Dram Technology Sr Layout Design Engineer Jobs

New College Grad - Design Engineer, DRAM Technology and Products — Boise, ID - Main Site. Apply via Workday.

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The DRAM Technology Node Development team is responsible for bringing next-generation DRAM products from concept to production by improving yield, validating new features, and driving product quality. The team collaborates across design, process integration, manufacturing, and test engineering to solve complex technical challenges and deliver innovative memory solutions that power the future of computing. As a Product Engineer Intern in the DRAM Technology Node Development group, you will work alongside experienced engineers to support the development of next-generation DRAM products. You will gain hands-on experience in product characterization, test development, yield analysis, and design validation while applying analytical and problem-solving skills to real-world engineering challenges. Responsibilities Support new DRAM product development through electrical characterization, test development, circuit analysis, and design validation activities. Analyze product, test, and yield data to identify performance issues and drive continuous improvement initiatives. Collaborate with process, design, manufacturing, and test engineering teams to investigate and resolve product and process-related issues. Develop and improve test methodologies, automation scripts, and data analysis tools to enhance product quality and testing efficiency. Apply engineering tools, statistical analysis techniques, and AI-enabled technologies to support product c

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Silicon-to-systems solutions that transform how the world uses information. With over 45 years of industry leadership, Micron’s teams work across technology development, product engineering, and systems design to deliver high-performance, high-reliability memory products. As a Design Engineer, you will contribute to the design and analysis of digital and analog circuits used in memory technologies. You will collaborate with global, multi-functional engineering teams to optimize product performance, manufacturability, cost, and time-to-market while supporting end-to-end product development and validation. Responsibilities Design, simulate, and optimize memory circuits, including layout development and verification using industry-standard tools (e.g., SPICE, Verilog) Develop schematic blocks such as memory arrays, control logic, datapaths, address decoders, and internal test logic Analyze design trade-offs across power, speed, die size, and manufacturability to improve overall product performance Collaborate with Product Engineering, Test, Process Integration, Assembly, and Marketing teams to ensure robust and scalable designs Apply AI-enabled tools and methodologies to improve circuit design efficiency, simulation accuracy, and overall design flow optimization Minimum Qualifications Bachelor’s degree in Electrical Engineering (BSEE) or higher Foundational understanding of memory architectures, circuit design, and semiconductor device behavior Experienc

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our vision is to transform how the world uses information to enrich life for all. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners. The solutions we build help make everything from virtual reality experiences to breakthroughs in artificial intelligence possible! We do it all while committing to integrity, sustainability, and giving back to our communities, because doing so can fuel the very innovation we are pursuing. As a process integration engineer in the DRAM organization, you will be part of a team of world-class engineers who are working in an industry leading 300mm R&D facility on technology which enables future memory scaling. You will focus on the performance and manufacturability of Micron’s cutting-edge next-generation memories. Areas of concentration will include integration and circuit issues specific to DRAM technology. In addition to a broad basis of process integration knowledge, this position will require a strong background in semiconductor device physics. Role interacts significantly with the process development, simulation, modeling, characterization, and reliability groups. Responsibilities include, but not limited to: Lead technology integration activities in enabling manufacturability of state-of-the-art DRAM technology Engage with numerous cross-functional teams including process development, product engineering, design, yield improvement, advanced mask and probe to arrive at solutions to

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We’re building the next generation of DRAM technology and pushing what’s possible at the intersection of device physics and circuit design. Our team thrives on solving deep technical challenges and turning innovative ideas into high-performance, manufacturable memory solutions. If you’re excited about influencing future technology nodes and working on designs that ship at scale, you’ll feel right at home with us! As a Staff/Principal DRAM Design Engineer, you’ll play a critical role in shaping memory architectures and circuit innovations that directly impact product performance, power, and reliability. This is a hands-on design role where your expertise will drive key decisions from concept through silicon validation, while collaborating with cross-functional teams to deliver meaningful results. Responsibilities: Lead design and optimization of DRAM circuits including memory array, control logic, datapath, and test logic Perform and analyze circuit simulations using tools such as SPICE and Verilog Evaluate architectural trade-offs impacting power, performance, and die size Integrate layout parasitics into simulations and drive design for manufacturability Define validation strategies including test chip development and silicon bring-up Minimum Qualifications: Bachelor’s degree in Electrical Engineering or related field 5+ years of circuit design experience or product engineering experience Strong understanding of analog and digital

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Process Integration Engineer working in the fast-paced DRAM R&D Memory Group, you will be instrumental in developing Micron's core memory technology critical for AI-enabled customers. The R&D development takes place in an industry-leading 300mm facility which is adjacent to our newly announced Manufacturing facility (currently under construction). Your focus will be on driving front-end process integration for future DRAM technology nodes, owning integration schemes, DOEs, and silicon learning from development through transfer to manufacturing. You will strengthen that work with device and process modeling, using simulation and device physics to build predictive insight, shorten learning cycles, and guide integration decisions. This is an integration role first; modeling is a tool you bring to it, not a standalone assignment. Responsibilities include, but not limited to: Own process integration for assigned DRAM FEOL modules: define integration schemes, drive unit process and module interactions, and deliver on technology node milestones. Design and execute DOEs on silicon, analyze inline, parametric, and yield data, and drive root cause to resolution. Apply device and process modeling (TCAD, Silvaco, Sentaurus, or comparable) to evaluate process interactions, device behavior, and scaling options, and to prioritize experiments before committing silicon. Correlate simulation results with experimental and silicon data to improve model accuracy and deepen process understanding.</li

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We’re building the next generation of DRAM technology and pushing what’s possible at the intersection of device physics and circuit design. Our team thrives on solving deep technical challenges and turning innovative ideas into high-performance, manufacturable memory solutions. If you’re excited about influencing future technology nodes and working on designs that ship at scale, you’ll feel right at home with us! As a Staff DRAM Design Engineer, you’ll play a critical role in shaping memory architectures and circuit innovations that directly impact product performance, power, and reliability. This is a hands-on design role where your expertise will drive key decisions from concept through silicon validation, while collaborating with cross-functional teams to deliver meaningful results. Responsibilities: Lead design and optimization of DRAM circuits including memory array, control logic, datapath, and test logic Perform and analyze circuit simulations using tools such as SPICE and Verilog Evaluate architectural trade-offs impacting power, performance, and die size Integrate layout parasitics into simulations and drive design for manufacturability Define validation strategies including test chip development and silicon bring-up Minimum Qualifications: Bachelor’s degree in Electrical Engineering or related field 5&#43; years of circuit design experience or product engineering experience Strong understanding of analog and digita

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron is a global leader in DRAM technology, driving innovation that enables the next generation of computing, artificial intelligence, and data-driven applications. The DRAM Technology Development organization focuses on advancing semiconductor manufacturing capabilities through collaborative research, process innovation, and technology scaling. Team members work across multiple engineering fields to develop breakthrough memory solutions that shape the future of the industry. As a Process Integration Engineer, you will contribute to the development of next-generation DRAM technologies by collaborating with process, materials, device, and design engineering teams. This role is responsible for coordinating module-related development activities, defining technical requirements, resolving complex integration challenges, and supporting the successful execution of technology development programs. The ideal candidate will possess strong semiconductor process integration knowledge and a passion for advancing future memory architectures within a fast-paced R&D environment. Responsibilities Define technology landmarks, design rules, structural and electrical specifications, and integration requirements for next-generation DRAM products. Collaborate with multi-functional teams including simulation, process development, process architecture, circuit design, and quality engineering to achieve technical objectives and project timelines. Lead module-related integration activities, identify techni

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. 【募集職種/Position Title】 Senior / Staff / Principal Process Development Engineer 【日本語】 MicronのDRAM Technology Development Process Development Teamは、MicronのDRAMおよびHBM (High Bandwidth Memory) 製品向けのプロセス技術、装置ソリューションを開発する、世界最高水準のエンジニアと技術専門家で構成された組織です。 当チームでは、先端DRAM、HBM、およびCMOS技術の開発を推進しており、リソグラフィ、CVD、ドライエッチ、ウェットプロセス、メタライゼーション、拡散、イオン注入、CMP、先端材料開発など、幅広いプロセス分野で経験豊富な人材を募集しています。 本ポジションでは、ユニットプロセス技術の探索、開発、最適化を担当し、プロセスインテグレーション、デバイス、設計エンジニアと連携しながら、装置メーカーや材料サプライヤーと協働して、次世代のDRAMおよびHBM向けの高性能かつコスト競争力のある技術開発を推進していただきます。 本ポジションでは、半導体プロセス開発、デバイス物理、CMOS技術に関する高度な知識が求められます。また、データ解析能力や材料分析、表面解析技術への理解も重要です。チームワークと高いコミュニケーション能力は、本職務で成功するための重要な要素となります。 歓迎する技術経験 以下の技術分野における実務経験をお持ちの方を歓迎します。 ・成膜技術 (CVD、ALD、PVD) ・エピタキシャル成長技術 (Si、SiGe、選択成長など) ・ゲートスタックおよび誘電体技術 ・先端パターニングおよびドライエッチ技術 ・ウェット洗浄および表面処理技術 ・イオン注入および熱処理技術 ・コンタクト形成、配線メタライゼーション技術 ・化学機械研磨技術 (CMP) ・ストレスエンジニアリングおよび先端材料統合技術 ・先端トランジスタ開発を含むロジック技術開発 ・メモリCMOSおよび周辺回路向けプロセスインテグレーション技術 主な職務内容 以下を含みますが、これらに限定されません。 ・デバイス、プロセスインテグレーション、および製品要求事項の理解 ・技術目標およびコスト目標達成に向けたプロセス技術ロードマップおよびサプライヤー戦略の策定 ・開発環境および量産環境におけるプロセスレシピの開発、最適化 ・構造解析、材料分析、および電気特性評価データの解析 ・デバイス性能、歩留まり、信頼性、およびコスト競争力向上に向けた技術革新の推進 ・AI&#xff08;人工知能&#xff09;を活用した開発業務の効率化、高度化の推進 ・社内関係部門および外部パートナーとの連携による複雑な技術課題の解決 ・技術戦略および開発方針に関する経営層への提言 ・エンジニアの育成、指導を通じた組織能力の向上 ・高い倫理観、オーナーシップ、および他者への敬意を持った業務遂行 応募資格&#xff08;必須&#xff09; ・電気工学、物理学、化学工

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. 【募集職種/Position Title】 Senior / Staff / Principal Process Development Engineer 【日本語】 MicronのDRAM Technology Development Process Development Teamは、MicronのDRAMおよびHBM (High Bandwidth Memory) 製品向けのプロセス技術、装置ソリューションを開発する、世界最高水準のエンジニアと技術専門家で構成された組織です。 当チームでは、先端DRAM、HBM、およびCMOS技術の開発を推進しており、リソグラフィ、CVD、ドライエッチ、ウェットプロセス、メタライゼーション、拡散、イオン注入、CMP、先端材料開発など、幅広いプロセス分野で経験豊富な人材を募集しています。 本ポジションでは、ユニットプロセス技術の探索、開発、最適化を担当し、プロセスインテグレーション、デバイス、設計エンジニアと連携しながら、装置メーカーや材料サプライヤーと協働して、次世代のDRAMおよびHBM向けの高性能かつコスト競争力のある技術開発を推進していただきます。 本ポジションでは、半導体プロセス開発、デバイス物理、CMOS技術に関する高度な知識が求められます。また、データ解析能力や材料分析、表面解析技術への理解も重要です。チームワークと高いコミュニケーション能力は、本職務で成功するための重要な要素となります。 歓迎する技術経験 以下の技術分野における実務経験をお持ちの方を歓迎します。 ・成膜技術 (CVD、ALD、PVD) ・エピタキシャル成長技術 (Si、SiGe、選択成長など) ・ゲートスタックおよび誘電体技術 ・先端パターニングおよびドライエッチ技術 ・ウェット洗浄および表面処理技術 ・イオン注入および熱処理技術 ・コンタクト形成、配線メタライゼーション技術 ・化学機械研磨技術 (CMP) ・ストレスエンジニアリングおよび先端材料統合技術 ・先端トランジスタ開発を含むロジック技術開発 ・メモリCMOSおよび周辺回路向けプロセスインテグレーション技術 主な職務内容 以下を含みますが、これらに限定されません。 ・デバイス、プロセスインテグレーション、および製品要求事項の理解 ・技術目標およびコスト目標達成に向けたプロセス技術ロードマップおよびサプライヤー戦略の策定 ・開発環境および量産環境におけるプロセスレシピの開発、最適化 ・構造解析、材料分析、および電気特性評価データの解析 ・デバイス性能、歩留まり、信頼性、およびコスト競争力向上に向けた技術革新の推進 ・AI&#xff08;人工知能&#xff09;を活用した開発業務の効率化、高度化の推進 ・社内関係部門および外部パートナーとの連携による複雑な技術課題の解決 ・技術戦略および開発方針に関する経営層への提言 ・エンジニアの育成、指導を通じた組織能力の向上 ・高い倫理観、オーナーシップ、および他者への敬意を持った業務遂行 応募資格&#xff08;必須&#xff09; ・電気工学、物理学、化学工

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Join an inclusive team passionate about one thing: using their expertise in the relentless pursuit of innovation for customers and partners! The solutions we build help make everything from virtual reality experiences to breakthroughs in artificial intelligence possible. We do it all while committing to integrity, sustainability, and giving back to our communities, because doing so can fuel the very innovation we are pursuing. As a process integration engineer in the 3D DRAM organization, you will join a team of world-class engineers who are working in an industry leading 300mm R&D facility on technology that enables the future of memory scaling. You will focus on performance and manufacturability of Micron’s cutting-edge next-generation memories. Areas of concentration will include integration and circuit issues specific to 3D DRAM technology. In addition to a broad basis of process integration knowledge, this position requires a strong background in materials science and semiconductor device physics, along with a creative mindset and effective project management. The role interacts significantly with process development, simulation, characterization, and reliability groups. Responsibilities: Contribute to technology development activities to enable next generation DRAM, working on device components such as charge storage devices and thin-film transistors, among others. Optimize process flows and develop creative solutions to meet product requirements. Engage numerous cross-functional te

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence. The 3D DRAM Technology Development organization is responsible for advancing next-generation memory technologies that enable future computing innovations. Engineers within this team work in a brand new 300mm R&D facility, collaborating across process development, characterization, reliability, design, and simulation fields to drive memory scaling and manufacturability. As a 3D DRAM Process Integration Engineer Intern, you will support the development of next-generation DRAM technologies with a focus on device performance, reliability, and manufacturability. This role involves working on advanced memory structures, including charge storage devices and thin-film transistors, while partnering with multi-functional engineering teams to solve challenging integration and circuit-related issues. The ideal candidate will have a strong foundation in semiconductor device fabrication, materials science, and device physics, combined with data-driven problem-solving skills and a passion for technology innovation. Responsibilities Contribute to the development of next-generation DRAM technologies, including advanced memory device components such as charge storage structures and thin-film transistors. Design, complete, and analyze experiments within the R&D fabrication environment to support technology development objectives. Collaborate with process

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are the DRAM Technology Development team at Micron, pushing the limits of memory scaling and performance. Our work spans cutting-edge lithography and tight collaboration across integration, etch, deposition, and CMP to bring new nodes to life. If you enjoy solving complex patterning challenges on advanced tools including EUV we’d love to have you! In this role, you will lead photolithography process development for next-generation DRAM. You’ll own process modules, drive roadmap decisions, and translate concept to manufacturable solutions on pilot lines and into high-volume fabs. This is a hands-on, high-impact position working closely with cross-functional teams and equipment/material partners! Responsibilities: Develop and optimize photo processes to meet device physical and electrical requirements while reducing cost and variability Lead a lithography module; create manufacturing-friendly solutions across 365nm, 248nm, 193i, and EUV Partner with integration and unit process teams; drive vendor engagement for new materials and equipment solutions Analyze failures and process limits; perform root cause and DOE-based improvements Document plans, results, and drive transfer to production fabs Minimum Qualifications: Bachelor’s degree in engineering, physics, or related field and 7&#43; years of semiconductor experience, or MS/PhD with 6&#43; years in photolithography Deep knowledge of imaging

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of Micron’s DRAM Technology Development organization, advancing dry etch technology for future memory generations. Our team works at the intersection of plasma science, device integration, and manufacturing, developing processes that directly influence performance, yield, and scalability. We collaborate closely across process areas to solve challenging technical problems and accelerate technology learning! As a DRAM Dry Etch Engineer, you will develop and optimize plasma etch processes that enable next-generation memory devices. You will work in a research and development environment, taking concepts from early development through manufacturing implementation. This role offers broad technical ownership, hands-on experimentation, and opportunities to shape future technology roadmaps. Responsibilities: Develop and optimize dry etch processes to meet structural and electrical requirements Collaborate with integration and process teams to solve complex device and process challenges Perform root cause analysis and drive yield, defect, and process improvements Analyze data to improve process capability, stability, and manufacturing readiness Support process transfer, project execution, and production issue resolution Minimum Qualifications: MS or PhD with 3–5 years of relevant experience, or BS with 5–10 years of semiconductor experience Experience in dry etch process dev

Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. 業務内容 次世代DRAM技術開発におけるプロセスインテグレーション業務を担当いただきます。 将来世代DRAMノード向けプロセス技術の開発および統合 キャパシタモジュールの設計、開発、最適化 複数のプロセスモジュールにまたがるインテグレーション業務 DOE&#xff08;実験計画法&#xff09;の設計・実行、およびデータ解析によるプロセス条件の最適化 歩留まりおよび品質に関する課題の特定と解決 プロセス、設計、デバイス、品質部門との連携 応募資格 技術要件 半導体プロセスに関する基礎知識 プロセスインテグレーションまたは関連するエンジニアリング分野の知識 DRAMデバイスおよび構造に関する知識があれば尚可 半導体エンジニアリング分野における10年以上の経験 コミュニケーションスキル 海外チームとの会議に頻繁に参加するため、英語でのコミュニケーション能力 日常業務に必要な日本語コミュニケーション能力 関係部門との協業や調整を行うための対人コミュニケーション能力 求める人物像 高い分析力および問題解決力を有する方 チーム環境において主体的に業務を遂行できる方 技術課題に対して粘り強く取り組み、責任感を持って対応できる方 &#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61;&#61; ■ Job Responsibilities In this role, you will be responsible for process integration activities for next-generation DRAM technology development. Your key responsibilities will include: Development and integration of process technologies for Future DRAM nodes Design, development, and optimization of capacitor modules Integration across multiple process modules to ensure consistency and performance Design and execution of experiments (DOE) and data analysis to optimize