methodologies to improve engineering prod
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 45 years, Micron Technology has driven innovation through industry-leading memory and semiconductor solutions. The Design Engineering organization develops advanced silicon-to-systems technologies by bringing together global, diverse teams that foster collaboration, technical excellence, and continuous innovation. As a Design Engineer, you will contribute to the design, simulation, optimization, and validation of memory products across the full product lifecycle. This role partners closely with global design, verification, product engineering, test, process integration, assembly, and marketing teams to deliver high-quality, manufacturable solutions that optimize performance, reliability, cost, and time-to-market. Responsibilities Design, simulate, and optimize digital and analog memory circuits, including memory arrays, control logic, address decoding, datapaths, and internal test circuitry. Perform circuit analysis and debug using industry-standard tools such as SPICE and Verilog, evaluating power, performance, area, and reliability tradeoffs. Analyze layout parasitics, support design rule optimization, and translate device specifications into robust die-level circuit functionality across operating conditions. Support test chip planning, silicon validation, characterization, and lab correlation activities to ensure successful product development. Collaborate with multi-functional teams and leverage Artificial Intelligence and AI-Assisted technologies to identify design improvem
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron, our vision is to transform how the world uses information to enrich life for all. As a global leader in memory and storage innovation, Micron develops technologies that accelerate the transformation of information into intelligence. The DRAM Engineering Group (DEG) creates advanced memory solutions that enable modern applications, including artificial intelligence, high-performance computing, and immersive user experiences. Our team fosters innovation, collaboration, integrity, and continuous learning while solving some of the industry’s most complex engineering challenges. The Semiconductor Design Engineer will contribute to the design, simulation, optimization, and validation of digital and analog CMOS circuits for advanced DRAM and emerging memory technologies. This role provides opportunities to work across the full product lifecycle, from early technology development through product qualification, while collaborating with global design, verification, and manufacturing teams. The successful candidate will develop technical expertise in memory design, circuit analysis, and design automation while supporting the delivery of high-quality products. Responsibilities Design, simulate, analyze, and optimize CMOS memory circuits and functional blocks, including memory arrays, control logic, datapaths, address decoding, and input/output interfaces. Support physical design activities such as floor planning, placement, routing optimization, layout verification, and manufacturability improvements.
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Summary Department Introduction: The Systems Integration Group (SIG) develops advanced test solutions that support semiconductor manufacturing and product quality. The team partners across engineering, operations, procurement, and external suppliers to design, build, and deploy innovative hardware platforms that enable reliable testing and validation of semiconductor devices. Position Overview: As an Electrical Design Engineer, you will design and develop electronic hardware used in advanced semiconductor test systems. You will apply electrical engineering principles to create analog, power, and mixed-signal solutions that support manufacturing and product development. This role spans the full hardware development lifecycle, from concept and design through validation, deployment, and sustaining support. You will collaborate with cross-functional teams around the world to deliver reliable, high-quality test solutions. Responsibilities Design analog, power, and mixed-signal electronic circuits from concept through implementation and validation Evaluate and select electronic components to meet system performance, reliability, and cost objectives Develop schematics and collaborate with PCB designers to create optimized board layouts Perform circuit simulation, analysis, and design verification using industry-standard tools Debug, test, and validate PCB assemblies using laboratory equipment such as oscilloscopes, power supplies, and electronic loads Create a
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As an HBM Memory Design Engineer in Micron’s HBM Architecture Team, you will design, simulate, analyze, and floorplan digital and analog DRAM circuits used in advanced HBM technology. You will evaluate block-level and full-chip functionality, perform architectural pathfinding, and contribute to the development of next‑generation high‑bandwidth DRAM solutions. This role works across diverse engineering teams to deliver functionally accurate, low‑power, and high‑performance HBM products by bringing to bear 3D stacking and TSV-based integration. Responsibilities • Design, simulate, and optimize digital and analog DRAM circuits including data path, ECC, command/control, and high‑speed timing structures • Evaluate full‑chip and block‑level functionality and propose solutions to achieve correct circuit and system behavior • Perform timing, area, power, and complexity analysis for high‑speed DRAM and mixed‑signal circuits • Conduct pathfinding studies and feasibility analyses for future HBM architectures • Contribute to the development, layout, and optimization of memory, logic, and analog circuits • Analyze circuit behavior under varying PVT and parasitic conditions to ensure robust operation • Collaborate with multi-functional teams across build, verification, product engineering, process, and packaging • Support design reviews, documentation, and continuous improvement of design methodologies Minimum Qualifications • BSEE with 7+ years, or MSEE with 5+ years of releva
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 43 years, Micron Technology, Inc. has advanced the world’s most innovative memory and semiconductor technologies. As an HBM Memory Design Engineer within the HBM Architecture Team, you will design, simulate, and optimize digital and analog DRAM circuits for next‑generation high‑bandwidth memory products. You will evaluate block‑level and full‑chip functionality, solve complex challenges in building, and collaborate with a distributed team to deliver highly reliable, industry‑leading HBM solutions. This role provides the opportunity to contribute to groundbreaking DRAM design, TSV‑based 3D integration, and high‑speed mixed‑signal architectures supporting Machine Learning and AI applications. Responsibilities Design and analyze digital, analog, and mixed‑signal circuits for HBM DRAM products. Perform schematic entry, simulation, and optimization of DRAM blocks including data path, ECC, command control, and clocking circuits. Evaluate full‑chip and block‑level functionality and deliver solutions ensuring functional accuracy. Conduct pathfinding and feasibility studies for next‑generation HBM architectures. Optimize circuit timing, area, power, and complexity across high‑speed DRAM designs. Support design floor planning, layout reviews, and cross‑domain integration of memory, logic, and analog circuits. Collaborate with global engineering teams to drive innovation and support vertical integration across design
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities will include, but are not limited to: • Own and deliver critical HBM IO blocks and subsystems from architectural definition through circuit and RTL implementation, verification, tape-out, silicon bring-up, and post-silicon debug, including interfaces supporting future CPO systems. • Define HBM PHY, controller-to-PHY, die-to-die, clocking, training, calibration, power-management, error-handling, and test requirements for advanced heterogeneous systems. • Drive robust, high-performance builds by balancing bandwidth, latency, power, area, reliability, electrical signal quality, power stability, yield, and manufacturability trade-offs. • Lead architecture and design of analog, mixed-signal, and digital interface functions used in high-speed memory subsystems. • Partner with package, interposer, physical design, signal integrity, power integrity, and thermal teams to optimize interface implementation across 2.5D and 3D systems. • Lead root-cause analysis and resolution of complex pre-silicon and post-silicon issues across circuit design, RTL, architecture, process, package, interposer, and system interactions. • Serve as technical project lead for one or more advanced interface programs, coordinating execution across architecture, design, layout, verification, validation, packaging, test, and product engineering teams. • Define and communicate technical priorities, interface specifications, execution plans, risks, dependencies, and schedule impacts. • Work with internal teams, customers, IP pr
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. This role combines advanced DRAM circuit design with technology development, silicon learning, and yield improvement. We work across Design, Technology Development, Product Engineering, Test, Reliability, Quality, Manufacturing, and other teams to solve challenging memory-design problems and enable future technology generations In this position, you will contribute to the design and optimization of critical DRAM circuitry, including Sense Amplifiers, timing distribution, calibration, and training features. You will influence designs from early process-node development through silicon bring-up and production ramp, using simulation, silicon data, statistical analysis, and automation to improve performance, robustness, yield, and manufacturability Responsibilities: Design, analyze, verify, and optimize memory, logic, and analog circuits, including Sense Amplifiers, timing distribution, calibration, and training features Identify design marginalities and develop circuit- or architecture-level solutions that improve DRAM robustness, performance, scalability, and yield Support new process-node development, qualification, silicon bring-up, yield learning, and production ramp through modeling, simulation, silicon experiments, electrical failure analysis, and statistical analysis Guide layout, parasitic extraction, and modeling activities for Sense Amplifiers and Wordline drivers, including floor planning, placement, routing, signal-margin optimization, and memory-bit interaction Lead technical investigati
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. For more than 47 years, Micron Technology, Inc. has redefined innovation with the world’s most advanced memory and semiconductor technologies. We’re an international team of visionaries and scientists, developing groundbreaking technologies that are transforming how the world uses information to enrich life for all. Become an Engineer CAD at Micron Technology in Guadalajara. Chip in to innovative memory designs impacting HBM, DRAM, and new technologies. Responsibilities: Provide day-to-day support for CAD tools, flows, and collateral, ensuring they meet the needs of HBM design teams at the Guadalajara Design Center. Collaborate closely with HBM design, layout, and verification methodology teams to propose and co-develop sophisticated capabilities, ensuring the deployment of outstanding practices and methodologies. Support all aspects of mixed-signal, transistor-level custom IC design, including logical design, custom layout, parameterized cells, automated place and route tools, physical design verification, ERC, Layout Parasitic Extraction, pre and post layout netlisting and simulation, digital and analog circuit simulation, timing and power analysis, reliability simulation and analysis, tape out, and mask generation. Minimum Qualifications: Bachelor’s or preferably a Master’s/PhD in Computer Engineering, Computer Science, or Electrical Engineering. 5+ years of direct CAD or Design experience in mixed-signal, custom IC design flows. Proven experience w
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Contribute to the development of new product opportunities by assisting with the overall design, layout, and optimization of DRAM Memory array/Peripheral Logic/Analog circuits Actively leverage AI‑based tools, agentic workflows, and automation frameworks to: Accelerate schematic optimization and design‑space exploration Assist in parasitic analysis, sensitivity studies, and corner coverage Improve debug efficiency across simulation and silicon learning loops Define semicustom methodology for memory design Collaborate with CAD, EDA, and software teams to integrate AI‑driven flows into simulation, verification, and design sign‑off environments. Oversee and manage the layout process including floor-planning, placement, and routing Perform circuit-level verification including functional, timing, power and reliability analysis using industry standard and Micron-specific simulators and tools. Contribute to cross-group communication to work towards standardization and group success Drive innovation into the future memory generations and design methodology within a dynamic work environment Minimum Qualifications Master’s degree in electrical or computer engineering with 15+ years of experience in vlsi design. Strong fundamentals in CMOS circuit design, device physics and memory operation. Proven lea
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Key Responsibilities Design layout for leaf cells, standard cells (Stdcell), or sub-blocks. Apply a systematic, meticulous, and methodical approach to IC layout design. Interpret DRC/LVS and other physical verification checks to ensure design accuracy. Demonstrate ownership and proactively plan work to meet project timelines. Collaborate effectively with internal teams to ensure successful layout project execution. Minimum Qualifications Bachelor’s, Master’s, or PhD in Electronics, Mechatronics, Robotics Engineering, Nanotechnology, or related fields. Graduation within the last 2 years (Bachelor’s, Master’s, or PhD). Strong knowledge of electronic circuit concepts. Experience using circuit simulation and design tools. Effective interpersonal and problem-solving skills. English communication skills (conversational level required). Self-motivated, enthusiastic, and collaborative standout colleague. Passion for technology and willingness to grow in the semiconductor industry. Preferred Qualifications Internship or academic project experience in pre-silicon circuit design. Understanding of pre-silicon development areas such as analog circuits and physical design. Basic knowledge of MOS concepts, semiconductor fabrication, and analog layout fundamentals. Strong interpersonal skills and goal-oriented perspective. Experience with programming or script
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Description For more than 47 years, Micron Technology, Inc. has redefined innovation with the world’s most advanced memory and semiconductor technologies. We’re an international team of visionaries and scientists, developing groundbreaking technologies that are transforming how the world uses information to enrich life for all. Become an Engineer CAD at Micron Technology in Guadalajara. Contribute to innovative memory designs impacting HBM, DRAM, and new technologies. Responsibilities: Provide day-to-day support for CAD tools, flows, and collateral, ensuring they meet the needs of HBM design teams at the Guadalajara Design Center. Collaborate closely with HBM design, layout, and verification methodology teams to propose and co-develop advanced capabilities, ensuring the deployment of outstanding practices and methodologies. Support all aspects of mixed-signal, transistor-level custom IC design, including logical design, custom layout, parameterized cells, automated place and route tools, physical design verification, ERC, Layout Parasitic Extraction, pre and post layout netlisting and simulation, digital and analog circuit simulation, timing and power analysis, reliability simulation and analysis, tape out, and mask generation. applying Artificial Intelligence Minimum Qualifications: Bachelor’s or preferably a Master’s/PhD in Computer Engineering, Computer Science, or Electrical Engineering. 5+ years of direct CAD or Design experience in mixed
Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in neural networks possible. We do it all while committing to integrity, sustainability, and giving back to our communities. Because doing so can fuel the very innovation we are pursuing. Scope of project: Analyze NAND defectivity(DPM) pareto to enable qualification of world class end products (Mobile, Consumer SSD, Enterprise SSD) Perform electrical failure analysis(EFA) to solve technical problems using lab tools and techniques Exposure to DPM counter measures in the form of stresses/screens by exercising Digital and Analog Circuit, Device Physics, Process Engineering knowledge Drive Physical Failure Analysis (PFA) and Root Cause Analysis. Integrates AI-assisted tools and insights into daily work to improve efficiency, quality, or effectiveness, exercising sound judgment and complying with organizational standards and legal requirements. Contributes to a culture of continuous improvement by identifying, testing, and sharing AI-enabled enhancements within one’s scope of work. Minimum Qualifications: Master's Degree in Electrical Engineering OR Bachelor's Degree in Electrical Engineering Understanding of NAND Flash Device Physics, Memory Design and fundamental Semiconductor processing is an added advantage. Knowledge of Programming Languages such as Python/C/C++ Effective communication skills in written and spoken English Good multitasking skills and ability to
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