Dram Systems Architecture Jobs

DRAM Product Engineer - LPDDR Design for Test — Taichung - Fab 16, Taiwan. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Key Responsibilities Coordinate the P&L for the DRAM product line serving embedded markets. Define and carry out approaches to increase revenue and market share in Automotive, Industrial, and Consumer verticals while maintaining product line profitability. Develop positive relationships with engineering, technology development, and quality organizations to deliver outstanding products with differentiated features that surpass customer requirements. Establish effective financial and business analyses and processes to justify and approve next-generation products. Drive speedy resolution of customer issues seen during qualification and production. Define marketing strategies to drive demand creation while effectively handling supply, demand, and inventory. Define long-term DID and node longevity strategy for the product line. Define pricing strategies to meet product line objectives. Define and complete go-to-market plans for new products, including collateral, field training, and outbound messaging. Education & Ideal Experience Degree or equivalent experience in Electrical Engineering, Computer Science, or a related field and/or advanced education in business administration. 10+ years of progressive marketing leadership and industry experience. Extensive semiconductor experience with a deep understanding of DRAM and memory markets. Extensive background in developing and introducing products, combined with understanding of mark

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We’re building the next generation of DRAM technology and pushing what’s possible at the intersection of device physics and circuit design. Our team thrives on solving deep technical challenges and turning innovative ideas into high-performance, manufacturable memory solutions. If you’re excited about influencing future technology nodes and working on designs that ship at scale, you’ll feel right at home with us! As a Staff DRAM Design Engineer, you’ll play a critical role in shaping memory architectures and circuit innovations that directly impact product performance, power, and reliability. This is a hands-on design role where your expertise will drive key decisions from concept through silicon validation, while collaborating with cross-functional teams to deliver meaningful results. Responsibilities: Lead design and optimization of DRAM circuits including memory array, control logic, datapath, and test logic Perform and analyze circuit simulations using tools such as SPICE and Verilog Evaluate architectural trade-offs impacting power, performance, and die size Integrate layout parasitics into simulations and drive design for manufacturability Define validation strategies including test chip development and silicon bring-up Minimum Qualifications: Bachelor’s degree in Electrical Engineering or related field 5+ years of circuit design experience or product engineering experience Strong understanding of analog and digital circuit fu

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron’s vision is to transfer how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a process integration and device engineer Intern at Micron Technology, Inc., you will have opportunities to work with an industry leading team on cutting edge technologies to enable next generation DRAM in the manufacturing Fab, ramp up production yield and deliver high quality DRAM products to customers. You will be offered hands-on experience in semiconductor process integration, electrical data analysis, with exposure to advanced technology development, yield improvement, and cross-functional collaboration. Responsibilities Support integration of process modules across various DRAM module loops. Analyze electrical and inline data to identify yield detractors and process anomalies. Collaborate with cross-functional teams (YE, Device, PI, process et al) to drive continuous improvement. Document findings and present updates to engineering and leadership teams. Leveraging AI tool to improve problem solving efficiency and productivity Requirements: Strong knowledge of semiconductor devices is required. Advanced CMOS or capacitor knowledge is preferred. Basic Knowledge of mainstream memory such as DRAM, NAND, NOR et al. Knowledge of sta

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Job Description We develop advanced memory technologies that transform how the world uses information to enrich life for all. As a Design Engineer, you will craft and optimize digital, analog, and memory circuits while collaborating with global design and verification teams. You will build solutions that improve quality, reliability, manufacturability, and product performance while continuing to learn and innovate in a global engineering environment! Responsibilities Design, develop, and optimize memory, logic, and analog circuits for new memory products. Perform circuit validation, parasitic modeling, reticle experiments, and tape-out revisions to drive performance and manufacturing efficiency . Lead layout activities including floorplanning, placement, routing, verification, modeling, and simulation using industry-standard tools. Collaborate across Product Engineering, Test, Probe, Process Integration, Assembly, and Marketing to solve technical challenges and support successful product execution. Drive innovation in future memory technologies while building design quality and standardization across global engineering teams. Minimum Qualifications Bachelor’s degree or equivalent experience in Electrical Engineering, Electronic Engineering, or a related field, with 10+ years of relevant industry experience; or a master’s degree with 7+ years; or a Ph.D. with 5+ years of relevant industry experienc

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron has an opening for a Photolithography Engineer (Level 2 or 3) at our Boise, Idaho facility. This position is part of Micron’s Technology Development organization, where advanced ideas become manufacturable technologies. Our team works at the leading edge of memory innovation, partnering across design, integration, manufacturing, and equipment suppliers to enable the next generation of semiconductor devices. This is where curiosity, experimentation, and impact come together. As a Photolithography Engineer, you will play a key role in developing and integrating lithography processes that directly shape future memory technologies. You will work hands-on with tools, materials, layouts, and data, while leveraging Artificial Intelligence and other software, collaborating with global partners to move innovations from R&D into high-volume manufacturing. This role offers broad technical exposure and the opportunity to influence device performance, yield, and cost at scale. Responsibilities: Develop and integrate photolithography unit processes for advanced memory technologies Perform material evaluations, reticle, and layout development, OPC, overlay optimization, and process window analysis Drive yield improvement, failure analysis, and device performance optimization Partner with equipment vendors to evaluate tools and improve process capability Document processes, communicate results, and support technology transfer to manufacturing Leverage Artifi

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Design Technology Co-Optimization (DTCO) team works at the intersection of process technology, standard cell architecture, and design implementation to optimize power, performance, and area (PPA) for advanced memory products. The team collaborates closely with standard cell library, RTL, and physical design engineers to evaluate design tradeoffs and develop methodologies that improve silicon outcomes. As a DTCO Intern, you will gain hands-on experience assessing and optimizing PPA at the standard cell and logic block level. You will use industry-standard place-and-route tools and AI-enabled automation techniques to implement, benchmark, and optimize logic blocks while developing practical skills in physical design, timing closure, and design analysis. Responsibilities Implement standard cell logic blocks using industry-standard physical design tools, including floorplanning, placement, clock tree synthesis (CTS), routing, and optimization activities focused on PPA assessment. Analyze and benchmark power, performance, and area across standard cell libraries and logic block configurations, identifying opportunities for improvement. Perform static timing analysis (STA), investigate setup and hold timing violations, and support timing closure activities. Execute physical verification checks, including DRC, LVS, and IR-drop analysis, and assist with resolving design issues. Leverage Generative AI, AI Assistants, and Agentic AI solutions to automate data collection, reporting, comparison, and w

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The DRAM Design Rules team develops and maintains design rules, methodologies, and automation solutions that enable the successful design and manufacturing of advanced memory technologies. The team partners closely with Design, CAD, Process Integration, Verification, and Product Engineering organizations to ensure technology scalability, design quality, and manufacturing robustness. As a DRAM Design Rules Intern, you will contribute to design rule development, validation, automation, and design enablement activities for next-generation memory products. This role provides hands-on experience with semiconductor build methodologies, industry-standard EDA tools, AI Supported analytics, and multi-functional engineering collaboration while helping drive future memory technology innovation. Responsibilities Assist in the development, documentation, validation, and optimization of semiconductor design rules for advanced memory technologies. Support design enablement activities by developing methodologies, automation solutions, scripts, and workflows that improve design productivity, verification quality, and engineering efficiency. Perform design rule validation, verification, and analysis using industry-standard EDA tools, simulation environments, and AI Supported analytics frameworks. Collaborate with Design, CAD, Process Integration, Verification, and Product Engineering teams to evaluate technology features, process

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron's Design-Technology Co-Optimization (DTCO) team plays a critical role in bridging semiconductor device technology and circuit design to enable next-generation DRAM products. The team evaluates emerging technologies, develops methodologies for performance assessment, and contributes to early design enablement activities that influence product power, performance, and area (PPA). Through close collaboration with device, process, modeling, and design engineering teams, DTCO helps guide technology development decisions that shape future memory solutions. As a DTCO Intern, you will gain hands-on experience evaluating advanced DRAM technologies and assessing their impact on future product architectures. You will use industry-standard electronic design automation (EDA) tools, perform circuit simulations and benchmarking, and apply data analysis techniques to support technology development decisions. This position provides an opportunity to work alongside world-class engineers while developing technical skills in semiconductor technology, circuit design, and AI-enabled automation workflows. Responsibilities Evaluate emerging DRAM technologies and analyze their impact on future product architectures and design tradeoffs. Perform transistor-level simulations and circuit benchmarking using industry-standard EDA tools such as HSPICE and FineSim. Develop and utilize Claude AI-based automation workflows and data analysis processes to improve simulation efficiency and engineering productivity. <li

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron is a global leader in DRAM innovation, developing memory technologies that enable the next generation of computing, artificial intelligence, and data-driven applications. Within the Technology Development organization, the Process Integration team drives the development of future DRAM architectures by coordinating device, materials, and process innovations across multiple engineering fields. Team members work in a highly collaborative R&D environment to solve complex technical challenges and accelerate technology scaling. As a Process Integration Engineer Intern, you will contribute to the development of next-generation DRAM memory technologies through multi-functional collaboration involving process integration, device engineering, materials development, and process architecture. This role requires strong technical expertise, analytical problem-solving skills, and the ability to coordinate activities across multiple engineering organizations to achieve technology achievements and product objectives. Responsibilities Define technology achievements, design rules, structural requirements, and electrical specifications for next-generation DRAM technologies while supporting achievement of program targets and timelines. Collaborate with process development, simulation, process architecture, circuit design, and quality teams to ensure alignment with product and technology requirements. Develop and maintain documentation related to process integration plans, technical risks, issue resolution,

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron is a global leader in DRAM technology, driving innovation that enables the next generation of computing, artificial intelligence, and data-driven applications. The DRAM Technology Development organization focuses on advancing semiconductor manufacturing capabilities through collaborative research, process innovation, and technology scaling. Team members work across multiple engineering fields to develop breakthrough memory solutions that shape the future of the industry. As a Process Integration Engineer, you will contribute to the development of next-generation DRAM technologies by collaborating with process, materials, device, and design engineering teams. This role is responsible for coordinating module-related development activities, defining technical requirements, resolving complex integration challenges, and supporting the successful execution of technology development programs. The ideal candidate will possess strong semiconductor process integration knowledge and a passion for advancing future memory architectures within a fast-paced R&D environment. Responsibilities Define technology landmarks, design rules, structural and electrical specifications, and integration requirements for next-generation DRAM products. Collaborate with multi-functional teams including simulation, process development, process architecture, circuit design, and quality engineering to achieve technical objectives and project timelines. Lead module-related integration activities, identify techni

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are the R&D DRAM Device and Cell Technology Group at Micron, working at the heart of future memory scaling in an industry‑leading 300mm R&D facility. We explore new device concepts, push the limits of DRAM cell performance, and turn deep physics understanding into manufacturable technology. If you enjoy learning fast, solving hard problems, and collaborating across process areas, this team delivers! In this role, you will play a critical part in defining and validating future DRAM device and cell technologies. As a Device Engineer, you will characterize memory arrays, analyze electrical behavior and failures, and influence process and material decisions that directly impact yield, quality, and performance. Your work will shape the electrical foundation of next‑generation DRAM products. Responsibilities: Define and drive electrical specifications for DRAM, Advanced DRAM and emerging memory technologies, translating product requirements into device-level targets for performance, reliability and scaling Design, implement, and interpret experiments to optimize cell and access device performance. This includes running materials experiment, developing new integration schemes and defining new characterization methodologies Develop physical and electrical models (TCAD and compact modeling) to identify performance, yield and reliability limiters, using advanced materials characterization, device physics insight, and statistical data analysis Creat

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron’s DRAM Design Engineering Group (DDEG) is where innovation meets excellence. We are passionate about advancing memory and storage technologies through collaborative engineering and creative problem-solving. Our team works at the forefront of semiconductor design, developing groundbreaking solutions that shape the future of memory products in a dynamic, learning-focused environment. As a Design Engineer, you will play a key role in developing next-generation memory technologies by designing, analyzing, and optimizing digital and analog circuits. You will collaborate with global cross-functional teams throughout the product lifecycle, helping deliver high-quality, manufacturable memory solutions that meet performance, reliability, cost, and customer requirements. Responsibilities: Contribute to the design, layout, verification, and optimization of memory, logic, and analog circuits for new product development Perform parasitic modeling and support design validation, reticle experiments, and tape-out revisions Lead layout activities including floor planning, placement, and routing Partner with Product Engineering, Test, Probe, Assembly, Process Integration, and Marketing teams to ensure manufacturable product designs Collaborate with CAD, modeling, standards, and verification teams to improve design quality and execution Minimum Qualifications: Bachelor’s or Master’s degree in Electrical Engineering Minimum 4 years o

Intern - DRAM Process Integration — Boise, ID - Main Site. Apply via Workday.

Intern - DRAM IP Circuits Design Engineer — Boise, ID - Main Site. Apply via Workday.