Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Product Engineer in the High Bandwidth Memory (HBM) Media Health (MH) team, you will work with Fab, Yield Improvement, Design, and other engineering groups passionately focused on HBM. You will develop, deploy, optimize, and innovate test strategies for Micron's DRAM in HBM products. The team acts as a key partner of these engineering groups and specialties, focusing on innovating new and improved test strategies and features. You will guide development for Probe (wafer level test), Burn-in, and ATE test code and testing techniques used to validate and ensure device performance. You will assist in debugging code and aiding other specialists in the characterization of applicable HBM devices. In this role, your additional responsibilities include an in-depth understanding of general device functionality specific to HBM products as well as schematics and signal integrity. Responsibilities: Work with Design Engineering to run simulations pre-silicon to validate DFT circuits and test modes as well as communicate design issues found. Work on pre-silicon tasks with MH and test teams to define required tester resources. Work with Test Engineering and HBM Product Engineering to ensure specific product requirements or limitations are comprehended, leading to silicon performance matching expectations. This work includes test program debug, examination of data, and test development. Support the ID1 fabrication site Process Integration and Yield Enhancement through test development, DOE data analysi
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Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Provide verification support to design projects by simulating, analyzing, and debugging pre-silicon IP designs. Develop Test cases/Stimulus to increase the functional coverage for all DRAM and emerging memory architectures and features. Develop and maintain test benches and test vectors using simulation tools and run regressions for coverage analysis and improvements. Co-work with international colleagues on developing new verification flows to take on the challenges in DRAM and emerging memory design. Participate in developing verification methodology and verification environments for advanced DRAM and emerging memory products. Good understanding of analog / mixed signal circuits. Experience in Analog and Mixed signal Verification , understand the usage of tools like Virtuoso, primesim/ Finseim, Hspice, Xcellium, Simvision, Waveview. Hands on experience in writing Verilog Models. Verilog A/MS, RVM model writing experience is encouraged. Hands on experience in building SPICE testbenches at Block, Fullchip Level. Hands-on experience in building the COSIM/ Mixed signal verification environment is encouraged. Hands on experience in SV, UVM based Verification Hands on experience in SV/PSL assertions. Good scripting skills us
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Product Engineer in the High Bandwidth Memory (HBM) Media Health (MH) team, you will work with Fab, Yield Improvement, Design, and other engineering groups passionately focused on HBM. You will develop, deploy, optimize, and innovate test strategies for Micron's DRAM in HBM products. The team acts as a key partner of these engineering groups and specialties, focusing on innovating new and improved test strategies and features. You will guide development for Probe (wafer level test), Burn-in, and ATE test code and testing techniques used to validate and ensure device performance. You will assist in debugging code and aiding other specialists in the characterization of applicable HBM devices. In this role, your additional responsibilities include an in-depth understanding of general device functionality specific to HBM products as well as schematics and signal integrity. Responsibilities: Work with Design Engineering to run simulations pre-silicon to validate DFT circuits and test modes as well as communicate design issues found. Work on pre-silicon tasks with MH and test teams to define required tester resources. Work with Test Engineering and HBM Product Engineering to ensure specific product requirements or limitations are comprehended, leading to silicon performance matching expectations. This work includes test program debug, examination of data, and test development. Support the fabrication sites and Process Integration through test development to increase effective process feedba
Everpure (NYSE: P) has evolved from storage pioneer to data platform, closing fiscal 2026 with $3.7 billion in revenue, its first billion-dollar quarter, and accelerating growth into FY27. Our strategic agenda spans the companies defining the next era of technology - hyperscalers, AI labs, the AI hardware supply chain, data platform providers, and the broader AI ecosystem. This type of work—work that changes the world—is what the tech industry was founded on. So, if you're ready to seize the endless opportunities and leave your mark, come join us. THE ROLE Drive the technical foundation and supply integrity of Everpure’s enterprise flash arrays, blades, and server building blocks as Component Engineering Manager. You will lead a high-performing engineering team and serve as the final authority on component qualification, ensuring every storage node, CPU, memory subsystem, and interconnect module meets uncompromising performance and reliability standards. By bridging Hardware Engineering, Quality, Supply Chain, and global semiconductor vendors, you will directly influence product architecture while safeguarding manufacturing continuity and operational scale. WHAT YOU'LL DO Engineering Leadership & Talent Development: Build, direct, and mentor a specialized team of component engineers spanning flash/SSD technologies and server platform hardware, fostering technical growth and setting execution priorities. End-to-End Component Qualification: Own the complete qualification lifecycle—defining rigorous test plans, analyzing supplier data, and issuing final approval for design-in and mass production across NAND flash, CPUs, DRAM, power systems, and interconnects. Strategic Flash & SSD Oversight: Drive roadmap alignment and technology node transitions with key storage suppliers, governing media characterization, firmware qualification, and long-term architectural integration. Supply Resilience & Risk Mitigation: Establish multi-sourcing strategies, lead s
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As an Analog Verification Engineer at Micron Technology, Inc., you will help shape advanced analog verification methodologies for next-generation DRAM products. In this role, you will develop scalable verification solutions, improve coverage and efficiency, and contribute to high-quality silicon through innovation, automation , and close collaboration with design teams. Experience with reliability verification methodologies is a strong plus, but not a requirement; candidates with solid analog verification expertise and a willingness to grow in reliability-focused verification are encouraged to apply. Our team vision is a continuing desire to develop your skills working in an inclusive diverse environment of multicultural Teams across worldwide geographies! Enabling the creative career path, you deserve with a collaborative environment and groundbreaking technology and growing upon your imagination and creativity. Responsibilities Define and drive DRAM analog verifi
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Key Responsibilities Establish the program framework for Compute PE's AI initiatives, including timelines, dependencies, risks, and outcomes across concurrent workstreams. Build alignment among Compute PE, Design, Technology Development, DRAM/NAND business units, and partner teams to keep workstreams on track. Track initiative status, identify risks early, and partner with teams to resolve issues across organizational boundaries. Create clear reporting for senior leaders on portfolio health, progress, and key decisions. Partner with Product Development Team Leads (PDTLs) and engineering leaders to incorporate AI requirements into product roadmaps. Identify coordination gaps and implement process improvements to accelerate critical initiatives. Facilitate decision-making forums, track commitments, and maintain a reliable source of information for program status. Apply AI-enabled tools and agentic solutions, such as Code Assist and Cloud Assist, to improve productivity in program workflows, reporting, and analysis. Required Qualifications Candidate must have a Bachelor’s degree in Electrical Engineering, Computer Engineering, Physics, Materials Science, or a related technical field, plus 8+ years in the semiconductor industry with strong understanding of memory/compute product development. Experience leading complex, technical programs, involving multiple teams from definition through execution. Deep familiarity with product
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) within Micron's Technology and Products Group (TPG) leads the development of High Bandwidth Memory (HBM) solutions for AI and ML applications. Our modern designs use Through Silicon Via (TSV) technology. We stack multiple DRAM chips on a high-speed memory controller with a coordinated logic chip in one package. This new way improves memory density and bandwidth through parallelization. It aims to deliver the lowest power per bit solutions in the industry. As a Static Timing Analysis (STA) Engineer — you will be part of the Heterogeneous Integration Group (HIG), owning chip-level timing sign-off for next-generation die. You will work closely with RTL design, physical design, architecture, DFT, verification, and product teams to ensure timing integrity and drive timing closure across all modes and corners from initial design through tape-out. This is a hands-on senior technical role focused on chip-level STA ownership, constraint authoring, timing closure, methodology development, and pre-/post-silicon timing correlation. Key Responsibilities Responsibilities will include, but are not limited to: Own end-to-end chip-level static timing analysis and sign-off across all checks, modes, corners, and voltage and temperature conditions. Develop, maintain, and validate sign-off quality Synopsys Design Constraints (SDC) for clocks, resets, high-bandwidth memory (HBM) interfaces, design for test (DFT), and configuration logic. Drive timing closure at block, sub
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) within Micron's Technology and Products Group (TPG) leads the development of High Bandwidth Memory (HBM) solutions for AI and ML applications. Our modern designs use Through Silicon Via (TSV) technology. We stack multiple DRAM chips on a high-speed memory controller with a coordinated logic chip in one package. This new way improves memory density and bandwidth through parallelization. It aims to deliver the lowest power per bit solutions in the industry. You will join an inclusive, forward-thinking team dedicated to building technologies that power virtual reality, neural networks, and next‑generation computing. In this role, you will own design for test (DFT) solutions for complex high‑bandwidth memory (HBM) system‑on‑chip (SoC) base‑die designs. Your work will directly enable manufacturability, quality, and successful silicon bring‑up across current and future HBM generations. (LLM) Responsibilities will include, but are not limited to: Own SoC-level DFT structures and their implementation. This includes scan, memory built-in self-test (MBIST), logic built-in self-test (LBIST) where applicable, boundary scan (JTAG), and test access architectures for HBM base-die builds. Define and drive DFT architecture early in the design cycle, ensuring alignment with SoC integration, floorplanning, timing, power, and physical design requirements. Implement and integrate DFT logic at block, subsystem, and full‑chip levels while partnering closely with register‑transfer level (RTL) d
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The DRAM Systems & Architecture Lab researches next-generation memory architectures that enable future AI, machine learning, and high-performance computing systems. The team explores innovative memory technologies, system architectures, and hardware-software co-design approaches to improve performance, scalability, and efficiency for emerging AI workloads. As a Research Intern in the DRAM Systems & Architecture Lab, you will conduct research focused on next-generation memory systems for AI accelerators. You will investigate tiered memory architectures, analyze AI workload behavior, develop experimental prototypes, and evaluate architectural innovations across hardware, software, and system-level environments. This role offers the opportunity to contribute to research that may influence future product roadmaps, publications, and advanced memory system designs. Responsibilities Research and evaluate tiered memory architectures designed to improve performance and scalability for AI inference and large language model workloads. Develop experimental methodologies, models, simulations, and prototypes to analyze memory system performance, data movement, and workload behavior. Investigate memory hierarchy optimizations, data placement strategies, cache management, and memory migration mechanisms across AI computing systems. Perform quantitative analysis using hardware platforms, simulation environments, and FPGA-based prototypes to evaluate architectural trade-offs. Document research finding
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Signal Integrity (SI) Research & Development team enables the electrical performance of Micron's industry-leading memory and storage products, including DRAM, LPDRAM, NAND, HBM, SSDs, and emerging memory technologies. The team works across silicon, package, PCB, and system-level designs to develop high-speed signaling and power delivery solutions that support next-generation computing, AI, networking, automotive, mobile, and data center applications. As a Signal Integrity Engineer, you will support the design, analysis, and validation of high-speed memory interfaces and power distribution networks across Micron's product portfolio. Working alongside experienced engineers, you will use modeling, simulation, measurements, and AI-enabled workflows to evaluate signal and power integrity performance, support product development, and contribute to future technology and industry standards initiatives. Responsibilities Support signal integrity and power integrity analysis for high-speed memory interfaces and power distribution networks through modeling, simulation, measurement, and correlation activities. Collaborate with silicon, package, product, validation, and system engineering teams to ensure product electrical performance across all stages of development. Develop and evaluate die, package, PCB, and system-level models to identify performance risks and optimization opportunities. Apply AI-enabled tools and agentic workflows to improve engineering efficiency, automate analysis, improve
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are at the heart of advanced DRAM node development, driving innovations from concept to high-volume production. Our team partners closely across Technology Development, Design, Quality, and Manufacturing to bring innovative memory technologies to life. If you’re excited about translating breakthrough ideas into real-world impact, you’ll find this work both challenging and rewarding. As a High Volume Manufacturing (HVM) Node Development Product Engineer, you will play a central role in introducing new DRAM nodes into production at the ID1 fab. This role connects development to manufacturing—owning yield ramp, cost efficiency, and quality improvements. You’ll collaborate cross-functionally to solve complex problems, improve product performance, and ensure successful technology transfer at scale. Responsibilities: Lead new node startup, qualification, yield ramp, and production readiness Guide development teams on process integration using deep technical insight Analyze yield data and electrical failures to drive measurable improvements Partner with Design, TD, Quality, and Test teams to resolve yield and performance issues Use statistical tools and lab analysis to identify root causes and optimize processes Minimum Qualifications: Bachelor’s degree in Electrical Engineering, Computer Engineering, or related field Familiarity with DRAM architecture, operation, testing, and process integration Understanding of CMOS fundamentals and
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The DRAM Architecture team is responsible for defining the system‑level and silicon‑level architectures that enable Micron’s memory products. The team works across technology generations and product lines, collaborating with design, product, systems, and ecosystem partners to deliver scalable, reliable, and high‑performance memory solutions aligned with customer and market needs. This role provides senior‑level architectural leadership to help shape Micron’s next‑generation DRAM products. As a Distinguished Member of Technical Staff, you will influence memory architecture decisions across semiconductor chips, assembly methods, component units, and system interfaces, contributing to both near‑term product execution and long‑term technology direction. This role requires AI proficiency or AI‑enabled ways of working. Responsibilities: • Define and evolve DRAM system architectures that address performance, capacity scaling, reliability (RAS), and observability requirements. • Collaborate across functions to evaluate architectural trade‑offs spanning DRAM silicon, packaging, modules, boards, and system platforms. • Influence host memory controller and platform architecture through technical engagement with CPU, GPU, and SoC partners. • Contribute to RAS and telemetry feature definition, translating system‑level needs into implementable architectural concepts. • Support exploration of emerging memory technologies and assess their impact on future product roadmaps. • Engage with cus
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Summary The DRAM Packaging organization is responsible for developing and delivering advanced memory packaging solutions that enable Micron’s next generation products. The team partners across design, technology development, manufacturing, quality, supply chain, and external ecosystem partners to drive innovation, accelerate product development, and deliver industry-leading packaging technologies that support markets including AI, cloud, mobile, automotive, high-performance computing, and data centers! Position Overview As the Director of DRAM Packaging, you will lead the strategy, development, and execution of advanced packaging solutions across Micron's memory portfolio. You will define technology roadmaps, drive innovation in next-generation packaging architectures, and build a high-performing global engineering organization. This executive leadership role combines technical expertise, business strategy, customer engagement, and digital transformation to accelerate innovation, improve organizational effectiveness, and strengthen Micron’s competitive position. Responsibilities Define and execute long-term DRAM packaging strategies that support future product, technology, and business objectives Lead development and deployment of advanced packaging technologies, including HBM, LPDRAM, DDR, 2.5D/3D integration, heterogeneous integration, chiplets, and next-generation interconnect solutions Drive adoption of AI, machine learning, advanced analytics, and digital engineering
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) within Micron's Technology and Products Group (TPG) leads the development of High Bandwidth Memory (HBM) solutions for AI and ML applications. Our modern designs use Through Silicon Via (TSV) technology. We stack multiple DRAM chips on a high-speed memory controller with a coordinated logic chip in one package. This new way improves memory density and bandwidth through parallelization. It aims to deliver the lowest power per bit solutions in the industry. You will join an inclusive, forward-thinking team dedicated to building technologies that power virtual reality, neural networks, and next‑generation computing. In this role, you will own design for test (DFT) solutions for complex high‑bandwidth memory (HBM) system‑on‑chip (SoC) base‑die designs. Your work will directly enable manufacturability, quality, and successful silicon bring‑up across current and future HBM generations. (LLM) Responsibilities will include, but are not limited to: Own SoC-level DFT structures and their implementation. This includes scan, memory built-in self-test (MBIST), logic built-in self-test (LBIST) where applicable, boundary scan (JTAG), and test access architectures for HBM base-die builds. Define and drive DFT architecture early in the design cycle, ensuring alignment with SoC integration, floorplanning, timing, power, and physical design requirements. Implement and integrate DFT logic at block, s
Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. The Heterogeneous Integration Group (HIG) within Micron's Technology and Products Group (TPG) leads the development of High Bandwidth Memory (HBM) solutions for AI and ML applications. Our modern designs use Through Silicon Via (TSV) technology. We stack multiple DRAM chips on a high-speed memory controller with a coordinated logic chip in one package. This new way improves memory density and bandwidth through parallelization. It aims to deliver the lowest power per bit solutions in the industry. As a Static Timing Analysis (STA) Engineer — you will be part of the Heterogeneous Integration Group (HIG), owning chip-level timing sign-off for next-generation die. You will work closely with RTL design, physical design, architecture, DFT, verification, and product teams to ensure timing integrity and drive timing closure across all modes and corners from initial design through tape-out. This is a hands-on senior technical role focused on chip-level STA ownership, constraint authoring, timing closure, methodology development, and pre-/post-silicon timing correlation. Key Responsibilities Responsibilities will include, but are not limited to: Own end-to-end chip-level static timing analysis and sign-off across all checks, modes, corners, and voltage and temperature conditions. Develop, maintain, and validate sign-off quality Synopsys Design Constraints (SDC) for clocks, resets, high-bandwidth memory (HBM) interfaces, design for test (DFT), and configuration logic.
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