Dram Systems Architecture Jobs

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a PYE Engineer, you will work on the Product Yield Enhancement Failure Analysis team to support legacy DRAM products throughout their manufacturing lifecycle. You will focus on yield improvement, product reliability, and component failure analysis to identify and resolve issues, enable stable production, and support quality requirements for industrial and automotive customers. Your responsibilities will require using electrical and physical characterization techniques combined with AI supported workflows and statistical data analysis to identify failures related to fabrication and assembly process, as well as testing marginalities. You will be responsible for communicating and coordinating component-level improvement activities with Product, Process, Quality and Test Engineering teams. Job Duties Perform electrical failure analysis to understand failure mechanisms Identify causes of component failures through statistical data analysis Work closely with cross-functional engineering teams to resolve fabrication and assembly process defect related issues and test flow marginalities Use statistical data analysis, data visualization, and AI tools to identify trends, accelerate root cause investigations, and improve component performance Communicate findings clearly through written reports and presentations Minimum Qualifications: At least a bachelor’s degree in Electrical or Computer Engineering, Physics, or Materials S

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of a pathfinding organization focused on developing the technologies that will enable the next generation of memory solutions. Our team brings together engineers, scientists, and innovators working at the forefront of semiconductor research and development to solve sophisticated scaling, performance, and power challenges for future memory products. In this role, you will help develop the future of advanced memory technology by driving the development of first in industry Advanced DRAM solutions! You will collaborate across process integration, device engineering, materials science, characterization, and reliability teams to transform innovative concepts into silicon and deliver breakthrough memory architectures. Responsibilities: Lead process integration efforts for Advanced DRAM technologies, including charge storage devices, thin-film transistors (TFTs), and related device components Develop and integrate new memory device architectures from concept through silicon implementation and productization Design and implement experiments to evaluate device performance, variability, reliability, and failure mechanisms Partner with cross-f

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our Data Center Business Unit (CDBU) is at the forefront of enabling next-generation server solutions that power AI and high-performance computing workloads. We work on ground breaking DRAM technologies that directly impact a significant portion of Micron’s revenue. Join a team that is crafting the future of data infrastructure and driving innovation in one of the fastest-growing technology segments! We are looking for a Principal Product Manager to lead DRAM product strategy and lifecycle management for data center applications. In this role, you will translate customer needs into product requirements, influence roadmap decisions, and partner closely with engineering, marketing, and customers to deliver high-impact solutions. This is a highly visible role where your expertise will shape product direction and help drive adoption across the server ecosystem. Responsibilities: Define and drive multi-year DRAM product strategy, roadmap, and lifecycle execution Translate customer and market needs into clear product requirements and value propositions Serve as the DRAM product expert with customers and industry partners Lead demand forecasting strategy, including competitive analysis and market modeling Identify and integrate high-value AI use cases into product planning and workflows Minimum Qualifications: Bachelor’s degree

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence. The 3D DRAM Technology Development organization is responsible for advancing next-generation memory technologies that enable future computing innovations. Engineers within this team work in a brand new 300mm R&D facility, collaborating across process development, characterization, reliability, design, and simulation fields to drive memory scaling and manufacturability. As a 3D DRAM Process Integration Engineer Intern, you will support the development of next-generation DRAM technologies with a focus on device performance, reliability, and manufacturability. This role involves working on advanced memory structures, including charge storage devices and thin-film transistors, while partnering with multi-functional engineering teams to solve challenging integration and circuit-related issues. The ideal candidate will have a strong foundation in semiconductor device fabrication, materials science, and device physics, combined with data-driven problem-solving skills and a passion for technology innovation. Responsibilities Contribute to the development of next-generation DRAM technologies, including advanced memory device components such as charge storage structures and thin-film transistors. Design, complete, and analyze experiments within the R&D fabrication environment to support technology development objectives. Collaborate with process

New College Grad - DRAM Design Engineer — Boise, ID - Main Site. Apply via Workday.

Intern - Advanced DRAM Cell/Device Engineer — Boise, ID - Main Site. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Key Responsibilities: Develop and standardize EMIR methodology that applies consistently across all DRAM products, ensuring alignment, repeatability, and high-quality analysis outcomes Perform static and dynamic EM/IR and PDN analysis using RedHawk or Totem or other industry‑standard tools; identify root‑cause issues such as high‑resistance segments, insufficient via density, and decap deficiencies, and provide clear, actionable recommendations to design and layout teams. Actively leverage AI‑based tools, agentic workflows, and automation frameworks for effective Power-delivery-network (PDN) analysis. Maintain a strong understanding of the full EMIR flow—from netlist preparation, extraction, simulation, and debug to reporting and silicon correlation—and ensure accurate evaluation across operating modes and temperatures. Partner across design, timing, physical implementation, architecture, modeling, and verification teams to understand real switching behavior, develop worst‑case vectors, and standardize analysis expectations across global teams. Collaborate with cross-geographical teams and also EDA tool vendors to evaluate and improve EMIR methodologies, and document Best Known Methods (BKMs) to enhance consistency and correlation across DRAM teams. Develop and maintain dashboards to track EMIR results, monitor trends, and support signoff progression for multiple designs. Qualifications: Master’s degree i

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Summary This team member will focus on performing semiconductor design engineering assignments including engineering and designing chip layout circuits, circuit checking, documenting specifications, and modifying and evaluating semiconductor devices and components. Typically responsible for projects, or portions of projects, to design, fabricate, optimize, and validate memory circuit solutions while supporting advanced semiconductor technology development. Responsibilities Design, layout, and optimize memory circuits with a focus on performance, power, area, and manufacturability. Perform circuit simulation and analysis using industry-standard tools such as SPICE and Verilog to validate circuit functionality. Develop and support schematic blocks including memory arrays, control logic, address decoders, datapaths, and internal test circuitry. Evaluate design architecture tradeoffs and incorporate layout parasitics to ensure robust circuit operation and silicon success. Drive innovation through test chip development, silicon validation, and AI-enabled improvements to design methodologies and workflows. Minimum Qualifications Bachelor’s degree in Electrical Engineering (BSEE) or higher, or equivalent experience. Basic understanding of memory array architectures, circuits, and operation. Strong understanding of circuit simulation setup, analysis, and debug techniques. Strong written and verbal communication skills with the ability to convey technical concepts

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are the DRAM Technology Development team at Micron, pushing the limits of memory scaling and performance. Our work spans cutting-edge lithography and tight collaboration across integration, etch, deposition, and CMP to bring new nodes to life. If you enjoy solving complex patterning challenges on advanced tools including EUV we’d love to have you! In this role, you will lead photolithography process development for next-generation DRAM. You’ll own process modules, drive roadmap decisions, and translate concept to manufacturable solutions on pilot lines and into high-volume fabs. This is a hands-on, high-impact position working closely with cross-functional teams and equipment/material partners! Responsibilities: Develop and optimize photo processes to meet device physical and electrical requirements while reducing cost and variability Lead a lithography module; create manufacturing-friendly solutions across 365nm, 248nm, 193i, and EUV Partner with integration and unit process teams; drive vendor engagement for new materials and equipment solutions Analyze failures and process limits; perform root cause and DOE-based improvements Document plans, results, and drive transfer to production fabs Minimum Qualifications: Bachelor’s degree in engineering, physics, or related field and 7+ years of semiconductor experience, or MS/PhD with 6+ years in photolithography Deep knowledge of imaging

Metrology Engineer - DRAM — Boise, ID - Main Site. Apply via Workday.

New College Grad - DRAM Design Engineer — Boise, ID - Main Site. Apply via Workday.

Design Methodology – Senior / Staff DRAM Power Integrity Engineer — Hyderabad - Phoenix Aquila, India. Apply via Workday.

MTS Lead DRAM Device Engineer — Boise, ID - ID1. Apply via Workday.

Sr BEOL Engineer - DRAM Process Integration — Boise, ID - Main Site. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The DRAM Technology Node Development team is responsible for bringing next-generation DRAM products from concept to production by improving yield, validating new features, and driving product quality. The team collaborates across design, process integration, manufacturing, and test engineering to solve complex technical challenges and deliver innovative memory solutions that power the future of computing. As a Product Engineer Intern in the DRAM Technology Node Development group, you will work alongside experienced engineers to support the development of next-generation DRAM products. You will gain hands-on experience in product characterization, test development, yield analysis, and design validation while applying analytical and problem-solving skills to real-world engineering challenges. Responsibilities Support new DRAM product development through electrical characterization, test development, circuit analysis, and design validation activities. Analyze product, test, and yield data to identify performance issues and drive continuous improvement initiatives. Collaborate with process, design, manufacturing, and test engineering teams to investigate and resolve product and process-related issues. Develop and improve test methodologies, automation scripts, and data analysis tools to enhance product quality and testing efficiency. Apply engineering tools, statistical analysis techniques, and AI-enabled technologies to support product c